DE3668162D1 - Tiegel aus pyrolytischem bornitrid und verfahren zu seiner herstellung. - Google Patents

Tiegel aus pyrolytischem bornitrid und verfahren zu seiner herstellung.

Info

Publication number
DE3668162D1
DE3668162D1 DE8686107961T DE3668162T DE3668162D1 DE 3668162 D1 DE3668162 D1 DE 3668162D1 DE 8686107961 T DE8686107961 T DE 8686107961T DE 3668162 T DE3668162 T DE 3668162T DE 3668162 D1 DE3668162 D1 DE 3668162D1
Authority
DE
Germany
Prior art keywords
bornitride
pyrolytic
pot
production
pyrolytic bornitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686107961T
Other languages
English (en)
Inventor
Hiroaki Denki Kagaku Kog Tanji
Masaharu Denki Kagaku K Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12523085A external-priority patent/JPS61285382A/ja
Priority claimed from JP12523185A external-priority patent/JPS61285383A/ja
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Application granted granted Critical
Publication of DE3668162D1 publication Critical patent/DE3668162D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8686107961T 1985-06-11 1986-06-11 Tiegel aus pyrolytischem bornitrid und verfahren zu seiner herstellung. Expired - Fee Related DE3668162D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12523085A JPS61285382A (ja) 1985-06-11 1985-06-11 窒化ホウ素るつぼ及びその製法
JP12523185A JPS61285383A (ja) 1985-06-11 1985-06-11 窒化ホウ素るつぼ及びその製法

Publications (1)

Publication Number Publication Date
DE3668162D1 true DE3668162D1 (de) 1990-02-15

Family

ID=26461718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686107961T Expired - Fee Related DE3668162D1 (de) 1985-06-11 1986-06-11 Tiegel aus pyrolytischem bornitrid und verfahren zu seiner herstellung.

Country Status (3)

Country Link
US (2) US4773852A (de)
EP (1) EP0206120B1 (de)
DE (1) DE3668162D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977103A (en) * 1989-08-24 1990-12-11 At&T Bell Laboratories Method of making an article comprising a III/V semiconductor device
US5158750A (en) * 1990-06-06 1992-10-27 Praxair S.T. Technology, Inc. Boron nitride crucible
DE69230962T2 (de) * 1991-08-22 2000-10-05 Raytheon Co., Lexington Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel
DE69315261T2 (de) * 1992-06-18 1998-03-12 Sumitomo Electric Industries Verfahren und Vorrichtung zur Herstellung von Siliciumnitridkeramik
US5495550A (en) * 1994-09-28 1996-02-27 Advanced Ceramics Corporation Graphite flash evaporator having at least one intermediate layer and a pyrolytic boron nitride coating
US5671322A (en) * 1996-01-17 1997-09-23 Advanced Ceramics Corporation Lateral flash evaporator
JP3724870B2 (ja) * 1996-02-15 2005-12-07 信越化学工業株式会社 熱分解窒化ホウ素ルツボ
JP3758755B2 (ja) * 1996-08-13 2006-03-22 信越化学工業株式会社 熱分解窒化ホウ素容器およびその製造方法
US5970383A (en) * 1997-12-17 1999-10-19 Advanced Micro Devices Method of manufacturing a semiconductor device with improved control of deposition layer thickness
JP3881490B2 (ja) 2000-02-17 2007-02-14 信越化学工業株式会社 熱分解窒化ホウ素製二重容器およびその製造方法
US6670025B2 (en) * 2001-05-24 2003-12-30 General Electric Company Pyrolytic boron nitride crucible and method
JP2011225949A (ja) * 2010-04-21 2011-11-10 Ibiden Co Ltd 炭素部品および炭素部品の製造方法
US20120304762A1 (en) * 2011-06-03 2012-12-06 Xu Caixuan Method for making a pyrolytic boron nitride article
DE102015108845A1 (de) * 2015-06-03 2016-12-08 Endress + Hauser Gmbh + Co. Kg Beschichtung für ein Messgerät der Prozesstechnik
US9640514B1 (en) 2016-03-29 2017-05-02 Globalfoundries Inc. Wafer bonding using boron and nitrogen based bonding stack
CN108411280A (zh) * 2018-04-04 2018-08-17 博宇（天津）半导体材料有限公司 一种多层坩埚及其制造方法
CN111703698B (zh) * 2020-06-28 2021-12-21 株洲铼因材料技术有限公司 装料容器及其制备方法以及使用其制备高纯铼的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US559868A (en) * 1896-05-12 scoville
US2291083A (en) * 1942-07-28 Furnace construction
US1803135A (en) * 1928-11-22 1931-04-28 Alexander D Ross Welding apparatus
US1996660A (en) * 1933-02-28 1935-04-02 Stanworth Stephen Gas fired furnace
US2721364A (en) * 1951-10-12 1955-10-25 Anaconda Co Melting and casting apparatus
US2947114A (en) * 1957-05-09 1960-08-02 Engelhard Ind Inc Composite material
GB934167A (en) * 1961-04-21 1963-08-14 Kanthal Ab Improvements in or relating to crucible furnaces
US3148238A (en) * 1961-08-21 1964-09-08 Harbison Walker Refractories Oxygen converter linings
US3491992A (en) * 1964-10-06 1970-01-27 Leybold Heraeus Gmbh & Co Kg Vaporizing crucible
US3345059A (en) * 1965-03-12 1967-10-03 United States Steel Corp Crucible for holding molten metal
US3328017A (en) * 1965-05-25 1967-06-27 William V Conner Reaction vessel for production of plutonium
US3734480A (en) * 1972-02-08 1973-05-22 Us Navy Lamellar crucible for induction melting titanium
US3779699A (en) * 1973-03-15 1973-12-18 Aluminum Co Of America Furnace structure
DE2446407C2 (de) * 1974-09-28 1982-12-16 Didier-Werke Ag, 6200 Wiesbaden Winderhitzer für Hochöfen
GB1468642A (en) * 1975-01-07 1977-03-30 Burroughs Corp Data processing systems
US4058579A (en) * 1975-02-27 1977-11-15 Union Carbide Corporation Process for producing an improved boron nitride crucible
US3986822A (en) * 1975-02-27 1976-10-19 Union Carbide Corporation Boron nitride crucible
CH613129A5 (de) * 1975-06-11 1979-09-14 Prolizenz Ag
DE2928089C3 (de) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung

Also Published As

Publication number Publication date
US4773852A (en) 1988-09-27
EP0206120B1 (de) 1990-01-10
EP0206120A1 (de) 1986-12-30
US4913652A (en) 1990-04-03

Similar Documents

Publication Publication Date Title
DE3784612D1 (de) Thermistor und verfahren zu seiner herstellung.
DE3688093D1 (de) Durchsichtiger gegenstand und verfahren zu seiner herstellung.
DE3581563D1 (de) Polysiloxanpfropfcopolymer und verfahren zu dessen herstellung.
DE3667779D1 (de) Glasspinnfaden und verfahren zu seiner herstellung.
DE3583757D1 (de) Keramisches material und verfahren zu seiner herstellung.
DE3686976D1 (de) Bipolares halbleiterbauelement und verfahren zu seiner herstellung.
DE3785806D1 (de) Zaehes hartmetall und verfahren zu seiner herstellung.
DE3482814D1 (de) Behaelter und verfahren zu seiner herstellung.
DE3580206D1 (de) Bipolarer transistor und verfahren zu seiner herstellung.
DE3777931D1 (de) Titandioxydsol und verfahren zur seiner herstellung.
DE3877256D1 (de) Beschichteter gegenstand und verfahren zu seiner herstellung.
DE3867724D1 (de) Modifiziertes feinpulveriges polytetrafluoraethylen und verfahren zu seiner herstellung.
DE3865616D1 (de) Poroeser kohlenstoff-kohlenstoff-verbundwerkstoff und verfahren zu seiner herstellung.
DE3866262D1 (de) Aufzeichnungstraeger und verfahren zu seiner herstellung.
DE3681938D1 (de) Halbleitersensor und verfahren zu seiner herstellung.
DE3671650D1 (de) Gemustertes gewebe und verfahren zu seiner herstellung.
DE3579367D1 (de) Halbleiterphotodetektor und verfahren zu seiner herstellung.
DE3684654D1 (de) Elektrochemisches element und verfahren zu seiner herstellung.
DE3683602D1 (de) Haustierfutter und haustierfutterbestandteil und verfahren zu seiner herstellung.
DE3668162D1 (de) Tiegel aus pyrolytischem bornitrid und verfahren zu seiner herstellung.
DE3867578D1 (de) Poroeser kohlenstoff-kohlenstoff-verbundwerkstoff und verfahren zu seiner herstellung.
DE3679568D1 (de) Beschichtetes sinterkarbid und verfahren zu seiner herstellung.
DE3668430D1 (de) Verbundkoerper und verfahren zu seiner herstellung.
DE3676655D1 (de) Verbundwerkstoff und verfahren zu seiner herstellung.
DE3850632D1 (de) Supraleiterelement und Verfahren zu seiner Herstellung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee