GB2160357B - Improvements in bipolar power transistors - Google Patents

Improvements in bipolar power transistors

Info

Publication number
GB2160357B
GB2160357B GB08512836A GB8512836A GB2160357B GB 2160357 B GB2160357 B GB 2160357B GB 08512836 A GB08512836 A GB 08512836A GB 8512836 A GB8512836 A GB 8512836A GB 2160357 B GB2160357 B GB 2160357B
Authority
GB
United Kingdom
Prior art keywords
power transistors
bipolar power
bipolar
transistors
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08512836A
Other languages
English (en)
Other versions
GB8512836D0 (en
GB2160357A (en
Inventor
Flavio Villa
Bruno Murari
Carlo Cini
Franco Bertotti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB8512836D0 publication Critical patent/GB8512836D0/en
Publication of GB2160357A publication Critical patent/GB2160357A/en
Application granted granted Critical
Publication of GB2160357B publication Critical patent/GB2160357B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB08512836A 1984-05-21 1985-05-21 Improvements in bipolar power transistors Expired GB2160357B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8421028A IT1213171B (it) 1984-05-21 1984-05-21 Transistore bipolare di potenza.

Publications (3)

Publication Number Publication Date
GB8512836D0 GB8512836D0 (en) 1985-06-26
GB2160357A GB2160357A (en) 1985-12-18
GB2160357B true GB2160357B (en) 1987-12-31

Family

ID=11175620

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08512836A Expired GB2160357B (en) 1984-05-21 1985-05-21 Improvements in bipolar power transistors

Country Status (7)

Country Link
US (1) US4672235A (enExample)
JP (1) JPS6134973A (enExample)
DE (1) DE3518077A1 (enExample)
FR (1) FR2564659B1 (enExample)
GB (1) GB2160357B (enExample)
IT (1) IT1213171B (enExample)
SE (1) SE501314C2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197307B (it) * 1986-09-30 1988-11-30 Sgs Microelettronica Spa Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
IT1226563B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
US5546040A (en) * 1993-01-22 1996-08-13 Motorola, Inc. Power efficient transistor and method therefor
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US9195248B2 (en) * 2013-12-19 2015-11-24 Infineon Technologies Ag Fast transient response voltage regulator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
JPS4915849U (enExample) * 1972-05-11 1974-02-09
CH548931A (de) * 1972-06-16 1974-05-15 Sommer Rudolf Fahrbare vorrichtung zur foerderung klebrigen oder dickfluessigen foerdergutes in eine foerderleitung.
US3886466A (en) * 1973-05-24 1975-05-27 Rca Corp Bias circuitry for stacked transistor power amplifier stages
NL7405237A (nl) * 1974-04-18 1975-10-21 Philips Nv Parallelschakelen van halfgeleidersystemen.
NL191525C (nl) * 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor
US4423357A (en) * 1982-06-21 1983-12-27 International Business Machines Corporation Switchable precision current source

Also Published As

Publication number Publication date
JPH0543179B2 (enExample) 1993-06-30
US4672235A (en) 1987-06-09
GB8512836D0 (en) 1985-06-26
IT1213171B (it) 1989-12-14
SE501314C2 (sv) 1995-01-16
FR2564659B1 (fr) 1993-02-12
JPS6134973A (ja) 1986-02-19
IT8421028A0 (it) 1984-05-21
FR2564659A1 (fr) 1985-11-22
SE8502469L (sv) 1985-11-22
SE8502469D0 (sv) 1985-05-20
GB2160357A (en) 1985-12-18
DE3518077A1 (de) 1985-11-21

Similar Documents

Publication Publication Date Title
GB8518738D0 (en) Power source
GB8416153D0 (en) Power supply
EP0171843A3 (en) Bipolar transistor rf power amplifier
EP0558100A3 (en) Bipolar transistor
GB8725631D0 (en) Bipolar transistor
GB8527616D0 (en) Power supply
ZA85607B (en) Arrangement in series of power transistors
GB8531025D0 (en) Bipolar transistor integrated circuit
GB8511381D0 (en) Power bipolar transistor
GB8408549D0 (en) Bipolar power transistor stuctures
GB2160357B (en) Improvements in bipolar power transistors
GB8514041D0 (en) Multi-cell power supply
GB2156579B (en) Field effect transistors
DE3573357D1 (en) Semiconductor power switch
GB8509635D0 (en) Power saws
GB8419954D0 (en) Power saw
GB8610314D0 (en) Bipolar transistor
GB2190790B (en) Improvements in transistors
DE3565349D1 (en) Switching power supply
GB8316559D0 (en) Bipolar transistors
GB8413726D0 (en) Transistors
GB8515723D0 (en) Utilizing tidal power
GB2154366B (en) Field effect transistors
CS598685A2 (en) Barevna obrazovka opatrena elektronovou tryskou in line
PL145024B2 (en) Power transistor contacts arrangement

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030521