DE3580515D1 - Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist. - Google Patents

Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist.

Info

Publication number
DE3580515D1
DE3580515D1 DE8585303332T DE3580515T DE3580515D1 DE 3580515 D1 DE3580515 D1 DE 3580515D1 DE 8585303332 T DE8585303332 T DE 8585303332T DE 3580515 T DE3580515 T DE 3580515T DE 3580515 D1 DE3580515 D1 DE 3580515D1
Authority
DE
Germany
Prior art keywords
separate
controlling
magnetic fields
spraying device
limited magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585303332T
Other languages
English (en)
Inventor
Donald M Mintz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3580515D1 publication Critical patent/DE3580515D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8585303332T 1984-05-17 1985-05-10 Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist. Expired - Lifetime DE3580515D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/611,435 US4595482A (en) 1984-05-17 1984-05-17 Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges

Publications (1)

Publication Number Publication Date
DE3580515D1 true DE3580515D1 (de) 1990-12-20

Family

ID=24449010

Family Applications (2)

Application Number Title Priority Date Filing Date
DE198585303332T Pending DE163446T1 (de) 1984-05-17 1985-05-10 Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist.
DE8585303332T Expired - Lifetime DE3580515D1 (de) 1984-05-17 1985-05-10 Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE198585303332T Pending DE163446T1 (de) 1984-05-17 1985-05-10 Einrichtung und verfahren zum regeln einer magnetron-zerstaeubungs-vorrichtung, welche einzelne begrenzte magnetische felder an separierten, getrennten entladungen ausgesetzten auftreffplatten aufweist.

Country Status (5)

Country Link
US (1) US4595482A (de)
EP (1) EP0163446B1 (de)
JP (1) JPH0686658B2 (de)
KR (2) KR900004600B1 (de)
DE (2) DE163446T1 (de)

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JPS63103065A (ja) * 1986-10-20 1988-05-07 Tokyo Electron Ltd スパツタリングによる成膜方法
JPS63140078A (ja) * 1986-11-29 1988-06-11 Tokyo Electron Ltd スパツタリングによる成膜方法
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
JPH01268869A (ja) * 1988-04-20 1989-10-26 Fuji Photo Film Co Ltd スパッタリング装置
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US5126028A (en) * 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US5114556A (en) * 1989-12-27 1992-05-19 Machine Technology, Inc. Deposition apparatus and method for enhancing step coverage and planarization on semiconductor wafers
DE4010495C2 (de) * 1990-03-31 1997-07-31 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Werkstoffen, beispielweise mit Metallen
AU8320491A (en) * 1990-07-06 1992-02-04 Boc Group, Inc., The Method and apparatus for co-sputtering and cross-sputtering homogeneous films
US5080772A (en) * 1990-08-24 1992-01-14 Materials Research Corporation Method of improving ion flux distribution uniformity on a substrate
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JPH0816266B2 (ja) * 1990-10-31 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 高アスペクト比の穴に材料を付着させる装置
US5221425A (en) * 1991-08-21 1993-06-22 International Business Machines Corporation Method for reducing foreign matter on a wafer etched in a reactive ion etching process
US5630916A (en) * 1993-03-02 1997-05-20 Cvc Products, Inc. Magnetic orienting device for thin film deposition and method of use
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US6416635B1 (en) 1995-07-24 2002-07-09 Tokyo Electron Limited Method and apparatus for sputter coating with variable target to substrate spacing
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6464841B1 (en) * 1997-03-04 2002-10-15 Tokyo Electron Limited Cathode having variable magnet configuration
DE59702419D1 (de) * 1997-07-15 2000-11-09 Unaxis Trading Ag Truebbach Verfahren und Vorrichtung zur Sputterbeschichtung
US6280563B1 (en) * 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6342131B1 (en) 1998-04-17 2002-01-29 Kabushiki Kaisha Toshiba Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6106682A (en) * 1998-05-22 2000-08-22 Cvc Products, Inc. Thin-film processing electromagnet for low-skew magnetic orientation
US6042707A (en) * 1998-05-22 2000-03-28 Cvc Products, Inc. Multiple-coil electromagnet for magnetically orienting thin films
US6066242A (en) * 1998-06-10 2000-05-23 David A. Glocker Conical sputtering target
US6432286B1 (en) 1998-06-10 2002-08-13 David A. Glocker Conical sputtering target
US6235170B1 (en) * 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target
US6605195B2 (en) 2000-04-14 2003-08-12 Seagate Technology Llc Multi-layer deposition process using four ring sputter sources
US6359388B1 (en) 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6602371B2 (en) 2001-02-27 2003-08-05 Guardian Industries Corp. Method of making a curved vehicle windshield
DE10234861A1 (de) * 2002-07-31 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Einrichtung zur wechselweisen Abscheidung zweier Materialien durch Kathoden-Zerstäubung
US6988463B2 (en) * 2002-10-18 2006-01-24 Guardian Industries Corp. Ion beam source with gas introduced directly into deposition/vacuum chamber
US6812648B2 (en) * 2002-10-21 2004-11-02 Guardian Industries Corp. Method of cleaning ion source, and corresponding apparatus/system
US6824653B2 (en) * 2003-02-21 2004-11-30 Agilent Technologies, Inc Magnetron with controlled DC power
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
WO2010125002A1 (en) * 2009-04-27 2010-11-04 Oc Oerlikon Balzers Ag Reactive sputtering with multiple sputter sources
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US8685214B1 (en) 2011-09-30 2014-04-01 WD Media, LLC Magnetic shunting pads for optimizing target erosion in sputtering processes
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KR101956857B1 (ko) * 2018-08-27 2019-03-13 (주)제로투세븐 분말용기의 밀봉캡 및 그 제조방법

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JPS582271B2 (ja) * 1978-04-20 1983-01-14 株式会社東芝 スパツタリングタ−ゲツト
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Also Published As

Publication number Publication date
KR900004600B1 (ko) 1990-06-30
KR850008361A (ko) 1985-12-16
KR900004601B1 (ko) 1990-06-30
JPH0686658B2 (ja) 1994-11-02
EP0163446B1 (de) 1990-11-14
EP0163446A1 (de) 1985-12-04
US4595482A (en) 1986-06-17
DE163446T1 (de) 1986-04-30
JPS6141767A (ja) 1986-02-28

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.