DE3518077A1 - Bipolarer leistungstransistor - Google Patents

Bipolarer leistungstransistor

Info

Publication number
DE3518077A1
DE3518077A1 DE19853518077 DE3518077A DE3518077A1 DE 3518077 A1 DE3518077 A1 DE 3518077A1 DE 19853518077 DE19853518077 DE 19853518077 DE 3518077 A DE3518077 A DE 3518077A DE 3518077 A1 DE3518077 A1 DE 3518077A1
Authority
DE
Germany
Prior art keywords
transistors
power transistor
elementary
base
bipolar power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19853518077
Other languages
German (de)
English (en)
Inventor
Franco Mailand/Milano Bertotti
Carlo Cornaredo Mailand/Milano Cini
Bruno Monza Mailand/Milano Murari
Flavio Dr.-Phys. Mailand/Milano Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of DE3518077A1 publication Critical patent/DE3518077A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19853518077 1984-05-21 1985-05-20 Bipolarer leistungstransistor Ceased DE3518077A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8421028A IT1213171B (it) 1984-05-21 1984-05-21 Transistore bipolare di potenza.

Publications (1)

Publication Number Publication Date
DE3518077A1 true DE3518077A1 (de) 1985-11-21

Family

ID=11175620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853518077 Ceased DE3518077A1 (de) 1984-05-21 1985-05-20 Bipolarer leistungstransistor

Country Status (7)

Country Link
US (1) US4672235A (enExample)
JP (1) JPS6134973A (enExample)
DE (1) DE3518077A1 (enExample)
FR (1) FR2564659B1 (enExample)
GB (1) GB2160357B (enExample)
IT (1) IT1213171B (enExample)
SE (1) SE501314C2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743204A1 (de) * 1986-12-30 1988-07-14 Sgs Microelettronica Spa Leistungstransistor mit verbesserter sicherheit gegen zweiten durchbruch
EP0263343A3 (en) * 1986-09-30 1989-10-11 Sgs Microelettronica S.P.A. Power transistor with self-protection against direct secondary breakdown

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1226563B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
US5546040A (en) * 1993-01-22 1996-08-13 Motorola, Inc. Power efficient transistor and method therefor
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US9195248B2 (en) * 2013-12-19 2015-11-24 Infineon Technologies Ag Fast transient response voltage regulator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1467612A (en) * 1974-04-18 1977-03-16 Philips Electronic Associated Transistor circuit
GB1600825A (en) * 1977-02-02 1981-10-21 Zaidan Hojin Handotai Kenkyu Semiconductor devices
US4423357A (en) * 1982-06-21 1983-12-27 International Business Machines Corporation Switchable precision current source

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
JPS4915849U (enExample) * 1972-05-11 1974-02-09
CH548931A (de) * 1972-06-16 1974-05-15 Sommer Rudolf Fahrbare vorrichtung zur foerderung klebrigen oder dickfluessigen foerdergutes in eine foerderleitung.
US3886466A (en) * 1973-05-24 1975-05-27 Rca Corp Bias circuitry for stacked transistor power amplifier stages
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1467612A (en) * 1974-04-18 1977-03-16 Philips Electronic Associated Transistor circuit
GB1600825A (en) * 1977-02-02 1981-10-21 Zaidan Hojin Handotai Kenkyu Semiconductor devices
US4423357A (en) * 1982-06-21 1983-12-27 International Business Machines Corporation Switchable precision current source

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Elektrotechnik 58, H. 22, 16. November 1976, S. 10-12 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0263343A3 (en) * 1986-09-30 1989-10-11 Sgs Microelettronica S.P.A. Power transistor with self-protection against direct secondary breakdown
DE3743204A1 (de) * 1986-12-30 1988-07-14 Sgs Microelettronica Spa Leistungstransistor mit verbesserter sicherheit gegen zweiten durchbruch

Also Published As

Publication number Publication date
JPH0543179B2 (enExample) 1993-06-30
US4672235A (en) 1987-06-09
GB8512836D0 (en) 1985-06-26
IT1213171B (it) 1989-12-14
SE501314C2 (sv) 1995-01-16
FR2564659B1 (fr) 1993-02-12
JPS6134973A (ja) 1986-02-19
IT8421028A0 (it) 1984-05-21
FR2564659A1 (fr) 1985-11-22
SE8502469L (sv) 1985-11-22
SE8502469D0 (sv) 1985-05-20
GB2160357A (en) 1985-12-18
GB2160357B (en) 1987-12-31

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON

8110 Request for examination paragraph 44
8131 Rejection