DE3608783C2 - - Google Patents
Info
- Publication number
- DE3608783C2 DE3608783C2 DE19863608783 DE3608783A DE3608783C2 DE 3608783 C2 DE3608783 C2 DE 3608783C2 DE 19863608783 DE19863608783 DE 19863608783 DE 3608783 A DE3608783 A DE 3608783A DE 3608783 C2 DE3608783 C2 DE 3608783C2
- Authority
- DE
- Germany
- Prior art keywords
- gas
- rotation
- carrier body
- nozzle
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 14
- 238000000407 epitaxy Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 24
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863608783 DE3608783A1 (de) | 1986-03-15 | 1986-03-15 | Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863608783 DE3608783A1 (de) | 1986-03-15 | 1986-03-15 | Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3608783A1 DE3608783A1 (de) | 1987-09-17 |
| DE3608783C2 true DE3608783C2 (enrdf_load_stackoverflow) | 1989-06-01 |
Family
ID=6296505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19863608783 Granted DE3608783A1 (de) | 1986-03-15 | 1986-03-15 | Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3608783A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005226A (en) * | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
| US6964876B2 (en) | 2001-05-17 | 2005-11-15 | Aixtron Ag | Method and device for depositing layers |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3907610A1 (de) * | 1989-03-09 | 1990-09-13 | Telefunken Electronic Gmbh | Epitaxieverfahren |
| US5155062A (en) * | 1990-12-20 | 1992-10-13 | Cree Research, Inc. | Method for silicon carbide chemical vapor deposition using levitated wafer system |
| JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
| US6449428B2 (en) * | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| NL1011487C2 (nl) | 1999-03-08 | 2000-09-18 | Koninkl Philips Electronics Nv | Werkwijze en inrichting voor het roteren van een wafer. |
| DE19940033A1 (de) * | 1999-08-24 | 2001-05-17 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal |
| CA2387373A1 (en) | 1999-11-02 | 2001-06-28 | Tokyo Electron Limited | Method and apparatus for supercritical processing of a workpiece |
| US6748960B1 (en) | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
| NL1013989C2 (nl) | 1999-12-29 | 2001-07-02 | Asm Int | Werkwijze en inrichting voor het behandelen van een wafer. |
| AU2001257564A1 (en) | 2000-05-08 | 2001-11-20 | Tokyo Electron Limited | Method and apparatus for agitation of workpiece in high pressure environment |
| JP4724353B2 (ja) | 2000-07-26 | 2011-07-13 | 東京エレクトロン株式会社 | 半導体基板のための高圧処理チャンバー |
| US7001468B1 (en) | 2002-02-15 | 2006-02-21 | Tokyo Electron Limited | Pressure energized pressure vessel opening and closing device and method of providing therefor |
| DE10260672A1 (de) * | 2002-12-23 | 2004-07-15 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten |
| US7225820B2 (en) | 2003-02-10 | 2007-06-05 | Tokyo Electron Limited | High-pressure processing chamber for a semiconductor wafer |
| US7077917B2 (en) | 2003-02-10 | 2006-07-18 | Tokyo Electric Limited | High-pressure processing chamber for a semiconductor wafer |
| US7270137B2 (en) | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
| US7163380B2 (en) | 2003-07-29 | 2007-01-16 | Tokyo Electron Limited | Control of fluid flow in the processing of an object with a fluid |
| US6883250B1 (en) | 2003-11-04 | 2005-04-26 | Asm America, Inc. | Non-contact cool-down station for wafers |
| US7186093B2 (en) | 2004-10-05 | 2007-03-06 | Tokyo Electron Limited | Method and apparatus for cooling motor bearings of a high pressure pump |
| US7250374B2 (en) | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
| US7307019B2 (en) | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
| US7491036B2 (en) | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
| US7434590B2 (en) | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
| US7140393B2 (en) | 2004-12-22 | 2006-11-28 | Tokyo Electron Limited | Non-contact shuttle valve for flow diversion in high pressure systems |
| US7291565B2 (en) | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| US7435447B2 (en) | 2005-02-15 | 2008-10-14 | Tokyo Electron Limited | Method and system for determining flow conditions in a high pressure processing system |
| US7767145B2 (en) | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
| US7380984B2 (en) | 2005-03-28 | 2008-06-03 | Tokyo Electron Limited | Process flow thermocouple |
| US7494107B2 (en) | 2005-03-30 | 2009-02-24 | Supercritical Systems, Inc. | Gate valve for plus-atmospheric pressure semiconductor process vessels |
| US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
| US7524383B2 (en) | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
| DE102005055252A1 (de) * | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD-Reaktor mit gleitgelagerten Suszeptorhalter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3137301A1 (de) * | 1981-09-18 | 1983-04-14 | Presco Inc., Beverly Hills, Calif. | "verfahren und vorrichtung zur handhabung kleiner teile in der fertigung" |
| DE3306999A1 (de) * | 1982-03-31 | 1983-10-06 | Censor Patent Versuch | Einrichtung zum festhalten eines werkstueckes |
| JPH0669027B2 (ja) * | 1983-02-21 | 1994-08-31 | 株式会社日立製作所 | 半導体ウエハの薄膜形成方法 |
| GB2156582A (en) * | 1984-03-29 | 1985-10-09 | Perkin Elmer Corp | Small part transport system |
-
1986
- 1986-03-15 DE DE19863608783 patent/DE3608783A1/de active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005226A (en) * | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
| US6964876B2 (en) | 2001-05-17 | 2005-11-15 | Aixtron Ag | Method and device for depositing layers |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3608783A1 (de) | 1987-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AIXTRON GMBH, 5100 AACHEN, DE |
|
| 8339 | Ceased/non-payment of the annual fee |