DE3587797T2 - Transistor mit horizontaler Struktur und Verfahren zu dessen Herstellung. - Google Patents
Transistor mit horizontaler Struktur und Verfahren zu dessen Herstellung.Info
- Publication number
- DE3587797T2 DE3587797T2 DE19853587797 DE3587797T DE3587797T2 DE 3587797 T2 DE3587797 T2 DE 3587797T2 DE 19853587797 DE19853587797 DE 19853587797 DE 3587797 T DE3587797 T DE 3587797T DE 3587797 T2 DE3587797 T2 DE 3587797T2
- Authority
- DE
- Germany
- Prior art keywords
- island
- zone
- region
- epitaxial
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 43
- 229920005591 polysilicon Polymers 0.000 description 41
- 150000004767 nitrides Chemical class 0.000 description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 230000000295 complement effect Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000007943 implant Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000000284 resting effect Effects 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021339 platinum silicide Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- -1 titanium tungsten aluminum Chemical compound 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66694284A | 1984-10-31 | 1984-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3587797D1 DE3587797D1 (de) | 1994-05-19 |
DE3587797T2 true DE3587797T2 (de) | 1994-07-28 |
Family
ID=24676160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19853587797 Expired - Fee Related DE3587797T2 (de) | 1984-10-31 | 1985-10-14 | Transistor mit horizontaler Struktur und Verfahren zu dessen Herstellung. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0180363B1 (fr) |
JP (1) | JPS61180481A (fr) |
CN (1) | CN1004594B (fr) |
DE (1) | DE3587797T2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0812865B2 (ja) * | 1989-06-06 | 1996-02-07 | 株式会社東芝 | バイポーラトランジスタとその製造方法 |
US5994739A (en) * | 1990-07-02 | 1999-11-30 | Kabushiki Kaisha Toshiba | Integrated circuit device |
JP3190057B2 (ja) * | 1990-07-02 | 2001-07-16 | 株式会社東芝 | 複合集積回路装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3174777D1 (en) * | 1980-10-23 | 1986-07-10 | Fairchild Camera Instr Co | Method of fabricating integrated circuit structure |
EP0059264A1 (fr) * | 1981-03-02 | 1982-09-08 | Rockwell International Corporation | Transistor latéral NPN avec interférence minimum due au substrat et son procédé de fabrication |
EP0068073A2 (fr) * | 1981-07-01 | 1983-01-05 | Rockwell International Corporation | Transistor latérale du type PNP dont le fonctionnement est influancé d'une façon minimale par le substrat et son procédé de fabrication |
JPS5852817A (ja) * | 1981-09-25 | 1983-03-29 | Hitachi Ltd | 半導体装置及びその製造方法 |
EP0144654A3 (fr) * | 1983-11-03 | 1987-10-07 | General Electric Company | Dispositif semi-conducteur comportant un transistor à effet de champ à porte isolée, diélectriquement isolé |
-
1985
- 1985-10-14 DE DE19853587797 patent/DE3587797T2/de not_active Expired - Fee Related
- 1985-10-14 EP EP19850307333 patent/EP0180363B1/fr not_active Expired - Lifetime
- 1985-10-30 CN CN85108008.1A patent/CN1004594B/zh not_active Expired
- 1985-10-30 JP JP24381585A patent/JPS61180481A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61180481A (ja) | 1986-08-13 |
CN1004594B (zh) | 1989-06-21 |
JPH0523495B2 (fr) | 1993-04-02 |
EP0180363A2 (fr) | 1986-05-07 |
CN85108008A (zh) | 1986-05-10 |
DE3587797D1 (de) | 1994-05-19 |
EP0180363B1 (fr) | 1994-04-13 |
EP0180363A3 (en) | 1987-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69225552T2 (de) | Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung | |
DE69328758T2 (de) | Verfahren zur Herstellung von SOI-Bipolar- und MOS-Transistoren | |
DE3019850C2 (fr) | ||
DE69030415T2 (de) | Verfahren zur Herstellung eines DMOS Transistors | |
EP0032550B1 (fr) | Procédé de fabrication d'une structure verticale de transistor PNP bipolaire | |
DE69618285T2 (de) | Quasi-vertikaler DMOS in MOS- oder BICMOS-Verfahren mit hohem Wirkungsgrad | |
DE69032735T2 (de) | Verfahren zum Herstellen von Hochspannungs- und Niederspannungs-CMOS-Transistoren in einem einzigen integrierten Schaltungs-Chip | |
EP0036634B1 (fr) | Procédé de fabrication d'une structure de transistor bipolaire | |
DE2317577C2 (de) | Verfahren zur Herstellung dielektrisch isolierter Halbleiteranordnungen | |
EP0001574B1 (fr) | Dispositif semiconducteur pour structures de résistance dans des circuits intégrés de haute densité et procédé pour sa fabrication | |
DE3334337A1 (de) | Verfahren zur herstellung einer integrierten halbleitereinrichtung | |
DE2916364C2 (fr) | ||
EP0020998B1 (fr) | Procédé de fabrication d'un transistor bipolaire comprenant une zône d'émetteur à implantation ionique | |
DE3110477A1 (de) | Verfahren zur herstellung von cmos-bauelementen | |
DE2541548A1 (de) | Isolierschicht-feldeffekttransistor und verfahren zu dessen herstellung | |
DE2445879C2 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
DE3603470A1 (de) | Verfahren zur herstellung von feldeffektbauelementen auf einem siliziumsubstrat | |
EP0001586A1 (fr) | Dispositif semiconducteur intégré à structures verticales NPN et PNP et procédé pour sa fabrication | |
DE3886062T2 (de) | Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren. | |
DE2420239A1 (de) | Verfahren zur herstellung doppelt diffundierter lateraler transistoren | |
DE69224009T2 (de) | Verfahren zur Herstellung einer Halbleiterstruktur mit MOS- und Bipolar-Bauteilen | |
DE2133976C3 (de) | Monolithisch integrierte Halbleiteranordnung | |
DE69128963T2 (de) | Halbleitervorrichtung und Verfahren zu seiner Herstellung | |
DE3882251T2 (de) | Verfahren zum Herstellen eines bipolaren Transistors unter Verwendung von CMOS-Techniken. | |
DE2218680C2 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |