DE3587881D1 - Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff. - Google Patents

Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff.

Info

Publication number
DE3587881D1
DE3587881D1 DE3587881T DE3587881T DE3587881D1 DE 3587881 D1 DE3587881 D1 DE 3587881D1 DE 3587881 T DE3587881 T DE 3587881T DE 3587881 T DE3587881 T DE 3587881T DE 3587881 D1 DE3587881 D1 DE 3587881D1
Authority
DE
Germany
Prior art keywords
diamond
carbon
producing
film
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3587881T
Other languages
English (en)
Other versions
DE3587881T2 (de
Inventor
Hideo Kurokawa
Tsutomu Mitani
Taketoshi Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25220584A external-priority patent/JPS61130487A/ja
Priority claimed from JP59258038A external-priority patent/JPH0637704B2/ja
Priority claimed from JP18201885A external-priority patent/JPH062953B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3587881D1 publication Critical patent/DE3587881D1/de
Publication of DE3587881T2 publication Critical patent/DE3587881T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE19853587881 1984-11-29 1985-11-28 Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff. Expired - Lifetime DE3587881T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25220584A JPS61130487A (ja) 1984-11-29 1984-11-29 プラズマ・インジエクシヨン・ｃｖｄ装置
JP59258038A JPH0637704B2 (ja) 1984-12-06 1984-12-06 高硬度炭素膜形成方法
JP18201885A JPH062953B2 (ja) 1985-08-20 1985-08-20 薄膜形成装置

Publications (2)

Publication Number Publication Date
DE3587881D1 true DE3587881D1 (de) 1994-08-18
DE3587881T2 DE3587881T2 (de) 1995-03-02

Family

ID=27325107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853587881 Expired - Lifetime DE3587881T2 (de) 1984-11-29 1985-11-28 Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff.

Country Status (2)

Country Link
EP (1) EP0183254B1 (de)
DE (1) DE3587881T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0252755A1 (de) * 1986-07-11 1988-01-13 Unvala Limited Chemische Vakuum-Abscheidung
US4859490A (en) * 1986-07-23 1989-08-22 Sumitomo Electric Industries, Ltd. Method for synthesizing diamond
DE3630418C1 (de) * 1986-09-06 1987-12-17 Kernforschungsanlage Juelich Verfahren zur Beschichtung von Werkstuecken mit amorphem,wasserstoffhaltigem Kohlenstoff
DE3630419A1 (de) * 1986-09-06 1988-03-10 Kernforschungsanlage Juelich Verfahren zur beschichtung von hoher waermebelastung ausgesetzten bauelementen mit einer amorphen wasserstoffhaltigen kohlenstoffschicht
EP0411435B1 (de) * 1989-07-31 1994-01-12 Matsushita Electric Industrial Co., Ltd. Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
GB2240114B (en) * 1990-01-18 1993-03-24 Stc Plc Film nucleation process
US5290382A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
DE69312989T2 (de) * 1992-03-13 1997-12-18 Matsushita Electric Ind Co Ltd Plasma-CVD-Anlage und entsprechendes Verfahren
GB2308132A (en) * 1995-12-14 1997-06-18 Imperial College Depositing films on a substrate using an electric field
DE19947381B4 (de) * 1999-10-01 2011-06-22 METAPLAS IONON Oberflächenveredelungstechnik GmbH, 51427 Vorrichtung zur Wärmebehandlung von Werkstücken, insbesondere zum Gasnitrieren, Nitrocarburieren und Oxidieren
AU2009292608B2 (en) * 2008-09-26 2010-10-21 Ngk Insulators, Ltd. Film forming apparatus
CN115595561A (zh) * 2022-10-31 2023-01-13 胡倩（Cn） 一种等离子体增强原子层沉积设备及沉积方法
CN116920727B (zh) * 2023-09-13 2023-11-24 山西冶金工程技术有限公司 富氢气体催化系统的除炭装置以及富氢气体催化系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
US4523971A (en) * 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system

Also Published As

Publication number Publication date
EP0183254B1 (de) 1994-07-13
EP0183254A3 (en) 1989-01-25
EP0183254A2 (de) 1986-06-04
DE3587881T2 (de) 1995-03-02

Similar Documents

Publication Publication Date Title
DE68917500D1 (de) Verfahren zur Herstellung eines wesentlich aus Silizium und/oder anderen Gruppe IV-Elementen bestehenden Films mittels Mikrowellen-Plasma chemischer Dampfabscheidung.
DE3587881D1 (de) Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff.
DE3587964D1 (de) Verfahren und Vorrichtung zur chemischen Abscheidung aus der Dampfphase mittels eines durch Magnetron verstärkten Plasmas.
DE69114175D1 (de) Verfahren zur Herstellung von einer Maske und einem Dünnschichttransistor.
DE58906873D1 (de) Verfahren zur Herstellung eines flexiblen Trägersubstrates.
DE69011729D1 (de) Verfahren zur Herstellung eines Graphitfilms.
DE3483389D1 (de) Reaktor und suszeptor fuer ein verfahren zur chemischen dampfphasenabscheidung.
ATE109216T1 (de) Verfahren zur herstellung von verbundmaterialteilchen und deren verwendung.
DE69328390T2 (de) Verfahren zur Herstellung eines mehrlagigen Substrats
DE69016980D1 (de) Verfahren zur Herstellung eines CVD SiO2 Films mit einer TEOS-O3 Reaktion.
DE69214988D1 (de) Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung
DE69125118D1 (de) Verfahren zur Herstellung eines Diamant-Überzuges
DE69208329D1 (de) Verfahren zur Herstellung von Metallcarbiden mit erhöhter spezifischer Oberfläche aus aktivierten Kohleschaumstoffen
DE69132911D1 (de) Verfahren zur Dampfabscheidung eines Halbleiterkristalls
DE69602300T2 (de) Verfahren zur Abscheidung von Kohlenstoffschichten
DE69106091D1 (de) Verfahren zur Abscheidung eines dünnen Films.
DE68909395D1 (de) Verfahren zur Ablagerung eines dünnen Oxydfilms.
DE69026059D1 (de) Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion
DE69106834D1 (de) Verfahren und Anlage zur Herstellung eines Beschichtungsfilms.
DE68920417D1 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Films.
DE3677951D1 (de) Verfahren zur herstellung eines vielschichtigen strukturierten films.
DE3887907D1 (de) Verfahren zur Herstellung eines hochmodularen Films.
DE69133487T2 (de) Verfahren zur Herstellung eines dünnen metallischen Films
DE69425340D1 (de) Verfahren zur Verbesserung der Selektivität von Kohlenstoffmembranen durch chemische Kohlenstoffdampfabscheidung
DE3854977T3 (de) Verfahren zur Abscheidung eines supraleitenden dünnen Filmes

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)