DE3579379D1 - Verfahren zur herstellung von einem feldeffekttransistor aus galliumarsenid. - Google Patents

Verfahren zur herstellung von einem feldeffekttransistor aus galliumarsenid.

Info

Publication number
DE3579379D1
DE3579379D1 DE8585107442T DE3579379T DE3579379D1 DE 3579379 D1 DE3579379 D1 DE 3579379D1 DE 8585107442 T DE8585107442 T DE 8585107442T DE 3579379 T DE3579379 T DE 3579379T DE 3579379 D1 DE3579379 D1 DE 3579379D1
Authority
DE
Germany
Prior art keywords
producing
field effect
effect transistor
gallium arsenide
arsenide field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585107442T
Other languages
English (en)
Inventor
Sandip Tiwari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3579379D1 publication Critical patent/DE3579379D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8585107442T 1984-06-29 1985-06-19 Verfahren zur herstellung von einem feldeffekttransistor aus galliumarsenid. Expired - Fee Related DE3579379D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/626,563 US4558509A (en) 1984-06-29 1984-06-29 Method for fabricating a gallium arsenide semiconductor device

Publications (1)

Publication Number Publication Date
DE3579379D1 true DE3579379D1 (de) 1990-10-04

Family

ID=24510930

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107442T Expired - Fee Related DE3579379D1 (de) 1984-06-29 1985-06-19 Verfahren zur herstellung von einem feldeffekttransistor aus galliumarsenid.

Country Status (4)

Country Link
US (1) US4558509A (de)
EP (1) EP0166342B1 (de)
JP (1) JPS6118181A (de)
DE (1) DE3579379D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2597976B2 (ja) * 1985-03-27 1997-04-09 株式会社東芝 半導体装置及びその製造方法
US4710478A (en) * 1985-05-20 1987-12-01 United States Of America As Represented By The Secretary Of The Navy Method for making germanium/gallium arsenide high mobility complementary logic transistors
US5132752A (en) * 1985-05-22 1992-07-21 Hitachi, Ltd. Field effect transistor
JPH0799738B2 (ja) * 1985-09-05 1995-10-25 三菱電機株式会社 半導体装置の製造方法
US4701422A (en) * 1986-04-07 1987-10-20 Rockwell International Corporation Method of adjusting threshold voltage subsequent to fabrication of transistor
US5051792A (en) * 1987-10-20 1991-09-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound for compound semiconductors
US5480367A (en) * 1987-10-26 1996-01-02 Sportsquip Limited Adductor/abductor exercise device
US4863877A (en) * 1987-11-13 1989-09-05 Kopin Corporation Ion implantation and annealing of compound semiconductor layers
DE68916463T2 (de) * 1988-04-12 1994-11-17 Renishaw Plc Signalübertragungssystem für Werkzeugmaschinen, Inspektionsmaschinen und dergleichen.
US5073507A (en) * 1991-03-04 1991-12-17 Motorola, Inc. Producing a plasma containing beryllium and beryllium fluoride
US5227328A (en) * 1991-04-03 1993-07-13 North American Philips Corporation Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations
US5294557A (en) * 1991-08-26 1994-03-15 The United States Of America As Represented By The Secretary Of The Navy Implanting impurities in semiconductors and semiconductor implanted with impurities
US5287145A (en) * 1992-04-16 1994-02-15 Sharp Kabushiki Kaisha Process kit of image forming apparatus
JP2774735B2 (ja) * 1992-05-27 1998-07-09 シャープ株式会社 画像形成装置
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
US5747116A (en) * 1994-11-08 1998-05-05 Micron Technology, Inc. Method of forming an electrical contact to a silicon substrate
US5661115A (en) 1994-11-08 1997-08-26 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
US5633186A (en) * 1995-08-14 1997-05-27 Motorola, Inc. Process for fabricating a non-volatile memory cell in a semiconductor device
US5661064A (en) * 1995-11-13 1997-08-26 Micron Technology, Inc. Method of forming a capacitor having container members
US6218237B1 (en) 1996-01-03 2001-04-17 Micron Technology, Inc. Method of forming a capacitor
US5693377A (en) * 1996-01-08 1997-12-02 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds
US5729045A (en) * 1996-04-02 1998-03-17 Advanced Micro Devices, Inc. Field effect transistor with higher mobility
JP2000036591A (ja) * 1998-07-21 2000-02-02 Fujitsu Quantum Device Kk 半導体装置
US6214687B1 (en) 1999-02-17 2001-04-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
US6929831B2 (en) * 2001-09-15 2005-08-16 Trikon Holdings Limited Methods of forming nitride films
JP6856687B2 (ja) 2019-03-25 2021-04-07 本田技研工業株式会社 自動二輪車の後輪制動装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265934A (en) * 1975-12-12 1981-05-05 Hughes Aircraft Company Method for making improved Schottky-barrier gate gallium arsenide field effect devices
US4193182A (en) * 1977-02-07 1980-03-18 Hughes Aircraft Company Passivated V-gate GaAs field-effect transistor and fabrication process therefor
DE2821975C2 (de) * 1978-05-19 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung
US4330343A (en) * 1979-01-04 1982-05-18 The United States Of America As Represented By The Secretary Of The Navy Refractory passivated ion-implanted GaAs ohmic contacts
DE2917082A1 (de) * 1979-04-27 1980-11-06 Licentia Gmbh Feldeffekttransistor
US4298403A (en) * 1980-02-28 1981-11-03 Davey John E Ion-implanted evaporated germanium layers as n+ contacts to GaAs
US4396437A (en) * 1981-05-04 1983-08-02 Hughes Aircraft Company Selective encapsulation, controlled atmosphere annealing for III-V semiconductor device fabrication
JPS5848968A (ja) * 1981-09-18 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS58123756A (ja) * 1982-01-19 1983-07-23 Nec Corp ガリウム砒素集積回路

Also Published As

Publication number Publication date
EP0166342A3 (en) 1986-12-30
EP0166342B1 (de) 1990-08-29
EP0166342A2 (de) 1986-01-02
JPS6118181A (ja) 1986-01-27
US4558509A (en) 1985-12-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee