DE3572268D1 - Unidirectional current and bidirectional voltage semiconductor commutation device with regulated turning-off and spontaneous turning-on - Google Patents

Unidirectional current and bidirectional voltage semiconductor commutation device with regulated turning-off and spontaneous turning-on

Info

Publication number
DE3572268D1
DE3572268D1 DE8585400761T DE3572268T DE3572268D1 DE 3572268 D1 DE3572268 D1 DE 3572268D1 DE 8585400761 T DE8585400761 T DE 8585400761T DE 3572268 T DE3572268 T DE 3572268T DE 3572268 D1 DE3572268 D1 DE 3572268D1
Authority
DE
Germany
Prior art keywords
turning
semiconductor device
gate
logic
unidirectional current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585400761T
Other languages
English (en)
Inventor
Henri Foch
Jacques Duparc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeumont Schneider SA
Original Assignee
Jeumont Schneider SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeumont Schneider SA filed Critical Jeumont Schneider SA
Application granted granted Critical
Publication of DE3572268D1 publication Critical patent/DE3572268D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Thyristor Switches And Gates (AREA)
  • Led Devices (AREA)
  • Electronic Switches (AREA)
DE8585400761T 1984-04-20 1985-04-17 Unidirectional current and bidirectional voltage semiconductor commutation device with regulated turning-off and spontaneous turning-on Expired DE3572268D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8406286A FR2563393B1 (fr) 1984-04-20 1984-04-20 Ensemble de commutation a semi-conducteur monodirectionnel en courant et bidirectionnel en tension a blocage commande et a amorcage spontane et graduateur capacitif

Publications (1)

Publication Number Publication Date
DE3572268D1 true DE3572268D1 (en) 1989-09-14

Family

ID=9303360

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585400761T Expired DE3572268D1 (en) 1984-04-20 1985-04-17 Unidirectional current and bidirectional voltage semiconductor commutation device with regulated turning-off and spontaneous turning-on

Country Status (6)

Country Link
US (1) US4642553A (de)
EP (1) EP0162743B1 (de)
JP (1) JPS60235522A (de)
AT (1) ATE45447T1 (de)
DE (1) DE3572268D1 (de)
FR (1) FR2563393B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH674781A5 (de) * 1987-12-08 1990-07-13 Zellweger Uster Ag
FR2775362B1 (fr) * 1998-02-20 2001-06-29 Crouzet Automatismes Procede de gradation de la dissipation d'un signal electrique
FR2809234B1 (fr) * 2000-05-22 2002-08-02 Minarro Bernot Ind Diffusion C Thyristor dual, thyristor diode dual, thysistor, thysistor diode, convertisseur et interrupteur
RU2602368C1 (ru) * 2015-08-21 2016-11-20 Федеральное государственное бюджетное образовательное учреждение высшего образования "Юго-Западный государственный университет" (ЮЗГУ) Управляемый коммутатор элементов электрической цепи

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622806A (en) * 1969-11-13 1971-11-23 Int Rectifier Corp Dynamic gate bias for controlled rectifiers
DE2325881A1 (de) * 1973-05-22 1974-11-28 Schwenk Kg Theben Werk Verfahren und schaltungsanordnung zum ein- und ausschalten eines halbleiterschalters im nulldurchgang der betriebswechselspannung
US3992661A (en) * 1975-08-25 1976-11-16 General Electric Company Reactive current compensating apparatus for electric power systems
JPS5264651A (en) * 1975-11-20 1977-05-28 Matsushita Electric Ind Co Ltd Zero potential control circuit
JPS56121363A (en) * 1980-02-28 1981-09-24 Hitachi Ltd Gate circuit for thyristor
US4356440A (en) * 1980-09-18 1982-10-26 The Charles Stark Draper Laboratory, Inc. Power factor correction system
FR2499789A1 (fr) * 1981-02-06 1982-08-13 Thomson Csf Dispositif de commande de conduction d'un triac
JPS57162961A (en) * 1981-03-31 1982-10-06 Hitachi Ltd Gate control circuit for gate turn-off thyristor
FR2504757A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Procede et dispositif autoadaptatif d'amorcage d'un triac
US4449088A (en) * 1981-12-23 1984-05-15 General Electric Company Commutation failure correction scheme for a controlled current inverter

Also Published As

Publication number Publication date
JPS60235522A (ja) 1985-11-22
EP0162743A1 (de) 1985-11-27
ATE45447T1 (de) 1989-08-15
US4642553A (en) 1987-02-10
FR2563393B1 (fr) 1990-08-10
EP0162743B1 (de) 1989-08-09
FR2563393A1 (fr) 1985-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee