DE3609691A1 - Thermischer schreibkopf - Google Patents
Thermischer schreibkopfInfo
- Publication number
- DE3609691A1 DE3609691A1 DE19863609691 DE3609691A DE3609691A1 DE 3609691 A1 DE3609691 A1 DE 3609691A1 DE 19863609691 DE19863609691 DE 19863609691 DE 3609691 A DE3609691 A DE 3609691A DE 3609691 A1 DE3609691 A1 DE 3609691A1
- Authority
- DE
- Germany
- Prior art keywords
- write head
- heating resistor
- halogen atoms
- head according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims description 128
- 238000010438 heat treatment Methods 0.000 claims description 112
- 239000000463 material Substances 0.000 claims description 59
- 125000005843 halogen group Chemical group 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 45
- 238000009826 distribution Methods 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000002344 surface layer Substances 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 description 50
- 239000010408 film Substances 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- -1 ethylene series hydrocarbons Chemical class 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018287 SbF 5 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- GBECUEIQVRDUKB-UHFFFAOYSA-M thallium monochloride Chemical compound [Tl]Cl GBECUEIQVRDUKB-UHFFFAOYSA-M 0.000 description 1
- IAQRGUVFOMOMEM-ONEGZZNKSA-N trans-but-2-ene Chemical compound C\C=C\C IAQRGUVFOMOMEM-ONEGZZNKSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60058847A JPS61218115A (ja) | 1985-03-23 | 1985-03-23 | 熱記録ヘツド |
| JP60058532A JPS61219101A (ja) | 1985-03-25 | 1985-03-25 | 熱記録ヘツド |
| JP60058530A JPS61218108A (ja) | 1985-03-25 | 1985-03-25 | 熱記録ヘツド |
| JP60059392A JPS61219107A (ja) | 1985-03-26 | 1985-03-26 | 熱記録ヘツド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3609691A1 true DE3609691A1 (de) | 1986-10-02 |
| DE3609691C2 DE3609691C2 (enExample) | 1991-12-05 |
Family
ID=27463661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863609691 Granted DE3609691A1 (de) | 1985-03-23 | 1986-03-21 | Thermischer schreibkopf |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4804974A (enExample) |
| DE (1) | DE3609691A1 (enExample) |
| GB (1) | GB2174877B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3618533A1 (de) * | 1985-06-10 | 1986-12-11 | Canon K.K., Tokio/Tokyo | Fluessigkeitsstrahl-aufzeichnungskopf und diesen fluessigkeitsstrahl-aufzeichnungskopf enthaltendes aufzeichnungssystem |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0570021B1 (en) * | 1987-12-02 | 1997-03-19 | Canon Kabushiki Kaisha | Ink jet head, substrate therefor, process for preparing thereof and ink jet apparatus having said head |
| KR100319718B1 (ko) * | 1996-02-08 | 2002-04-17 | 니시무로 타이죠 | 서멀프린트헤드,서멀프린트헤드의제조방법,기록장치,소결체및타깃 |
| JP3178375B2 (ja) * | 1997-06-03 | 2001-06-18 | 日本電気株式会社 | 絶縁膜の形成方法 |
| US7197253B2 (en) * | 2004-09-01 | 2007-03-27 | Konica Minolta Business Technologies, Inc. | Image forming apparatus including two CPUs to control a fixing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56154076A (en) * | 1980-04-30 | 1981-11-28 | Tdk Corp | Thermal head |
| JPS57178877A (en) * | 1981-04-30 | 1982-11-04 | Oki Electric Ind Co Ltd | Thermal head |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB923842A (en) * | 1959-09-21 | 1963-04-18 | Morganite Resistors Ltd | Resistive elements |
| US3301707A (en) * | 1962-12-27 | 1967-01-31 | Union Carbide Corp | Thin film resistors and methods of making thereof |
| US3639165A (en) * | 1968-06-20 | 1972-02-01 | Gen Electric | Resistor thin films formed by low-pressure deposition of molybdenum and tungsten |
| US3604970A (en) * | 1968-10-14 | 1971-09-14 | Varian Associates | Nonelectron emissive electrode structure utilizing ion-plated nonemissive coatings |
| US3645783A (en) * | 1970-06-03 | 1972-02-29 | Infrared Ind Inc | Thin film planar resistor |
| US3757088A (en) * | 1972-02-29 | 1973-09-04 | Hercules Inc | He same electrically conducting elastomers and electrical members embodying t |
| LU67513A1 (enExample) * | 1972-11-20 | 1973-07-13 | ||
| US4060660A (en) * | 1976-01-15 | 1977-11-29 | Rca Corporation | Deposition of transparent amorphous carbon films |
| US4036786A (en) * | 1976-03-26 | 1977-07-19 | Globe-Union Inc. | Fluorinated carbon composition and resistor utilizing same |
| GB1582231A (en) * | 1976-08-13 | 1981-01-07 | Nat Res Dev | Application of a layer of carbonaceous material to a surface |
| DE2719988C2 (de) * | 1977-05-04 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Amorphe, Tantal enthaltende mindestens bis 300 Grad C temperaturstabile Metallschicht und Verfahren zu ihrer Herstellung |
| US4296309A (en) * | 1977-05-19 | 1981-10-20 | Canon Kabushiki Kaisha | Thermal head |
| DE2724498C2 (de) * | 1977-05-31 | 1982-06-03 | Siemens AG, 1000 Berlin und 8000 München | Elektrischer Schichtwiderstand und Verfahren zu seiner Herstellung |
| NL7714567A (nl) * | 1977-12-30 | 1979-07-03 | Philips Nv | Koolweerstand en werkwijze voor de vervaardiging van een koolweerstand. |
| US4487709A (en) * | 1979-03-29 | 1984-12-11 | Showa Denko K.K. | Process for producing electrically conductive high polymer of acetylene |
| JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
| JPS5649521A (en) * | 1979-09-28 | 1981-05-06 | Yasutoshi Kajiwara | Formation of thin film |
| DE3040972A1 (de) * | 1979-10-30 | 1981-05-14 | Fuji Photo Film Co. Ltd., Minami-Ashigara, Kanagawa | Elektrophotographisches lichtempfindliches material und verfahren zu dessen herstellung |
| EP0049032B1 (en) * | 1980-08-21 | 1986-09-17 | National Research Development Corporation | Coating insulating materials by glow discharge |
| GB2083841B (en) * | 1980-08-21 | 1985-03-13 | Secr Defence | Glow discharge coating |
| US4522663A (en) * | 1980-09-09 | 1985-06-11 | Sovonics Solar Systems | Method for optimizing photoresponsive amorphous alloys and devices |
| DE3130497A1 (de) * | 1981-07-23 | 1983-02-10 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung luftstabiler, elektrisch leitfaehiger, polymerer polyensysteme und ihre verwendung in der elektrotechnik und zur antistatischen ausruestung von kunststoffen |
| JPS5842472A (ja) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | サ−マルヘツド |
| JPS5842473A (ja) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | サ−マルヘツド作製方法 |
| FR2514743B1 (fr) * | 1981-10-21 | 1986-05-09 | Rca Corp | Pellicule amorphe a base de carbone, du type diamant, et son procede de fabrication |
| US4436797A (en) * | 1982-06-30 | 1984-03-13 | International Business Machines Corporation | X-Ray mask |
| JPS59179152A (ja) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | アモルファスシリコン半導体薄膜の製造方法 |
| JPH0624855B2 (ja) * | 1983-04-20 | 1994-04-06 | キヤノン株式会社 | 液体噴射記録ヘッド |
| JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
| DE3316182A1 (de) * | 1983-05-04 | 1984-11-08 | Basf Ag, 6700 Ludwigshafen | Verwendung von pyrrol-polymerisaten als elektrische heizelemente |
| JPS59230773A (ja) * | 1983-06-14 | 1984-12-25 | Kyocera Corp | サ−マルヘツド |
| JPH0783031B2 (ja) * | 1984-03-08 | 1995-09-06 | 敏和 須田 | ▲ｉｉ▼−▲ｖ▼族化合物半導体の薄膜又は結晶の製造方法 |
| CA1232228A (en) * | 1984-03-13 | 1988-02-02 | Tatsuro Miyasato | Coating film and method and apparatus for producing the same |
-
1986
- 1986-03-21 GB GB8607087A patent/GB2174877B/en not_active Expired
- 1986-03-21 DE DE19863609691 patent/DE3609691A1/de active Granted
-
1987
- 1987-02-17 US US07/016,509 patent/US4804974A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56154076A (en) * | 1980-04-30 | 1981-11-28 | Tdk Corp | Thermal head |
| JPS57178877A (en) * | 1981-04-30 | 1982-11-04 | Oki Electric Ind Co Ltd | Thermal head |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3618533A1 (de) * | 1985-06-10 | 1986-12-11 | Canon K.K., Tokio/Tokyo | Fluessigkeitsstrahl-aufzeichnungskopf und diesen fluessigkeitsstrahl-aufzeichnungskopf enthaltendes aufzeichnungssystem |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8607087D0 (en) | 1986-04-30 |
| GB2174877B (en) | 1989-03-15 |
| GB2174877A (en) | 1986-11-12 |
| DE3609691C2 (enExample) | 1991-12-05 |
| US4804974A (en) | 1989-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |