DE3608783A1 - Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung - Google Patents

Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung

Info

Publication number
DE3608783A1
DE3608783A1 DE19863608783 DE3608783A DE3608783A1 DE 3608783 A1 DE3608783 A1 DE 3608783A1 DE 19863608783 DE19863608783 DE 19863608783 DE 3608783 A DE3608783 A DE 3608783A DE 3608783 A1 DE3608783 A1 DE 3608783A1
Authority
DE
Germany
Prior art keywords
gas
carrier body
carrier
semiconductor wafers
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863608783
Other languages
German (de)
English (en)
Other versions
DE3608783C2 (enrdf_load_stackoverflow
Inventor
Egbert Woelk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Priority to DE19863608783 priority Critical patent/DE3608783A1/de
Publication of DE3608783A1 publication Critical patent/DE3608783A1/de
Application granted granted Critical
Publication of DE3608783C2 publication Critical patent/DE3608783C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19863608783 1986-03-15 1986-03-15 Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung Granted DE3608783A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19863608783 DE3608783A1 (de) 1986-03-15 1986-03-15 Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863608783 DE3608783A1 (de) 1986-03-15 1986-03-15 Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung

Publications (2)

Publication Number Publication Date
DE3608783A1 true DE3608783A1 (de) 1987-09-17
DE3608783C2 DE3608783C2 (enrdf_load_stackoverflow) 1989-06-01

Family

ID=6296505

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863608783 Granted DE3608783A1 (de) 1986-03-15 1986-03-15 Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung

Country Status (1)

Country Link
DE (1) DE3608783A1 (enrdf_load_stackoverflow)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3907610A1 (de) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxieverfahren
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
DE4404110A1 (de) * 1993-04-22 1994-10-27 Mitsubishi Electric Corp Substrathalter für MOCVD und MOCVD-Vorrichtung
WO1999027563A1 (en) * 1997-11-24 1999-06-03 Steag Rtp Systems Gmbh Rapid thermal processing (rtp) system with gas driven rotating substrate
WO2000036635A1 (en) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Gas driven rotating susceptor for rapid thermal processing (rtp) system
WO2001014619A1 (de) * 1999-08-24 2001-03-01 Aixtron Ag Verfahren und vorrichtung zur abscheidung von materialien mit grosser elektronishcer bandlücke und grosser bindungsenergie
WO2001085391A3 (en) * 2000-05-08 2002-05-23 Tokyo Electron Ltd Method and apparatus for agitation of workpiece in high pressure environment
US6560896B2 (en) * 1999-12-29 2003-05-13 Asm International N.V. Apparatus, method and system for the treatment of a wafer
US6736149B2 (en) 1999-11-02 2004-05-18 Supercritical Systems, Inc. Method and apparatus for supercritical processing of multiple workpieces
DE10260672A1 (de) * 2002-12-23 2004-07-15 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten
US6883250B1 (en) 2003-11-04 2005-04-26 Asm America, Inc. Non-contact cool-down station for wafers
US6921456B2 (en) 2000-07-26 2005-07-26 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6926798B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Apparatus for supercritical processing of a workpiece
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7351293B2 (en) 1999-03-08 2008-04-01 Asm International N.V. Method and device for rotating a wafer
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10124609B4 (de) 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137301A1 (de) * 1981-09-18 1983-04-14 Presco Inc., Beverly Hills, Calif. "verfahren und vorrichtung zur handhabung kleiner teile in der fertigung"
DE3306999A1 (de) * 1982-03-31 1983-10-06 Censor Patent Versuch Einrichtung zum festhalten eines werkstueckes
DE3402630A1 (de) * 1983-02-21 1984-08-23 Hitachi, Ltd., Tokio/Tokyo Verfahren und vorrichtung fuer die waermebehandlung eines plattenfoermigen koerpers
DE3504021A1 (de) * 1984-03-29 1985-10-03 The Perkin-Elmer Corp., Norwalk, Conn. Magnetisch gekoppeltes luftschienentransportsystem fuer eine wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137301A1 (de) * 1981-09-18 1983-04-14 Presco Inc., Beverly Hills, Calif. "verfahren und vorrichtung zur handhabung kleiner teile in der fertigung"
DE3306999A1 (de) * 1982-03-31 1983-10-06 Censor Patent Versuch Einrichtung zum festhalten eines werkstueckes
DE3402630A1 (de) * 1983-02-21 1984-08-23 Hitachi, Ltd., Tokio/Tokyo Verfahren und vorrichtung fuer die waermebehandlung eines plattenfoermigen koerpers
DE3504021A1 (de) * 1984-03-29 1985-10-03 The Perkin-Elmer Corp., Norwalk, Conn. Magnetisch gekoppeltes luftschienentransportsystem fuer eine wafer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IBM Technical Disclosure Bulletin, 13, Nr.7, Dez. 1970, S.2081 *

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3907610A1 (de) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxieverfahren
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
DE4404110A1 (de) * 1993-04-22 1994-10-27 Mitsubishi Electric Corp Substrathalter für MOCVD und MOCVD-Vorrichtung
DE4404110C2 (de) * 1993-04-22 1998-01-22 Mitsubishi Electric Corp Substrathalter für die metallorganische chemische Dampfabscheidung
WO1999027563A1 (en) * 1997-11-24 1999-06-03 Steag Rtp Systems Gmbh Rapid thermal processing (rtp) system with gas driven rotating substrate
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
WO2000036635A1 (en) * 1998-12-11 2000-06-22 Steag Rtp Systems Gmbh Gas driven rotating susceptor for rapid thermal processing (rtp) system
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
US7351293B2 (en) 1999-03-08 2008-04-01 Asm International N.V. Method and device for rotating a wafer
WO2001014619A1 (de) * 1999-08-24 2001-03-01 Aixtron Ag Verfahren und vorrichtung zur abscheidung von materialien mit grosser elektronishcer bandlücke und grosser bindungsenergie
US6736149B2 (en) 1999-11-02 2004-05-18 Supercritical Systems, Inc. Method and apparatus for supercritical processing of multiple workpieces
US7060422B2 (en) 1999-11-02 2006-06-13 Tokyo Electron Limited Method of supercritical processing of a workpiece
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6926012B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Method for supercritical processing of multiple workpieces
US6926798B2 (en) 1999-11-02 2005-08-09 Tokyo Electron Limited Apparatus for supercritical processing of a workpiece
US6877250B2 (en) 1999-12-29 2005-04-12 Asm International N.V. Apparatus, method and system for the treatment of a wafer
US6560896B2 (en) * 1999-12-29 2003-05-13 Asm International N.V. Apparatus, method and system for the treatment of a wafer
WO2001085391A3 (en) * 2000-05-08 2002-05-23 Tokyo Electron Ltd Method and apparatus for agitation of workpiece in high pressure environment
US6487792B2 (en) 2000-05-08 2002-12-03 Tokyo Electron Limited Method and apparatus for agitation of workpiece in high pressure environment
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US6921456B2 (en) 2000-07-26 2005-07-26 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7001468B1 (en) 2002-02-15 2006-02-21 Tokyo Electron Limited Pressure energized pressure vessel opening and closing device and method of providing therefor
DE10260672A1 (de) * 2002-12-23 2004-07-15 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten
US7098157B2 (en) 2002-12-23 2006-08-29 Mattson Thermal Products Gmbh Method and apparatus for thermally treating disk-shaped substrates
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7147720B2 (en) 2003-11-04 2006-12-12 Asm America, Inc. Non-contact cool-down station for wafers
US6883250B1 (en) 2003-11-04 2005-04-26 Asm America, Inc. Non-contact cool-down station for wafers
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter

Also Published As

Publication number Publication date
DE3608783C2 (enrdf_load_stackoverflow) 1989-06-01

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AIXTRON GMBH, 5100 AACHEN, DE

8339 Ceased/non-payment of the annual fee