DE68905321D1 - Cer-oxyfluorid-antireflexschicht fuer photodetektoren aus ii-vi-elementen und herstellungsverfahren. - Google Patents

Cer-oxyfluorid-antireflexschicht fuer photodetektoren aus ii-vi-elementen und herstellungsverfahren.

Info

Publication number
DE68905321D1
DE68905321D1 DE8989906994T DE68905321T DE68905321D1 DE 68905321 D1 DE68905321 D1 DE 68905321D1 DE 8989906994 T DE8989906994 T DE 8989906994T DE 68905321 T DE68905321 T DE 68905321T DE 68905321 D1 DE68905321 D1 DE 68905321D1
Authority
DE
Germany
Prior art keywords
antire
oxyfluoride
cer
photodetectors
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989906994T
Other languages
English (en)
Other versions
DE68905321T2 (de
Inventor
D Schemmel
F Pellicori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Application granted granted Critical
Publication of DE68905321D1 publication Critical patent/DE68905321D1/de
Publication of DE68905321T2 publication Critical patent/DE68905321T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
DE89906994T 1988-06-02 1989-05-04 Cer-oxyfluorid-antireflexschicht für photodetektoren aus ii-vi-elementen und herstellungsverfahren. Expired - Fee Related DE68905321T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/201,670 US4936653A (en) 1988-06-02 1988-06-02 Cerium oxyfluoride antireflection coating for group II-VI photodetectors and process for forming same

Publications (2)

Publication Number Publication Date
DE68905321D1 true DE68905321D1 (de) 1993-04-15
DE68905321T2 DE68905321T2 (de) 1993-09-30

Family

ID=22746794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89906994T Expired - Fee Related DE68905321T2 (de) 1988-06-02 1989-05-04 Cer-oxyfluorid-antireflexschicht für photodetektoren aus ii-vi-elementen und herstellungsverfahren.

Country Status (6)

Country Link
US (1) US4936653A (de)
EP (1) EP0377024B1 (de)
JP (1) JPH0744284B2 (de)
DE (1) DE68905321T2 (de)
IL (1) IL90252A (de)
WO (1) WO1989012322A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208460A (en) * 1991-09-23 1993-05-04 General Electric Company Photodetector scintillator radiation imager having high efficiency light collection
US6157042A (en) * 1998-11-03 2000-12-05 Lockheed Martin Corporation Optical cavity enhancement infrared photodetector
US6460243B1 (en) * 1999-11-22 2002-10-08 International Business Machines Corporation Method of making low stress and low resistance rhodium (RH) leads
WO2001058681A1 (en) * 2000-02-11 2001-08-16 Denglas Technologies, Llc. Antireflective uv blocking multilayer coatings wherin film has cerium oxide
JP2004507881A (ja) * 2000-04-20 2004-03-11 ディジラッド・コーポレーション 低漏洩電流の裏面照射フォトダイオードの製造
US20040057142A1 (en) * 2002-07-10 2004-03-25 Denglas Technologies, L.L.C. Method of making stress-resistant anti-reflection multilayer coatings containing cerium oxide
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US8371705B2 (en) * 2008-03-11 2013-02-12 The United States Of America As Represented By The Secretary Of The Army Mirrors and methods of making same
US11572617B2 (en) * 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958042A (en) * 1971-04-05 1976-05-18 Agency Of Industrial Science & Technology Method for manufacture of reflection-proof film
US4610771A (en) * 1984-10-29 1986-09-09 Ppg Industries, Inc. Sputtered films of metal alloy oxides and method of preparation thereof
FR2577073B1 (fr) * 1985-02-06 1987-09-25 Commissariat Energie Atomique Dispositif matriciel de detection d'un rayonnement lumineux a ecrans froids individuels integres dans un substrat et son procede de fabrication
US4646120A (en) * 1985-03-21 1987-02-24 The United States Of America As Represented By The Secretary Of The Army Photodiode array
EP0241083A1 (de) * 1986-04-02 1987-10-14 Eltech Systems Corporation Verfahren zur Herstellung eines Überzugs oder eines selbsttragenden Körpers aus Ceriumoxyfluorid

Also Published As

Publication number Publication date
IL90252A (en) 1992-08-18
WO1989012322A2 (en) 1989-12-14
JPH02504574A (ja) 1990-12-20
WO1989012322A3 (en) 1990-02-22
IL90252A0 (en) 1989-12-15
US4936653A (en) 1990-06-26
DE68905321T2 (de) 1993-09-30
EP0377024A1 (de) 1990-07-11
EP0377024B1 (de) 1993-03-10
JPH0744284B2 (ja) 1995-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO., LEXINGTON, MASS., US

8339 Ceased/non-payment of the annual fee