GB2397944B - Thin film photovoltaic devices and methods of making the same - Google Patents

Thin film photovoltaic devices and methods of making the same

Info

Publication number
GB2397944B
GB2397944B GB0405707A GB0405707A GB2397944B GB 2397944 B GB2397944 B GB 2397944B GB 0405707 A GB0405707 A GB 0405707A GB 0405707 A GB0405707 A GB 0405707A GB 2397944 B GB2397944 B GB 2397944B
Authority
GB
United Kingdom
Prior art keywords
making
methods
thin film
same
photovoltaic devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0405707A
Other versions
GB0405707D0 (en
GB2397944A (en
Inventor
I M Dharmadasa
N B Chaure
A P Samantilleke
John Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sheffield Hallam University
Original Assignee
Sheffield Hallam University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sheffield Hallam University filed Critical Sheffield Hallam University
Publication of GB0405707D0 publication Critical patent/GB0405707D0/en
Publication of GB2397944A publication Critical patent/GB2397944A/en
Application granted granted Critical
Publication of GB2397944B publication Critical patent/GB2397944B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
GB0405707A 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same Expired - Fee Related GB2397944B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0202007A GB2384621B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same

Publications (3)

Publication Number Publication Date
GB0405707D0 GB0405707D0 (en) 2004-04-21
GB2397944A GB2397944A (en) 2004-08-04
GB2397944B true GB2397944B (en) 2004-12-22

Family

ID=9929948

Family Applications (4)

Application Number Title Priority Date Filing Date
GB0202007A Expired - Fee Related GB2384621B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same
GB0405707A Expired - Fee Related GB2397944B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same
GB0405718A Expired - Fee Related GB2397946B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same
GB0405710A Expired - Fee Related GB2397945B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0202007A Expired - Fee Related GB2384621B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB0405718A Expired - Fee Related GB2397946B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same
GB0405710A Expired - Fee Related GB2397945B (en) 2002-01-29 2002-01-29 Thin film photovoltaic devices and methods of making the same

Country Status (2)

Country Link
GB (4) GB2384621B (en)
WO (1) WO2003065463A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100466125C (en) * 2005-04-18 2009-03-04 中国科学院长春应用化学研究所 Electric contacting material and fapparatus of containing organic hetero junction
GB0713943D0 (en) * 2007-07-18 2007-08-29 Univ Bolton The Photovoltaic cells
US8829342B2 (en) * 2009-10-19 2014-09-09 The University Of Toledo Back contact buffer layer for thin-film solar cells
US20110265874A1 (en) * 2010-04-29 2011-11-03 Primestar Solar, Inc. Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture
US9559247B2 (en) * 2010-09-22 2017-01-31 First Solar, Inc. Photovoltaic device containing an N-type dopant source
US9231134B2 (en) * 2012-08-31 2016-01-05 First Solar, Inc. Photovoltaic devices
US8697480B1 (en) 2012-11-21 2014-04-15 First Solar, Inc. Method for treating a semiconductor
CN103077994B (en) * 2013-01-29 2015-07-01 平顶山市蓝峰科技实业有限公司 Polysilicon and cadmium telluride film double-knot solar panel and preparation process
US10355157B2 (en) 2013-11-04 2019-07-16 Columbus Photovoltaics LLC Photovoltaic cells
EP2879190A1 (en) 2013-11-29 2015-06-03 Rigas Tehniska Universitate A method for formation of a graded band gap p-n homojunction in cadmium telluride
US9548421B2 (en) 2015-04-01 2017-01-17 International Business Machines Corporation Optoelectronic devices with back contact
CN114050192B (en) * 2021-11-22 2023-04-25 乐山职业技术学院 N-type double-sided cadmium telluride solar cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
EP0274891A1 (en) * 1986-12-20 1988-07-20 Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo Process for preparing noodles and alimentary pastes and premixed flour therefor
EP0465026A2 (en) * 1990-07-02 1992-01-08 Matsushita Electric Industrial Co., Ltd. Method of manufactoring a photoelectric device made of hydrogenated amorphous silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
JPS5536950A (en) * 1978-09-05 1980-03-14 Fuji Photo Film Co Ltd Manufacturing of thin film photocell
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
EP0274891A1 (en) * 1986-12-20 1988-07-20 Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo Process for preparing noodles and alimentary pastes and premixed flour therefor
EP0465026A2 (en) * 1990-07-02 1992-01-08 Matsushita Electric Industrial Co., Ltd. Method of manufactoring a photoelectric device made of hydrogenated amorphous silicon

Also Published As

Publication number Publication date
GB2384621A (en) 2003-07-30
GB2397945B (en) 2005-05-11
GB0405707D0 (en) 2004-04-21
GB2397945A (en) 2004-08-04
GB0405718D0 (en) 2004-04-21
GB2397944A (en) 2004-08-04
WO2003065463A2 (en) 2003-08-07
GB2397946A (en) 2004-08-04
GB0405710D0 (en) 2004-04-21
GB0202007D0 (en) 2002-03-13
GB2397946B (en) 2004-12-22
GB2384621B (en) 2004-07-07
WO2003065463A3 (en) 2004-08-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130129