DE3618128C2 - - Google Patents
Info
- Publication number
- DE3618128C2 DE3618128C2 DE3618128A DE3618128A DE3618128C2 DE 3618128 C2 DE3618128 C2 DE 3618128C2 DE 3618128 A DE3618128 A DE 3618128A DE 3618128 A DE3618128 A DE 3618128A DE 3618128 C2 DE3618128 C2 DE 3618128C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- capacitor
- insulation layer
- groove
- capacitor insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 75
- 229910052710 silicon Inorganic materials 0.000 claims description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 53
- 230000003647 oxidation Effects 0.000 claims description 52
- 238000007254 oxidation reaction Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 49
- 239000012298 atmosphere Substances 0.000 claims description 43
- 238000009413 insulation Methods 0.000 claims description 31
- 230000001590 oxidative effect Effects 0.000 claims description 24
- 239000011737 fluorine Substances 0.000 claims description 21
- 229910052731 fluorine Inorganic materials 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000460 chlorine Substances 0.000 claims description 15
- 229910052801 chlorine Inorganic materials 0.000 claims description 15
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 229910008284 Si—F Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 which contains steam Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60116384A JPS61276226A (ja) | 1985-05-31 | 1985-05-31 | 半導体装置の製造方法 |
| JP60118101A JPH0618248B2 (ja) | 1985-05-31 | 1985-05-31 | 半導体装置の製造方法 |
| JP61003104A JPS62160731A (ja) | 1986-01-10 | 1986-01-10 | 半導体装置の製造方法 |
| JP61008959A JP2602808B2 (ja) | 1986-01-21 | 1986-01-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3618128A1 DE3618128A1 (de) | 1986-12-04 |
| DE3618128C2 true DE3618128C2 (enExample) | 1992-07-02 |
Family
ID=27453783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863618128 Granted DE3618128A1 (de) | 1985-05-31 | 1986-05-30 | Verfahren zur herstellung eines mos-kondensators |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4735824A (enExample) |
| KR (1) | KR900000064B1 (enExample) |
| DE (1) | DE3618128A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258332A (en) * | 1987-08-28 | 1993-11-02 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices including rounding of corner portions by etching |
| KR940003218B1 (ko) * | 1988-03-24 | 1994-04-16 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
| US5629531A (en) * | 1992-06-05 | 1997-05-13 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
| JP3396553B2 (ja) * | 1994-02-04 | 2003-04-14 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
| EP0675529A3 (en) * | 1994-03-30 | 1998-06-03 | Denso Corporation | Process for manufacturing vertical MOS transistors |
| US5780324A (en) * | 1994-03-30 | 1998-07-14 | Denso Corporation | Method of manufacturing a vertical semiconductor device |
| US5470770A (en) * | 1994-03-31 | 1995-11-28 | Nippondenso Co., Ltd. | Manufacturing method of semiconductor device |
| US6478263B1 (en) | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP3645379B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5985740A (en) | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
| JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
| JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| US7056381B1 (en) | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
| US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
| US6465287B1 (en) | 1996-01-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization |
| US6063654A (en) * | 1996-02-20 | 2000-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor involving laser treatment |
| US6100562A (en) | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| KR19990003490A (ko) * | 1997-06-25 | 1999-01-15 | 김영환 | 반도체 소자의 산화막 형성방법 |
| JP3917327B2 (ja) * | 1999-06-01 | 2007-05-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び装置 |
| US6150234A (en) * | 1999-12-16 | 2000-11-21 | Vlsi Technology, Inc. | Trench-diffusion corner rounding in a shallow-trench (STI) process |
| JP2003179148A (ja) * | 2001-10-04 | 2003-06-27 | Denso Corp | 半導体基板およびその製造方法 |
| TW200409230A (en) * | 2002-11-28 | 2004-06-01 | Au Optronics Corp | Method for avoiding non-uniform etching of silicon layer |
| US8859389B2 (en) * | 2011-01-28 | 2014-10-14 | Kabushiki Kaisha Toshiba | Methods of making fins and fin field effect transistors (FinFETs) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947299A (en) * | 1971-05-22 | 1976-03-30 | U.S. Philips Corporation | Method of manufacturing semiconductor devices |
| US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
| DE2967538D1 (en) * | 1978-06-14 | 1985-12-05 | Fujitsu Ltd | Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride |
| US4234362A (en) * | 1978-11-03 | 1980-11-18 | International Business Machines Corporation | Method for forming an insulator between layers of conductive material |
| JPS5583268A (en) * | 1978-12-19 | 1980-06-23 | Nec Corp | Complementary mos semiconductor device and method of fabricating the same |
| KR920010461B1 (ko) * | 1983-09-28 | 1992-11-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 메모리와 그 제조 방법 |
| JPS60111436A (ja) * | 1983-11-22 | 1985-06-17 | Toshiba Corp | 半導体装置の製造方法 |
| JPH073858B2 (ja) * | 1984-04-11 | 1995-01-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS60223153A (ja) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｉｓ型キャパシタを有する半導体装置の製法 |
-
1986
- 1986-05-23 US US06/866,310 patent/US4735824A/en not_active Expired - Lifetime
- 1986-05-29 KR KR1019860004247A patent/KR900000064B1/ko not_active Expired
- 1986-05-30 DE DE19863618128 patent/DE3618128A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3618128A1 (de) | 1986-12-04 |
| KR860009494A (ko) | 1986-12-23 |
| KR900000064B1 (ko) | 1990-01-19 |
| US4735824A (en) | 1988-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3618128C2 (enExample) | ||
| EP1145279B1 (de) | Halbleiterbauelement mit einer wolframoxidschicht und verfahren zu dessen herstellung | |
| DE10101568B4 (de) | Halbleitervorrichtung und Verfahren zur Herstellung derselben | |
| DE3841588C2 (enExample) | ||
| DE69031849T2 (de) | Verfahren zum Ebnen von Topologien für integrierte Schaltungen | |
| DE4433086C2 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| EP0000897B1 (de) | Verfahren zum Herstellen von lateral isolierten Siliciumbereichen | |
| DE69231655T2 (de) | Verfahren zur Herstellung einer Graberstruktur in einem Halbleitersubstrat | |
| DE69232131T2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer isolierenden Schicht für einen Kondensator | |
| DE4208537C2 (de) | MOS-FET-Struktur und Verfahren zu deren Herstellung | |
| DE2628407A1 (de) | Verfahren zum herstellen von vergrabenen dielektrischen isolierungen | |
| DE2933849A1 (de) | Verfahren zur herstellung von halbleiteranordnungen | |
| DE3530773A1 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung | |
| DE2641752A1 (de) | Verfahren zur herstellung eines feldeffekttransistors | |
| DE19636054A1 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| DE68916120T2 (de) | Verfahren zur Herstellung einer integrierten Speicher-Zelle. | |
| DE3540422A1 (de) | Verfahren zum herstellen integrierter strukturen mit nicht-fluechtigen speicherzellen, die selbst-ausgerichtete siliciumschichten und dazugehoerige transistoren aufweisen | |
| DE19712540C1 (de) | Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall | |
| DE4215010C2 (de) | Halbleitereinrichtung und Verfahren zu deren Herstellung | |
| DE19907062A1 (de) | Verfahren zur Herstellung eines DRAM-Zellenkondensators | |
| DE4120592A1 (de) | Halbleitereinrichtung und verfahren zu deren herstellung | |
| DE3411960C2 (enExample) | ||
| DE19805692A1 (de) | Halbleitereinrichtung und Verfahren zur Herstellung derselben | |
| DE69020819T2 (de) | Verfahren zum Herstellen eines Mesa-MOS-Transistors des Typs SOI. | |
| DE19823742B4 (de) | Verfahren zum Bilden eines Isolationsbereichs in einem Halbleitersubstrat |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) |