DE3606557C2 - - Google Patents
Info
- Publication number
- DE3606557C2 DE3606557C2 DE3606557A DE3606557A DE3606557C2 DE 3606557 C2 DE3606557 C2 DE 3606557C2 DE 3606557 A DE3606557 A DE 3606557A DE 3606557 A DE3606557 A DE 3606557A DE 3606557 C2 DE3606557 C2 DE 3606557C2
- Authority
- DE
- Germany
- Prior art keywords
- tco
- electrode
- color
- areas
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000035945 sensitivity Effects 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000005375 photometry Methods 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863606557 DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863606557 DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3606557A1 DE3606557A1 (de) | 1987-09-03 |
DE3606557C2 true DE3606557C2 (enrdf_load_stackoverflow) | 1989-05-18 |
Family
ID=6295185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19863606557 Granted DE3606557A1 (de) | 1986-02-28 | 1986-02-28 | Farbempfindlicher sensor |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3606557A1 (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3736201C2 (de) * | 1987-10-26 | 1993-12-09 | Siemens Ag | Wellenlängenselektives Diodenarray |
DE4306565C2 (de) * | 1993-03-03 | 1995-09-28 | Telefunken Microelectron | Verfahren zur Herstellung eines blauempfindlichen Photodetektors |
DE19935180C2 (de) * | 1999-07-27 | 2001-08-02 | Fraunhofer Ges Forschung | Solarzellen-Sensoren, Verfahren zu ihrer Herstellung und ihrer Anwendung |
FR2939239B1 (fr) | 2008-12-03 | 2010-12-31 | Ecole Polytech | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
DE102011104020A1 (de) * | 2011-06-11 | 2012-12-13 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer Kontaktschicht eines Solarmoduls und auf diese Weise hergestelltes Solarmodul |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3217227C2 (de) * | 1981-05-08 | 1986-11-27 | Omron Tateisi Electronics Co., Kyoto | Farbfeststellungsvorrichtung |
-
1986
- 1986-02-28 DE DE19863606557 patent/DE3606557A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3606557A1 (de) | 1987-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3522104C2 (enrdf_load_stackoverflow) | ||
DE69115834T2 (de) | Vorrichtungen von Infrarot-Detektoren | |
DE69222229T2 (de) | Zweifarbige Strahlungsdetektoranordnung und Verfahren zu ihrer Herstellung | |
DE60131707T2 (de) | Fingerabdruck-Lesegerät mit Entladungsschutz | |
DE19737561C1 (de) | Mehrfarbensensor | |
DE2741226B2 (de) | Festkörper-Farbbildaufnahmeeinrichtung | |
DE2723914B2 (de) | Lichtfühler | |
DE102008015562A1 (de) | Fotodetektor mit Dunkelstromkorrektur | |
EP2210073B1 (de) | Schaltungsanordnung zum erzeugen von licht- und temperaturabhängigen signalen, insbesondere für ein bildgebendes pyrometer | |
DE2725174A1 (de) | Silizium-ctd-bildsensoranordnung | |
DE19838460A1 (de) | Einrichtung zur Bestimmung des Einfallswinkels einer Lichtquelle, insbesondere der Sonne | |
DE3500645C2 (de) | Fotosensoranordnung | |
DE3877785T2 (de) | Seitlich bestrahlte detektorenanordnung mit stoerstellenbandleitung. | |
DE3606557C2 (enrdf_load_stackoverflow) | ||
DE69223841T2 (de) | Bilderempfangsapparat | |
EP0892992B1 (de) | Drei-farbensensor mit einer pin- oder nip-schichtenfolge | |
DE69503565T2 (de) | Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-Farbbildaufnahmen | |
DE69802234T2 (de) | Aus amorphem Silizium und Legierungen bestehendes Infrarot-Detektor Bauelement | |
DE69123206T2 (de) | Auflösungsgerät | |
DE69007303T2 (de) | Strahlungsdetektor. | |
DE3217227C2 (de) | Farbfeststellungsvorrichtung | |
DE3883184T2 (de) | Bildsensor. | |
DE3533146A1 (de) | Farbsensorelement, farbempfindliche sensoranordnung mit derartigen farbsensorelementen, eine anwendung des elements oder der anordnung und ein verfahren zur herstellung eines halbleitermaterials fuer das farbsensorelement | |
DE3612101C2 (enrdf_load_stackoverflow) | ||
DE2930180C2 (enrdf_load_stackoverflow) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8363 | Opposition against the patent | ||
8325 | Change of the main classification |
Ipc: H01L 27/146 |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: DEUTSCHE AEROSPACE AG, 8000 MUENCHEN, DE |
|
8339 | Ceased/non-payment of the annual fee |