DE3574528D1 - Diffusionsbariereschicht fuer integrierte schaltungsanordnungen. - Google Patents
Diffusionsbariereschicht fuer integrierte schaltungsanordnungen.Info
- Publication number
- DE3574528D1 DE3574528D1 DE8585903616T DE3574528T DE3574528D1 DE 3574528 D1 DE3574528 D1 DE 3574528D1 DE 8585903616 T DE8585903616 T DE 8585903616T DE 3574528 T DE3574528 T DE 3574528T DE 3574528 D1 DE3574528 D1 DE 3574528D1
- Authority
- DE
- Germany
- Prior art keywords
- barer
- diffusion
- layer
- integrated circuit
- circuit arrangements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009792 diffusion process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64445984A | 1984-08-27 | 1984-08-27 | |
| PCT/US1985/001292 WO1986001640A1 (en) | 1984-08-27 | 1985-07-03 | Diffusion barrier layer for integrated-circuit devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3574528D1 true DE3574528D1 (de) | 1990-01-04 |
Family
ID=24585000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8585903616T Expired - Fee Related DE3574528D1 (de) | 1984-08-27 | 1985-07-03 | Diffusionsbariereschicht fuer integrierte schaltungsanordnungen. |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0192646B1 (de) |
| JP (1) | JPH065733B2 (de) |
| KR (1) | KR920009916B1 (de) |
| CA (1) | CA1241457A (de) |
| DE (1) | DE3574528D1 (de) |
| ES (1) | ES8704038A1 (de) |
| IE (1) | IE56850B1 (de) |
| WO (1) | WO1986001640A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3663871D1 (en) * | 1985-04-11 | 1989-07-13 | Siemens Ag | Integrated semiconductor circuit having an aluminium or aluminium alloy contact conductor path and an intermediate tantalum silicide layer as a diffusion barrier |
| JPH081950B2 (ja) * | 1986-11-21 | 1996-01-10 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH01298765A (ja) * | 1988-05-27 | 1989-12-01 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| KR920005242A (ko) * | 1990-08-20 | 1992-03-28 | 김광호 | 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법 |
| EP0551117A2 (de) * | 1992-01-08 | 1993-07-14 | Mitsubishi Denki Kabushiki Kaisha | Hochintegrierte Schaltung sowie Verfahren zur Herstellung von einem dünnen Film und dazugehörige Einrichtung |
| US6081034A (en) * | 1992-06-12 | 2000-06-27 | Micron Technology, Inc. | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer |
| KR0147626B1 (ko) * | 1995-03-30 | 1998-11-02 | 김광호 | 타이타늄 카본 나이트라이드 게이트전극 형성방법 |
| US5663088A (en) | 1995-05-19 | 1997-09-02 | Micron Technology, Inc. | Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer |
| JP2675775B2 (ja) * | 1996-08-08 | 1997-11-12 | 株式会社東芝 | 半導体装置 |
| US5942799A (en) * | 1997-11-20 | 1999-08-24 | Novellus Systems, Inc. | Multilayer diffusion barriers |
| US6051879A (en) | 1997-12-16 | 2000-04-18 | Micron Technology, Inc. | Electrical interconnection for attachment to a substrate |
| US6534404B1 (en) | 1999-11-24 | 2003-03-18 | Novellus Systems, Inc. | Method of depositing diffusion barrier for copper interconnect in integrated circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906540A (en) * | 1973-04-02 | 1975-09-16 | Nat Semiconductor Corp | Metal-silicide Schottky diode employing an aluminum connector |
| JPS5877257A (ja) * | 1981-11-04 | 1983-05-10 | Hitachi Ltd | 超高信頼性電極 |
-
1985
- 1985-07-03 JP JP60503249A patent/JPH065733B2/ja not_active Expired - Lifetime
- 1985-07-03 DE DE8585903616T patent/DE3574528D1/de not_active Expired - Fee Related
- 1985-07-03 WO PCT/US1985/001292 patent/WO1986001640A1/en active IP Right Grant
- 1985-07-03 EP EP85903616A patent/EP0192646B1/de not_active Expired
- 1985-07-03 KR KR1019860700231A patent/KR920009916B1/ko not_active IP Right Cessation
- 1985-07-30 CA CA000487801A patent/CA1241457A/en not_active Expired
- 1985-08-23 ES ES546383A patent/ES8704038A1/es not_active Expired
- 1985-08-26 IE IE2091/85A patent/IE56850B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES8704038A1 (es) | 1987-03-01 |
| EP0192646B1 (de) | 1989-11-29 |
| ES546383A0 (es) | 1987-03-01 |
| IE852091L (en) | 1986-02-27 |
| WO1986001640A1 (en) | 1986-03-13 |
| IE56850B1 (en) | 1992-01-01 |
| KR920009916B1 (ko) | 1992-11-06 |
| EP0192646A1 (de) | 1986-09-03 |
| CA1241457A (en) | 1988-08-30 |
| JPS62500060A (ja) | 1987-01-08 |
| JPH065733B2 (ja) | 1994-01-19 |
| KR860700312A (ko) | 1986-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
| 8339 | Ceased/non-payment of the annual fee |