JPH0685444B2 - カドミウムに富んだHg▲下1−X▼Cd▲下x▼ Teの層を含む太陽電池及びその製造方法 - Google Patents
カドミウムに富んだHg▲下1−X▼Cd▲下x▼ Teの層を含む太陽電池及びその製造方法Info
- Publication number
- JPH0685444B2 JPH0685444B2 JP60016364A JP1636485A JPH0685444B2 JP H0685444 B2 JPH0685444 B2 JP H0685444B2 JP 60016364 A JP60016364 A JP 60016364A JP 1636485 A JP1636485 A JP 1636485A JP H0685444 B2 JPH0685444 B2 JP H0685444B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cadmium
- rich
- solar cell
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 23
- 229910052793 cadmium Inorganic materials 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 17
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004070 electrodeposition Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- -1 halide ions Chemical class 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001556 precipitation Methods 0.000 claims description 6
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 150000001450 anions Chemical class 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 60
- 239000010409 thin film Substances 0.000 description 18
- 229910004613 CdTe Inorganic materials 0.000 description 17
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910021607 Silver chloride Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229940075397 calomel Drugs 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 2
- 239000012154 double-distilled water Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- RCTYPNKXASFOBE-UHFFFAOYSA-M chloromercury Chemical compound [Hg]Cl RCTYPNKXASFOBE-UHFFFAOYSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02474—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Sampling And Sample Adjustment (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/576,559 US4548681A (en) | 1984-02-03 | 1984-02-03 | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
US576559 | 1995-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60239070A JPS60239070A (ja) | 1985-11-27 |
JPH0685444B2 true JPH0685444B2 (ja) | 1994-10-26 |
Family
ID=24304933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60016364A Expired - Fee Related JPH0685444B2 (ja) | 1984-02-03 | 1985-01-30 | カドミウムに富んだHg▲下1−X▼Cd▲下x▼ Teの層を含む太陽電池及びその製造方法 |
Country Status (15)
Country | Link |
---|---|
US (2) | US4548681A (de) |
EP (1) | EP0152197B1 (de) |
JP (1) | JPH0685444B2 (de) |
AU (2) | AU577343B2 (de) |
BR (1) | BR8500445A (de) |
CA (1) | CA1249361A (de) |
DE (1) | DE3575049D1 (de) |
ES (1) | ES8702518A1 (de) |
HK (1) | HK63190A (de) |
IL (1) | IL74197A (de) |
IN (1) | IN167111B (de) |
MX (1) | MX168214B (de) |
NO (1) | NO850389L (de) |
SG (1) | SG20390G (de) |
ZA (1) | ZA85546B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4816120A (en) * | 1986-05-06 | 1989-03-28 | The Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
US4909857A (en) * | 1986-05-06 | 1990-03-20 | Standard Oil Company | Electrodeposited doped II-VI semiconductor films and devices incorporating such films |
IN167516B (de) * | 1986-05-06 | 1990-11-10 | Standard Oil Co Ohio | |
EP0248953A1 (de) * | 1986-06-10 | 1987-12-16 | The Standard Oil Company | Kaskadensolarzellen |
US4686323A (en) * | 1986-06-30 | 1987-08-11 | The Standard Oil Company | Multiple cell, two terminal photovoltaic device employing conductively adhered cells |
US4873198A (en) * | 1986-10-21 | 1989-10-10 | Ametek, Inc. | Method of making photovoltaic cell with chloride dip |
US4753684A (en) * | 1986-10-31 | 1988-06-28 | The Standard Oil Company | Photovoltaic heterojunction structures |
US4764261A (en) * | 1986-10-31 | 1988-08-16 | Stemcor Corporation | Method of making improved photovoltaic heterojunction structures |
US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
US4950615A (en) * | 1989-02-06 | 1990-08-21 | International Solar Electric Technology, Inc. | Method and making group IIB metal - telluride films and solar cells |
GB9022828D0 (en) * | 1990-10-19 | 1990-12-05 | Bp Solar Ltd | Electrochemical process |
EP0552023B1 (de) * | 1992-01-14 | 1997-04-02 | Mitsubishi Chemical Corporation | Elektroden-Struktur für Halbleiteranordnung |
GB2397944B (en) * | 2002-01-29 | 2004-12-22 | Univ Sheffield Hallam | Thin film photovoltaic devices and methods of making the same |
US20090194156A1 (en) * | 2008-02-01 | 2009-08-06 | Grommesh Robert C | Dual seal photovoltaic glazing assembly and method |
US20090194147A1 (en) * | 2008-02-01 | 2009-08-06 | Cardinal Ig Company | Dual seal photovoltaic assembly and method |
US20090320921A1 (en) * | 2008-02-01 | 2009-12-31 | Grommesh Robert C | Photovoltaic Glazing Assembly and Method |
US8101039B2 (en) * | 2008-04-10 | 2012-01-24 | Cardinal Ig Company | Manufacturing of photovoltaic subassemblies |
ES2372355T3 (es) * | 2008-04-10 | 2012-01-19 | Cardinal Ig Company | Conjuntos de acristalamiento que incorporan elementos fotovoltaicos y métodos de fabricación correspondientes. |
GB0916589D0 (en) * | 2009-09-22 | 2009-10-28 | Qinetiq Ltd | Improved photocell |
WO2012024438A2 (en) * | 2010-08-17 | 2012-02-23 | EncoreSolar, Inc. | Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing |
US20170167042A1 (en) * | 2015-12-14 | 2017-06-15 | International Business Machines Corporation | Selective solder plating |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3496024A (en) * | 1961-10-09 | 1970-02-17 | Monsanto Co | Photovoltaic cell with a graded energy gap |
US3723190A (en) * | 1968-10-09 | 1973-03-27 | Honeywell Inc | Process for preparing mercury cadmium telluride |
GB1532616A (en) * | 1976-06-08 | 1978-11-15 | Monsolar Inc | Photo-voltaic power generating means and methods |
US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
JPS5313382A (en) * | 1976-07-22 | 1978-02-06 | Agency Of Ind Science & Technol | Manufacture of thin-film light electromotive element |
GB2006268A (en) * | 1977-10-14 | 1979-05-02 | Univ Queensland | Preparation of semiconductor films on electrically conductive substrates |
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
US4243885A (en) * | 1979-09-25 | 1981-01-06 | The United States Of America As Represented By The United States Department Of Energy | Cadmium telluride photovoltaic radiation detector |
US4319069A (en) * | 1980-07-25 | 1982-03-09 | Eastman Kodak Company | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
US4388483A (en) * | 1981-09-08 | 1983-06-14 | Monosolar, Inc. | Thin film heterojunction photovoltaic cells and methods of making the same |
US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
-
1984
- 1984-02-03 US US06/576,559 patent/US4548681A/en not_active Expired - Lifetime
-
1985
- 1985-01-15 AU AU37683/85A patent/AU577343B2/en not_active Expired
- 1985-01-21 CA CA000472470A patent/CA1249361A/en not_active Expired
- 1985-01-23 DE DE8585300435T patent/DE3575049D1/de not_active Expired - Lifetime
- 1985-01-23 EP EP85300435A patent/EP0152197B1/de not_active Expired
- 1985-01-23 ZA ZA85546A patent/ZA85546B/xx unknown
- 1985-01-30 IL IL74197A patent/IL74197A/xx unknown
- 1985-01-30 JP JP60016364A patent/JPH0685444B2/ja not_active Expired - Fee Related
- 1985-01-31 BR BR8500445A patent/BR8500445A/pt not_active IP Right Cessation
- 1985-02-01 NO NO850389A patent/NO850389L/no unknown
- 1985-02-01 MX MX204224A patent/MX168214B/es unknown
- 1985-02-01 ES ES540082A patent/ES8702518A1/es not_active Expired
- 1985-02-12 IN IN112/DEL/85A patent/IN167111B/en unknown
- 1985-09-17 US US06/762,474 patent/US4629820A/en not_active Expired - Lifetime
-
1988
- 1988-12-06 AU AU26607/88A patent/AU592938B2/en not_active Expired
-
1990
- 1990-03-13 SG SG203/90A patent/SG20390G/en unknown
- 1990-08-16 HK HK631/90A patent/HK63190A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA1249361A (en) | 1989-01-24 |
ES540082A0 (es) | 1986-12-16 |
ES8702518A1 (es) | 1986-12-16 |
US4629820A (en) | 1986-12-16 |
SG20390G (en) | 1990-07-06 |
EP0152197A3 (en) | 1986-04-02 |
US4548681A (en) | 1985-10-22 |
IL74197A (en) | 1988-03-31 |
EP0152197B1 (de) | 1989-12-27 |
HK63190A (en) | 1990-08-24 |
AU3768385A (en) | 1985-08-08 |
AU577343B2 (en) | 1988-09-22 |
JPS60239070A (ja) | 1985-11-27 |
AU592938B2 (en) | 1990-01-25 |
IN167111B (de) | 1990-09-01 |
EP0152197A2 (de) | 1985-08-21 |
ZA85546B (en) | 1986-04-30 |
IL74197A0 (en) | 1985-04-30 |
BR8500445A (pt) | 1985-09-17 |
DE3575049D1 (de) | 1990-02-01 |
MX168214B (es) | 1993-05-12 |
NO850389L (no) | 1985-08-05 |
AU2660788A (en) | 1989-04-13 |
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