DE3625543C2 - - Google Patents

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Publication number
DE3625543C2
DE3625543C2 DE3625543A DE3625543A DE3625543C2 DE 3625543 C2 DE3625543 C2 DE 3625543C2 DE 3625543 A DE3625543 A DE 3625543A DE 3625543 A DE3625543 A DE 3625543A DE 3625543 C2 DE3625543 C2 DE 3625543C2
Authority
DE
Germany
Prior art keywords
metal
outer coating
phosphorus
alloy
material according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3625543A
Other languages
English (en)
Other versions
DE3625543A1 (de
Inventor
Heinz Georg Moedling At Hiesboeck
Karl Wien At Bartl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Karl Neumayer Erzeugung und Vertrieb Von Kabeln Draehten Isolierten Leitungen und Elektromaterial Guenselsdorf At GmbH
Original Assignee
Karl Neumayer Erzeugung und Vertrieb Von Kabeln Draehten Isolierten Leitungen und Elektromaterial Guenselsdorf At GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Karl Neumayer Erzeugung und Vertrieb Von Kabeln Draehten Isolierten Leitungen und Elektromaterial Guenselsdorf At GmbH filed Critical Karl Neumayer Erzeugung und Vertrieb Von Kabeln Draehten Isolierten Leitungen und Elektromaterial Guenselsdorf At GmbH
Publication of DE3625543A1 publication Critical patent/DE3625543A1/de
Application granted granted Critical
Publication of DE3625543C2 publication Critical patent/DE3625543C2/de
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Insulated Conductors (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)
  • Conductive Materials (AREA)

Description

Die Erfindung betrifft ein band- bzw. drahtförmiges Material aus Phosphor enthaltendem Material oder einer Phosphor enthaltenden Metall-Legierung, mit einer aus einer Blei-Legierung bestehenden Außenbeschichtung.
Materialien dieser Art kommen bevorzugt in der Elektro- und Elektronikindustrie zum Einsatz, wo es insbesondere auf deren Lötfähigkeit und Korrosionsbeständigkeit ankommt. Es hat sich nun gezeigt, daß Materialien dieser Art in dem Sinne altern, daß sie im Laufe der Zeit ihre Benetzungs­ fähigkeit und somit also ihre Lötfähigkeit gegenüber flüs­ sigen Zinn-Blei-Legierungen bzw. gegenüber Zinn verlieren. Von besonderem Nachteil bei diesen Materialien ist, daß dieser Alterungsprozeß, also das Verlieren der Lötfähig­ keit, relativ rasch eintritt, wobei hierfür Zeiträume von 5 bis 12 Wochen üblich sind.
Der Erfindung liegt die Aufgabe zugrunde, diese Nachteile zu beseitigen und ein band- bzw. drahtförmiges Material zu schaffen, bei welchem der Alterungsprozeß hinsichtlich des Verlierens der Lötfähigkeit wesentlich langsamer abläuft, d. h. jedenfalls so langsam, daß es eine Lötfähigkeit in den üblichen Zeiträumen von bis zu einem Jahr von Produk­ tion und Verarbeitung beibehält.
Diese Aufgabe wird nach der Erfindung dadurch gelöst, daß der Phosphorgehalt des Metalls bzw. der Metall-Legierung zwischen 0,13 und 0,03% liegt, wobei bleibeschichtete Stahlbleche ausgenommen sind. Besonders vorteilhaft ist dabei, wenn der Phosphorgehalt des Metalls bzw. der Me­ tall-Legierung zwischen 0,05 und 0,06% liegt.
Das Material kann aus allen üblichen in der Elektro- und Elektronikindustrie zum Einsatz kommenden Metallen beste­ hen. In einer bevorzugten Ausführungsform der Erfindung ist vorgesehen, daß das Material aus Phosphor-Bronze und die Außenbeschichtung aus einer Zinn-Blei-Legierung besteht. Eine weitere bevorzugte Ausführungsform ist dadurch ge­ kennzeichnet, daß das Material aus desoxydiertem Kupfer und die Außenbeschichtung aus einer Zinn-Blei-Legierung besteht.
Bei den bisher bekannten band- bzw. drahtförmigen Materia­ lien, insbesondere für Lötzwecke, waren wesentlich höhere Phosphoranteile vorliegend, und es ist das Verdienst der Erfindung, erkannt zu haben, daß die Materialien zufolge dieses hohen Phosphorgehaltes so rasch ihre Lötfähigkeit verlieren. Bisher war man vielmehr nach Theorie und Praxis der Auffassung, daß die Ursachen dieses Verlierens der Lötfähigkeit zurückgeht auf die Diffusion des Kupfers aus dem Grundmaterial in die aus einer Zinn-Blei-Legierung be­ stehenden Außenbeschichtung sowie umgekehrt auf die Diffu­ sion des Zinns aus der Außenbeschichtung in das Grundmate­ rial aus Metall bzw. einer Metall-Legierung. Es ist also das Verdienst der Erfindung, erkannt zu haben, daß es die Diffusion des Phosphors aus dem Grundmaterial in die blei­ haltige metallische Außenbeschichtung ist, welche die ra­ sche Verschlechterung der Lötfähigkeit verursacht.
Gemäß einer bevorzugten Ausführungsform der Erfindung kann diese Diffusion des Phosphors in die Außenbeschichtung noch weiter dadurch herabgesetzt werden, daß zwischen dem Metall bzw. der Metall-Legierung und der Außenbeschichtung eine metallische Sperrschicht angeordnet ist. Diese kann aus Nickel oder vorzugsweise aus Kupfer bestehen und eine Dicke von zumindestens 0,002 mm aufweisen.
Bei einem bekannten Material, das aus einer Phosphor-Bronze mit 5 Gew.-% Zinn, 94,7 Gew.-% Kupfer und 0,3 Gew.-% Phosphor besteht und eine Außenbeschichtung aus einer Zinn-Blei-Le­ gierung, wie z. B. 5% Blei und 95% Zinn, aufweist beträgt die Lagerzeit, während welcher die Lötfähigkeit nicht verloren geht etwa zwei bis fünf Monate. Diese Werte der Lagerzeit sind jedoch auch stark unterschiedlich, weil der Phosphor in der Phosphor-Bronze stark diskontinuierlich verteilt ist, so daß ohne weiteres Chargen vorliegen können, bei welchen diese Lagerzeit wesentlich kürzer ist als bei anderen Chargen.
Setzt man gemäß der Erfindung den Anteil von Phosphor auf höchstens 0,13 Gew.-% fest, bei sonst gleichbleibenden Zu­ sammensetzungen und Gew.Anteilen (entsprechend der Erhöhung des Kupferanteiles bzw. Zinnanteiles zufolge niedrigeren Phosphorgehaltes), so ergeben sich Lagerzeiten von zumindestens zwei Jahren, während welcher die Lötfähigkeit nicht verloren geht. Darüber hinaus konnte aber auch festgestellt werden, daß die bei den bekannten Materialien mit hohem Phosphoranteil auf­ tretenden Schwankungen der Lötfähigkeit als Funktion der Lagerzeit vermieden werden konnten.
Als besonders vorteilhaft haben sich Phosphorgehalte im Be­ reich zwischen 0,05 und 0,06 Gew.-% herausgestellt.
Um eine Diffusion des in dem Metall bzw. der Metall- Legierung enthaltenden Phosphors in die bleihaltige Außenbe­ schichtung weiter herabzusetzen, kann eine Sperrschicht zwischen der Außenbeschichtung und dem Metall bzw. der Metall-Legierung vorgesehen werden. Bei einer aus Kupfer bestehenden Sperr­ schicht einer Dicke von 0,002 mm konnte bei der oben be­ schriebenen erfindungsgemäßen Zusammensetzung des Materials eine weitere Erhöhung der Lagerzeit erreicht werden.
Ferner wurde beobachtet, daß bei erfindungsgemäßen Materialien die Langzeithaftfestigkeit der aus einer Zinn-Blei-Legierung bestehenden Beschichtung an dem phosphorhaltigen Metall bzw. Metall-Legierung wesentlich erhöht ist. Tordiert man zum Bei­ spiel die bekannten Materialien mit hohem Phosphorgehalt nach einer Lagerzeit von fünf Monaten bis ein Jahr, so stellt man fest, daß sich die Außenbeschichtung bereichweise ablöst, was bei den erfindungsgemäßen Materialien nicht der Fall ist.

Claims (7)

1. Band- bzw. drahtförmiges Material aus Phosphor enthaltendem Metall oder einer Phosphor enthaltenden Metall-Legierung, mit einer aus einer Blei-Legierung bestehenden Außenbeschichtung, dadurch gekennzeichnet, daß der Phosphorgehalt des Metalls bzw. der Metall-Legierung zwischen 0,13 und 0,03% liegt, wobei bleibeschichtete Stahlbleche ausgenommen sind.
2. Material nach Anspruch 1, dadurch gekennzeichnet, daß der Phosphorgehalt des Metalls bzw. der Metall-Legierung zwischen 0,05 und 0,06% liegt.
3. Material nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es aus Phosphor-Bronze und die Außenbeschichtung aus einer Zinn-Blei-Legierung besteht.
4. Material nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß es aus desoxydiertem Kupfer und die Außenbeschichtung aus einer Zinn-Blei-Legierung besteht.
5. Material nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß zwischen dem Metall bzw. der Metall-Legierung und der Außenbeschichtung eine metallische Sperrschicht angeordnet ist.
6. Material nach Anspruch 5, dadurch gekennzeichnet, daß die metallische Sperrschicht aus Nickel oder Kupfer besteht.
7. Material nach Anspruch 5 oder 6, dadurch gekennzeichnet, daß die Sperrschicht eine Dicke von mindestens 0,002 mm aufweist.
DE19863625543 1985-12-13 1986-07-29 Band- bzw. drahtfoermiges material Granted DE3625543A1 (de)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700089A1 (de) * 1986-04-16 1987-10-22 Neumayer Karl Band- bzw. drahtfoermiges material

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
AT385932B (de) * 1985-12-13 1988-06-10 Neumayer Karl Band- bzw. drahtfoermiges material
US7200930B2 (en) 1994-11-15 2007-04-10 Formfactor, Inc. Probe for semiconductor devices
US7084656B1 (en) 1993-11-16 2006-08-01 Formfactor, Inc. Probe for semiconductor devices
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
WO1996037931A1 (en) * 1995-05-26 1996-11-28 Formfactor, Inc. Spring element electrical contact and methods
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
US5994152A (en) 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
US20050268991A1 (en) * 2004-06-03 2005-12-08 Enthone Inc. Corrosion resistance enhancement of tin surfaces
WO2009123157A1 (ja) * 2008-03-31 2009-10-08 古河電気工業株式会社 接続部品用金属材料およびその製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1509102A (en) * 1920-01-26 1924-09-23 Kerite Insulated Wire And Cabl Electrical conductor
US2079483A (en) * 1935-04-17 1937-05-04 Revere Copper & Brass Inc Welding rod
US2079484A (en) * 1935-07-16 1937-05-04 Revere Copper & Brass Inc Welding rod and the like
US2079480A (en) * 1935-09-23 1937-05-04 Revere Copper & Brass Inc Welding rod and the like
US2079482A (en) * 1935-09-23 1937-05-04 Revere Copper & Brass Inc Welding rod and the like
US2079479A (en) * 1935-09-23 1937-05-04 Revere Copper & Brass Inc Welding rod and the like
US2079481A (en) * 1935-10-26 1937-05-04 Revere Copper & Brass Inc Leaded phosphor-bronze welding rod
US2718494A (en) * 1952-04-03 1955-09-20 Charles L Faust Metallic coating for wire
US2897584A (en) * 1957-05-22 1959-08-04 Sel Rex Corp Gold plated electrical contact and similar elements
GB1117684A (en) * 1966-02-23 1968-06-19 Vandervell Products Ltd Improvements in or relating to composite metal bearing strips
US3522038A (en) * 1967-06-26 1970-07-28 Olin Corp Copper base alloy
GB1382202A (en) * 1971-03-03 1975-01-29 Olin Corp Cuprous composite article
US3676088A (en) * 1971-03-03 1972-07-11 Olin Corp Composite article
US3915546A (en) * 1971-06-15 1975-10-28 Amp Inc Selectively applied flowable solder apparatus, product and method of fabrication
US3864014A (en) * 1972-05-01 1975-02-04 Amp Inc Coined post for solder stripe
US3821692A (en) * 1972-10-19 1974-06-28 Bell Telephone Labor Inc Slotted electrical connector of copperbased alloy separated from an indium coating by a barrier layer
US3875027A (en) * 1973-06-29 1975-04-01 Bundy Corp Method of electroplating tubing prior to terne alloy coating
US3923558A (en) * 1974-02-25 1975-12-02 Olin Corp Copper base alloy
JPS5535238B2 (de) * 1975-01-24 1980-09-12
JPS6047344B2 (ja) * 1977-07-21 1985-10-21 住友電気工業株式会社 溶融めつき極細銅合金導体
JPS5474248A (en) * 1977-11-24 1979-06-14 Hitachi Cable Ltd Clad solder
US4233067A (en) * 1978-01-19 1980-11-11 Sumitomo Electric Industries, Ltd. Soft copper alloy conductors
JPS55151710A (en) * 1979-05-17 1980-11-26 Nippon Fuiraametaruzu Kk Method of preventing disconnection of extremely fine copper wire and disconnection preventive agent
FR2472252A1 (fr) * 1979-12-18 1981-06-26 Thomson Brandt Cable electrique multifilaire isole, a conducteurs proteges, soudables et non thermo collants
FR2482791A1 (fr) * 1980-05-13 1981-11-20 Ctm Perfectionnements aux contacts de connecteurs
US4357069A (en) * 1981-02-04 1982-11-02 Western Electric Company, Inc. Solder-bearing lead having solder-confining stop means
US4441118A (en) * 1983-01-13 1984-04-03 Olin Corporation Composite copper nickel alloys with improved solderability shelf life
JPS6017038A (ja) * 1983-07-06 1985-01-28 Mitsubishi Electric Corp ワイヤカツト放電加工用ワイヤ電極
JPS6039139A (ja) * 1983-08-12 1985-02-28 Mitsui Mining & Smelting Co Ltd 耐軟化高伝導性銅合金
DE3335716A1 (de) * 1983-10-01 1985-05-02 Glyco-Metall-Werke Daelen & Loos Gmbh, 6200 Wiesbaden Gleitlager und verfahren zu seiner herstellung
JPS60177991A (ja) * 1984-02-24 1985-09-11 Hitachi Cable Ltd インレイクラツド材およびその製造方法
AT385932B (de) * 1985-12-13 1988-06-10 Neumayer Karl Band- bzw. drahtfoermiges material
JPS62227051A (ja) * 1986-03-28 1987-10-06 Mitsubishi Shindo Kk Ｃｕ合金製電気機器用コネクタ
AT386147B (de) * 1986-04-16 1988-07-11 Neumayer Karl Verfahren zur herstellung von band- bzw. drahtfoermigem material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700089A1 (de) * 1986-04-16 1987-10-22 Neumayer Karl Band- bzw. drahtfoermiges material

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DE3625543A1 (de) 1987-06-19
GB2185704B (en) 1989-05-10
FR2591518A1 (fr) 1987-06-19
GB2185704A (en) 1987-07-29
ATA361085A (de) 1987-11-15
AT385932B (de) 1988-06-10
FR2591518B1 (fr) 1994-01-28
GB8618404D0 (en) 1986-09-03
US5045410A (en) 1991-09-03

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