DE3606557A1 - Farbempfindlicher sensor - Google Patents
Farbempfindlicher sensorInfo
- Publication number
- DE3606557A1 DE3606557A1 DE19863606557 DE3606557A DE3606557A1 DE 3606557 A1 DE3606557 A1 DE 3606557A1 DE 19863606557 DE19863606557 DE 19863606557 DE 3606557 A DE3606557 A DE 3606557A DE 3606557 A1 DE3606557 A1 DE 3606557A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- tco
- thickness
- color
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 10
- 238000005375 photometry Methods 0.000 claims abstract description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 230000003595 spectral effect Effects 0.000 description 8
- 238000010276 construction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Spectrometry And Color Measurement (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863606557 DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863606557 DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3606557A1 true DE3606557A1 (de) | 1987-09-03 |
DE3606557C2 DE3606557C2 (enrdf_load_stackoverflow) | 1989-05-18 |
Family
ID=6295185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19863606557 Granted DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3606557A1 (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3736201A1 (de) * | 1987-10-26 | 1989-05-03 | Siemens Ag | Wellenlaengenselektives diodenarray |
DE4306565A1 (de) * | 1993-03-03 | 1994-09-08 | Telefunken Microelectron | Verfahren zur Herstellung eines blauempfindlichen Photodetektors |
DE19935180A1 (de) * | 1999-07-27 | 2001-02-15 | Fraunhofer Ges Forschung | Solarzellen-Sensoren, Verfahren zu ihrer Herstellung und ihrer Anwendung |
FR2939239A1 (fr) * | 2008-12-03 | 2010-06-04 | Ecole Polytech | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
WO2012171512A1 (de) * | 2011-06-11 | 2012-12-20 | Forschungszentrum Jülich GmbH | Verfahren zur herstellung einer kontaktschicht eines solarmoduls und auf diese weise hergestelltes solarmodul |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3217227A1 (de) * | 1981-05-08 | 1982-11-25 | Omron Tateisi Electronics Co., Kyoto | Farbfeststellungsvorrichtung |
-
1986
- 1986-02-28 DE DE19863606557 patent/DE3606557A1/de active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3217227A1 (de) * | 1981-05-08 | 1982-11-25 | Omron Tateisi Electronics Co., Kyoto | Farbfeststellungsvorrichtung |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3736201A1 (de) * | 1987-10-26 | 1989-05-03 | Siemens Ag | Wellenlaengenselektives diodenarray |
DE4306565A1 (de) * | 1993-03-03 | 1994-09-08 | Telefunken Microelectron | Verfahren zur Herstellung eines blauempfindlichen Photodetektors |
US5424222A (en) * | 1993-03-03 | 1995-06-13 | Temic Telefunken Microelectronic Gmbh | Method for manufacture of a blue-sensitive photodetector |
DE19935180A1 (de) * | 1999-07-27 | 2001-02-15 | Fraunhofer Ges Forschung | Solarzellen-Sensoren, Verfahren zu ihrer Herstellung und ihrer Anwendung |
DE19935180C2 (de) * | 1999-07-27 | 2001-08-02 | Fraunhofer Ges Forschung | Solarzellen-Sensoren, Verfahren zu ihrer Herstellung und ihrer Anwendung |
US6455320B1 (en) | 1999-07-27 | 2002-09-24 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Solar cell sensors, process for their manufacture and their use |
FR2939239A1 (fr) * | 2008-12-03 | 2010-06-04 | Ecole Polytech | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
WO2010063970A3 (fr) * | 2008-12-03 | 2010-12-02 | Ecole Polytechnique | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
KR20110099009A (ko) * | 2008-12-03 | 2011-09-05 | 에꼴레 폴리테크닉 | 가변 두께를 갖는 투명한 도전성 전극을 포함하는 광전지 모듈, 및 이를 제조하는 방법들 |
JP2012510722A (ja) * | 2008-12-03 | 2012-05-10 | エコール ポリテクニク | 可変厚さを有する透明導電性電極を備える太陽電池モジュール、及びその製造方法 |
CN102301486B (zh) * | 2008-12-03 | 2014-01-15 | 综合工科学校 | 包括具有可变厚度的透明导电电极的光生伏打模块及其制造方法 |
US10002978B2 (en) | 2008-12-03 | 2018-06-19 | Ecole Polytechnique | Photovoltaic module including a transparent conductive electrode having a variable thickness, and methods for manufacturing same |
WO2012171512A1 (de) * | 2011-06-11 | 2012-12-20 | Forschungszentrum Jülich GmbH | Verfahren zur herstellung einer kontaktschicht eines solarmoduls und auf diese weise hergestelltes solarmodul |
Also Published As
Publication number | Publication date |
---|---|
DE3606557C2 (enrdf_load_stackoverflow) | 1989-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8363 | Opposition against the patent | ||
8325 | Change of the main classification |
Ipc: H01L 27/146 |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: DEUTSCHE AEROSPACE AG, 8000 MUENCHEN, DE |
|
8339 | Ceased/non-payment of the annual fee |