JPS5718127A - Protecting circuit of semiconductor controlling element - Google Patents

Protecting circuit of semiconductor controlling element

Info

Publication number
JPS5718127A
JPS5718127A JP9255980A JP9255980A JPS5718127A JP S5718127 A JPS5718127 A JP S5718127A JP 9255980 A JP9255980 A JP 9255980A JP 9255980 A JP9255980 A JP 9255980A JP S5718127 A JPS5718127 A JP S5718127A
Authority
JP
Japan
Prior art keywords
thyristor
main
time
reactor
conducts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9255980A
Other languages
Japanese (ja)
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP9255980A priority Critical patent/JPS5718127A/en
Publication of JPS5718127A publication Critical patent/JPS5718127A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce a switching loss and to suppress a temperature rise of a reactor, by separating the connection of a saturation reactor from a main circuit, and inserting it into a circuit containing an auxiliary thyristor for operating a main control element. CONSTITUTION:Even if a gate signal has been applied to an auxiliary thyristor 6 at time t1, a main thyristor 1 does not conduct around the time t2 when a saturable reactor 7 is saturated. At the time t2, a pulselike current iG (t) flows to a gate of the main thyristor 1 from the thyristor 6, and the thyristor 1 is ignited. When terminal voltage V1 (t) of the thyristor 1 has dropped to a low value, the thyristor 1 conducts, and also a switching loss P' (t) is greatly reduced since an overlapped portion to a terminal current i1 (t) is a little. When the thyristor 1 conducts, the thyristor 6 is biased in the reverse direction, and it is turned off.
JP9255980A 1980-07-07 1980-07-07 Protecting circuit of semiconductor controlling element Pending JPS5718127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9255980A JPS5718127A (en) 1980-07-07 1980-07-07 Protecting circuit of semiconductor controlling element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9255980A JPS5718127A (en) 1980-07-07 1980-07-07 Protecting circuit of semiconductor controlling element

Publications (1)

Publication Number Publication Date
JPS5718127A true JPS5718127A (en) 1982-01-29

Family

ID=14057771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9255980A Pending JPS5718127A (en) 1980-07-07 1980-07-07 Protecting circuit of semiconductor controlling element

Country Status (1)

Country Link
JP (1) JPS5718127A (en)

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