DE3688489T2 - Einen feldeffekttransistor benutzender fuehler und dessen herstellungsverfahren. - Google Patents

Einen feldeffekttransistor benutzender fuehler und dessen herstellungsverfahren.

Info

Publication number
DE3688489T2
DE3688489T2 DE8686306571T DE3688489T DE3688489T2 DE 3688489 T2 DE3688489 T2 DE 3688489T2 DE 8686306571 T DE8686306571 T DE 8686306571T DE 3688489 T DE3688489 T DE 3688489T DE 3688489 T2 DE3688489 T2 DE 3688489T2
Authority
DE
Germany
Prior art keywords
sensors
production method
field effect
effect transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686306571T
Other languages
English (en)
Other versions
DE3688489D1 (de
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60190776A external-priority patent/JPS6250657A/ja
Priority claimed from JP60190772A external-priority patent/JPS6250656A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE3688489D1 publication Critical patent/DE3688489D1/de
Application granted granted Critical
Publication of DE3688489T2 publication Critical patent/DE3688489T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/939—Langmuir-blodgett film utilization
DE8686306571T 1985-08-29 1986-08-26 Einen feldeffekttransistor benutzender fuehler und dessen herstellungsverfahren. Expired - Fee Related DE3688489T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60190776A JPS6250657A (ja) 1985-08-29 1985-08-29 バイオセンサ−およびその製造方法
JP60190772A JPS6250656A (ja) 1985-08-29 1985-08-29 バイオセンサ−およびその製造方法

Publications (2)

Publication Number Publication Date
DE3688489D1 DE3688489D1 (de) 1993-07-01
DE3688489T2 true DE3688489T2 (de) 1993-09-16

Family

ID=26506302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686306571T Expired - Fee Related DE3688489T2 (de) 1985-08-29 1986-08-26 Einen feldeffekttransistor benutzender fuehler und dessen herstellungsverfahren.

Country Status (3)

Country Link
US (2) US4881109A (de)
EP (1) EP0214805B1 (de)
DE (1) DE3688489T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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US4859538A (en) * 1986-11-20 1989-08-22 Ribi Hans O Novel lipid-protein compositions and articles and methods for their preparation
US5074977A (en) * 1987-05-05 1991-12-24 The Washington Technology Center Digital biosensors and method of using same
WO1988008972A1 (en) * 1987-05-05 1988-11-17 The Washington Technology Center A system employing a biosensor to monitor a characteristic of a select component in a medium
US5225374A (en) * 1988-05-13 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a receptor-based sensor
US5111221A (en) * 1988-05-13 1992-05-05 United States Of America As Represented By The Secretary Of The Navy Receptor-based sensor
IT1224606B (it) * 1988-10-10 1990-10-04 Eniricerche Spa Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
US5156810A (en) * 1989-06-15 1992-10-20 Biocircuits Corporation Biosensors employing electrical, optical and mechanical signals
US5491097A (en) * 1989-06-15 1996-02-13 Biocircuits Corporation Analyte detection with multilayered bioelectronic conductivity sensors
AU9113991A (en) * 1990-11-19 1992-06-11 Biotechnology Research And Development Corporation Mutant orientable proteins and coated substrates
FR2672158B1 (fr) * 1991-01-24 1993-04-09 Commissariat Energie Atomique Capteur pour la detection d'especes chimiques ou de photons utilisant un transistor a effet de champ.
DE19705909A1 (de) * 1996-08-23 1998-08-20 Inst Physikalische Hochtech Ev Neuartige Dünnschichten für die Mikrosystemtechnik und Mikrostrukturierung sowie ihre Verwendung
GB9705278D0 (en) * 1997-03-14 1997-04-30 Aromascan Plc Gas sensor
US7491642B2 (en) * 2000-07-12 2009-02-17 The California Institute Of Technology Electrical passivation of silicon-containing surfaces using organic layers
US20020167003A1 (en) * 2001-04-18 2002-11-14 Campbell Ian H. Chemical and biological sensor using organic self-assembled transitors
AT500669B1 (de) * 2001-09-24 2007-02-15 Oesterr Forsch Seibersdorf Fester träger zur immobilisierung von biomolekülen
DE10155930B4 (de) * 2001-11-14 2020-09-24 Nano Analytik Gmbh Feldeffekttransistor-Sensor
DE10163557B4 (de) * 2001-12-21 2007-12-06 Forschungszentrum Jülich GmbH Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten
US7189987B2 (en) * 2003-04-02 2007-03-13 Lucent Technologies Inc. Electrical detection of selected species
DE10331299A1 (de) * 2003-07-10 2005-02-03 Infineon Technologies Ag Sensor-Transistor-Element, Sensor-Einheit und Sensor-Array
KR101059562B1 (ko) * 2004-02-20 2011-08-26 삼성전자주식회사 민감도가 향상된 바이오 ｆｅｔ
WO2006038324A1 (ja) * 2004-09-30 2006-04-13 Waseda University 半導体センシング用電界効果型トランジスタ、半導体センシングデバイス、半導体センサチップ及び半導体センシング装置
JP4857820B2 (ja) * 2006-03-03 2012-01-18 学校法人早稲田大学 Ｄｎａセンシング方法
US9556471B2 (en) * 2006-08-09 2017-01-31 Flir Detection, Inc. Enzyme containing liquid and delivery system for detection of analytes on surfaces
JP4512607B2 (ja) * 2007-03-22 2010-07-28 信越化学工業株式会社 マイクロアレイ作製用基板の製造方法
US8198658B2 (en) * 2007-06-13 2012-06-12 Samsung Electronics Co., Ltd. Device and method for detecting biomolecules using adsorptive medium and field effect transistor
KR101465961B1 (ko) * 2007-10-09 2014-12-01 삼성전자주식회사 유전자 검출 방법 및 장치
US9188563B2 (en) * 2013-09-26 2015-11-17 Purdue Research Foundation Perforated MOS structure for single biomolecule detection
JP7147953B2 (ja) * 2019-02-25 2022-10-05 株式会社ニコン 半導体装置、ｐＨセンサ及びバイオセンサ並びに半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831432A (en) * 1972-09-05 1974-08-27 Texas Instruments Inc Environment monitoring device and system
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4238757A (en) * 1976-03-19 1980-12-09 General Electric Company Field effect transistor for detection of biological reactions
US4273636A (en) * 1977-05-26 1981-06-16 Kiyoo Shimada Selective chemical sensitive field effect transistor transducers
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
HU186566B (en) * 1982-08-24 1985-08-28 Reanal Finomvegyszergyar Process for immobilisation of combinations consisting nucleofil group
JPS59210356A (ja) * 1983-05-13 1984-11-29 Kuraray Co Ltd トリグリセライドセンサ
GB8314523D0 (en) * 1983-05-25 1983-06-29 Lowe C R Diagnostic device
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
US4683203A (en) * 1984-04-14 1987-07-28 Redco N.V. Immobilized enzymes, processes for preparing same, and use thereof
JPS60247151A (ja) * 1984-05-23 1985-12-06 Fujitsu Ltd Ｆｅｔバイオセンサ

Also Published As

Publication number Publication date
US4881109A (en) 1989-11-14
EP0214805A2 (de) 1987-03-18
EP0214805A3 (en) 1988-07-06
DE3688489D1 (de) 1993-07-01
EP0214805B1 (de) 1993-05-26
US4960722A (en) 1990-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee