DE3668098D1 - Leistungshalbleiterbauteil und damit verbundene steuerlogik. - Google Patents

Leistungshalbleiterbauteil und damit verbundene steuerlogik.

Info

Publication number
DE3668098D1
DE3668098D1 DE8686402033T DE3668098T DE3668098D1 DE 3668098 D1 DE3668098 D1 DE 3668098D1 DE 8686402033 T DE8686402033 T DE 8686402033T DE 3668098 T DE3668098 T DE 3668098T DE 3668098 D1 DE3668098 D1 DE 3668098D1
Authority
DE
Germany
Prior art keywords
control logic
semiconductor component
related control
performance semiconductor
performance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686402033T
Other languages
English (en)
Inventor
Joseph Thomson-Csf Scpi Borel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE3668098D1 publication Critical patent/DE3668098D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8686402033T 1985-09-24 1986-09-17 Leistungshalbleiterbauteil und damit verbundene steuerlogik. Expired - Fee Related DE3668098D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8514137A FR2587841B1 (fr) 1985-09-24 1985-09-24 Composant semi-conducteur de puissance et logique de commande associee

Publications (1)

Publication Number Publication Date
DE3668098D1 true DE3668098D1 (de) 1990-02-08

Family

ID=9323194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686402033T Expired - Fee Related DE3668098D1 (de) 1985-09-24 1986-09-17 Leistungshalbleiterbauteil und damit verbundene steuerlogik.

Country Status (4)

Country Link
EP (1) EP0220974B1 (de)
JP (1) JP2689378B2 (de)
DE (1) DE3668098D1 (de)
FR (1) FR2587841B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721139A1 (fr) * 1994-06-10 1995-12-15 Motorola Semiconducteurs Structure de circuit intégré à semiconducteur et son procédé de fabrication.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55147757U (de) * 1979-04-09 1980-10-23
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
JPS57141962A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Semiconductor integrated circuit device
JPS5894218A (ja) * 1981-11-30 1983-06-04 Semiconductor Res Found フオトカツプラ
JPS60100469A (ja) * 1983-11-05 1985-06-04 Nissan Motor Co Ltd 半導体装置
JPS60167373A (ja) * 1984-02-09 1985-08-30 Matsushita Electronics Corp 絶縁ゲ−ト電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
FR2587841A1 (fr) 1987-03-27
EP0220974A1 (de) 1987-05-06
JPS6273773A (ja) 1987-04-04
FR2587841B1 (fr) 1988-09-16
EP0220974B1 (de) 1990-01-03
JP2689378B2 (ja) 1997-12-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee