DE3575049D1 - Duennschicht-heterouebergang photovoltaische cd-reiche hg1-x cdx te verwendende vorrichtungen und verfahren zur elektrodeposition dieser schichten. - Google Patents

Duennschicht-heterouebergang photovoltaische cd-reiche hg1-x cdx te verwendende vorrichtungen und verfahren zur elektrodeposition dieser schichten.

Info

Publication number
DE3575049D1
DE3575049D1 DE8585300435T DE3575049T DE3575049D1 DE 3575049 D1 DE3575049 D1 DE 3575049D1 DE 8585300435 T DE8585300435 T DE 8585300435T DE 3575049 T DE3575049 T DE 3575049T DE 3575049 D1 DE3575049 D1 DE 3575049D1
Authority
DE
Germany
Prior art keywords
cdx
electrodeposition
layers
reach
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585300435T
Other languages
English (en)
Inventor
Bulent M Basol
Tseng Eric Sheng-Fong
Lo Dennis Shih-Hao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Technology Ventures Ltd
Standard Oil Commercial Development Co
Original Assignee
BP Technology Ventures Ltd
Standard Oil Commercial Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP Technology Ventures Ltd, Standard Oil Commercial Development Co filed Critical BP Technology Ventures Ltd
Application granted granted Critical
Publication of DE3575049D1 publication Critical patent/DE3575049D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE8585300435T 1984-02-03 1985-01-23 Duennschicht-heterouebergang photovoltaische cd-reiche hg1-x cdx te verwendende vorrichtungen und verfahren zur elektrodeposition dieser schichten. Expired - Lifetime DE3575049D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/576,559 US4548681A (en) 1984-02-03 1984-02-03 Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te

Publications (1)

Publication Number Publication Date
DE3575049D1 true DE3575049D1 (de) 1990-02-01

Family

ID=24304933

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585300435T Expired - Lifetime DE3575049D1 (de) 1984-02-03 1985-01-23 Duennschicht-heterouebergang photovoltaische cd-reiche hg1-x cdx te verwendende vorrichtungen und verfahren zur elektrodeposition dieser schichten.

Country Status (15)

Country Link
US (2) US4548681A (de)
EP (1) EP0152197B1 (de)
JP (1) JPH0685444B2 (de)
AU (2) AU577343B2 (de)
BR (1) BR8500445A (de)
CA (1) CA1249361A (de)
DE (1) DE3575049D1 (de)
ES (1) ES8702518A1 (de)
HK (1) HK63190A (de)
IL (1) IL74197A (de)
IN (1) IN167111B (de)
MX (1) MX168214B (de)
NO (1) NO850389L (de)
SG (1) SG20390G (de)
ZA (1) ZA85546B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816120A (en) * 1986-05-06 1989-03-28 The Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
IN167516B (de) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
EP0248953A1 (de) * 1986-06-10 1987-12-16 The Standard Oil Company Kaskadensolarzellen
US4686323A (en) * 1986-06-30 1987-08-11 The Standard Oil Company Multiple cell, two terminal photovoltaic device employing conductively adhered cells
US4873198A (en) * 1986-10-21 1989-10-10 Ametek, Inc. Method of making photovoltaic cell with chloride dip
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4764261A (en) * 1986-10-31 1988-08-16 Stemcor Corporation Method of making improved photovoltaic heterojunction structures
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
US4950615A (en) * 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
GB9022828D0 (en) * 1990-10-19 1990-12-05 Bp Solar Ltd Electrochemical process
EP0552023B1 (de) * 1992-01-14 1997-04-02 Mitsubishi Chemical Corporation Elektroden-Struktur für Halbleiteranordnung
GB2397944B (en) * 2002-01-29 2004-12-22 Univ Sheffield Hallam Thin film photovoltaic devices and methods of making the same
US20090194156A1 (en) * 2008-02-01 2009-08-06 Grommesh Robert C Dual seal photovoltaic glazing assembly and method
US20090194147A1 (en) * 2008-02-01 2009-08-06 Cardinal Ig Company Dual seal photovoltaic assembly and method
US20090320921A1 (en) * 2008-02-01 2009-12-31 Grommesh Robert C Photovoltaic Glazing Assembly and Method
US8101039B2 (en) * 2008-04-10 2012-01-24 Cardinal Ig Company Manufacturing of photovoltaic subassemblies
ES2372355T3 (es) * 2008-04-10 2012-01-19 Cardinal Ig Company Conjuntos de acristalamiento que incorporan elementos fotovoltaicos y métodos de fabricación correspondientes.
GB0916589D0 (en) * 2009-09-22 2009-10-28 Qinetiq Ltd Improved photocell
WO2012024438A2 (en) * 2010-08-17 2012-02-23 EncoreSolar, Inc. Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing
US20170167042A1 (en) * 2015-12-14 2017-06-15 International Business Machines Corporation Selective solder plating

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3723190A (en) * 1968-10-09 1973-03-27 Honeywell Inc Process for preparing mercury cadmium telluride
GB1532616A (en) * 1976-06-08 1978-11-15 Monsolar Inc Photo-voltaic power generating means and methods
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
JPS5313382A (en) * 1976-07-22 1978-02-06 Agency Of Ind Science & Technol Manufacture of thin-film light electromotive element
GB2006268A (en) * 1977-10-14 1979-05-02 Univ Queensland Preparation of semiconductor films on electrically conductive substrates
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4243885A (en) * 1979-09-25 1981-01-06 The United States Of America As Represented By The United States Department Of Energy Cadmium telluride photovoltaic radiation detector
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition

Also Published As

Publication number Publication date
CA1249361A (en) 1989-01-24
ES540082A0 (es) 1986-12-16
ES8702518A1 (es) 1986-12-16
US4629820A (en) 1986-12-16
SG20390G (en) 1990-07-06
JPH0685444B2 (ja) 1994-10-26
EP0152197A3 (en) 1986-04-02
US4548681A (en) 1985-10-22
IL74197A (en) 1988-03-31
EP0152197B1 (de) 1989-12-27
HK63190A (en) 1990-08-24
AU3768385A (en) 1985-08-08
AU577343B2 (en) 1988-09-22
JPS60239070A (ja) 1985-11-27
AU592938B2 (en) 1990-01-25
IN167111B (de) 1990-09-01
EP0152197A2 (de) 1985-08-21
ZA85546B (en) 1986-04-30
IL74197A0 (en) 1985-04-30
BR8500445A (pt) 1985-09-17
MX168214B (es) 1993-05-12
NO850389L (no) 1985-08-05
AU2660788A (en) 1989-04-13

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