DE3673226D1 - Verfahren und vorrichtung zur untersuchung von oberflaechen. - Google Patents

Verfahren und vorrichtung zur untersuchung von oberflaechen.

Info

Publication number
DE3673226D1
DE3673226D1 DE8686104444T DE3673226T DE3673226D1 DE 3673226 D1 DE3673226 D1 DE 3673226D1 DE 8686104444 T DE8686104444 T DE 8686104444T DE 3673226 T DE3673226 T DE 3673226T DE 3673226 D1 DE3673226 D1 DE 3673226D1
Authority
DE
Germany
Prior art keywords
examining surfaces
examining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686104444T
Other languages
English (en)
Inventor
Yuichiro Toshiba Shin Yamazaki
Shonan Heim Miyoshi
Kashima So Ogawa
Rupinasu Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60064896A external-priority patent/JPS61223541A/ja
Priority claimed from JP60277545A external-priority patent/JPH0812061B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3673226D1 publication Critical patent/DE3673226D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
DE8686104444T 1985-03-28 1986-04-01 Verfahren und vorrichtung zur untersuchung von oberflaechen. Expired - Lifetime DE3673226D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60064896A JPS61223541A (ja) 1985-03-28 1985-03-28 表面検査方法および装置
JP60277545A JPH0812061B2 (ja) 1985-12-10 1985-12-10 表面検査装置

Publications (1)

Publication Number Publication Date
DE3673226D1 true DE3673226D1 (de) 1990-09-13

Family

ID=26406026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686104444T Expired - Lifetime DE3673226D1 (de) 1985-03-28 1986-04-01 Verfahren und vorrichtung zur untersuchung von oberflaechen.

Country Status (4)

Country Link
US (1) US4902131A (de)
EP (1) EP0200918B1 (de)
KR (1) KR910000794B1 (de)
DE (1) DE3673226D1 (de)

Families Citing this family (38)

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Publication number Priority date Publication date Assignee Title
JP2680482B2 (ja) * 1990-06-25 1997-11-19 株式会社東芝 半導体基板、半導体基板と半導体装置の製造方法、並びに半導体基板の検査・評価方法
US4740708A (en) * 1987-01-06 1988-04-26 International Business Machines Corporation Semiconductor wafer surface inspection apparatus and method
US4965454A (en) * 1988-01-21 1990-10-23 Hitachi, Ltd. Method and apparatus for detecting foreign particle
US4875780A (en) * 1988-02-25 1989-10-24 Eastman Kodak Company Method and apparatus for inspecting reticles
CH681495A5 (de) * 1990-03-05 1993-03-31 Tet Techno Investment Trust
US5179115A (en) * 1990-06-21 1993-01-12 Imperial Chemical Industries Plc Bicyclic heterocyclic derivatives as 5-lipoxygenase inhibitors
US5267381A (en) * 1991-02-19 1993-12-07 Westinghouse Electric Corp. Automatic tube processing system
US5256886A (en) * 1991-04-30 1993-10-26 E. I. Du Pont De Nemours And Company Apparatus for optically detecting contamination in particles of low optical-loss material
US5189481A (en) * 1991-07-26 1993-02-23 Tencor Instruments Particle detector for rough surfaces
JP3027241B2 (ja) * 1991-07-30 2000-03-27 株式会社堀場製作所 異物検査装置
JP2651815B2 (ja) * 1991-07-30 1997-09-10 株式会社堀場製作所 異物検査装置
JP2523227Y2 (ja) * 1991-07-30 1997-01-22 株式会社堀場製作所 異物検査装置
US5369481A (en) * 1992-05-08 1994-11-29 X-Rite, Incorporated Portable spectrophotometer
JP2800587B2 (ja) * 1992-10-05 1998-09-21 松下電器産業株式会社 異物検査装置および異物検査方法
US5416594A (en) * 1993-07-20 1995-05-16 Tencor Instruments Surface scanner with thin film gauge
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US5712701A (en) * 1995-03-06 1998-01-27 Ade Optical Systems Corporation Surface inspection system and method of inspecting surface of workpiece
US6982794B1 (en) * 1995-06-07 2006-01-03 The Boeing Company Directional reflectometer
US5929981A (en) * 1996-06-18 1999-07-27 Ohmeda Inc. System for monitoring contamination of optical elements in a Raman gas analyzer
US6108078A (en) 1997-11-21 2000-08-22 Kabushiki Kaisha Topcon Method and apparatus for surface inspection
JP4215220B2 (ja) * 1997-11-21 2009-01-28 株式会社トプコン 表面検査方法及び表面検査装置
US6061140A (en) * 1999-05-27 2000-05-09 X-Rite, Incorporated Spectrophotometer with selectable measurement area
US6366352B1 (en) 1999-06-10 2002-04-02 Applied Materials, Inc. Optical inspection method and apparatus utilizing a variable angle design
US6726319B1 (en) * 1999-10-14 2004-04-27 Sumitomo Mitsubishi Silicon Corporation Method for inspecting surface of semiconductor wafer
US7196782B2 (en) * 2000-09-20 2007-03-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thin film characteristic and an electrical property of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6657714B2 (en) * 2001-09-24 2003-12-02 Applied Materials, Inc. Defect detection with enhanced dynamic range
KR100542747B1 (ko) * 2003-08-01 2006-01-11 삼성전자주식회사 결함 검사 방법 및 결함 검사 장치
JP4875936B2 (ja) * 2006-07-07 2012-02-15 株式会社日立ハイテクノロジーズ 異物・欠陥検出方法および異物・欠陥検査装置
EP2156370B1 (de) 2007-05-14 2011-10-12 Historx, Inc. Abteilungsauftrennung durch pixelcharakterisierung unter verwendung von bilddatenclusterung
ES2599902T3 (es) 2007-06-15 2017-02-06 Novartis Ag Sistema y método de microscopio para obtener datos de muestra normalizados
JP4797005B2 (ja) * 2007-09-11 2011-10-19 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
US9240043B2 (en) * 2008-09-16 2016-01-19 Novartis Ag Reproducible quantification of biomarker expression
US9192110B2 (en) 2010-08-11 2015-11-24 The Toro Company Central irrigation control system
KR20130094083A (ko) * 2012-02-15 2013-08-23 삼성전기주식회사 레이저 스캔 장치
GB201312913D0 (en) * 2013-07-18 2013-09-04 Perkinelmer Ltd Sample spinners and spectrometers including sample spinners
JP7071181B2 (ja) * 2018-03-20 2022-05-18 キヤノン株式会社 異物検査装置、成形装置および物品製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD49060B (de) *
BE558271A (de) * 1956-06-13
US3229564A (en) * 1961-05-12 1966-01-18 Bausch & Lomb Reflectometer
US3340400A (en) * 1964-06-11 1967-09-05 Api Instr Company Dual channel flaw detector having phase comparison feedback for automatic balancing
AT351295B (de) * 1977-12-09 1979-07-10 Vianova Kunstharz Ag Anordnung zur messung des glanzvermoegens von oberflaechen, insbesondere organischer ueberzuege
DE2924241A1 (de) * 1979-06-15 1981-01-08 Basf Ag Goniophotometer zur messung des glanzes und/oder des glanzschleiers von oberflaechen
US4360275A (en) * 1980-08-11 1982-11-23 Litton Systems Inc. Device for measurement of optical scattering
US4352017A (en) * 1980-09-22 1982-09-28 Rca Corporation Apparatus for determining the quality of a semiconductor surface

Also Published As

Publication number Publication date
KR860007723A (ko) 1986-10-15
US4902131A (en) 1990-02-20
EP0200918A1 (de) 1986-11-12
EP0200918B1 (de) 1990-08-08
KR910000794B1 (ko) 1991-02-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)