FR2564659B1 - Transistor bipolaire de puissance - Google Patents

Transistor bipolaire de puissance

Info

Publication number
FR2564659B1
FR2564659B1 FR8507361A FR8507361A FR2564659B1 FR 2564659 B1 FR2564659 B1 FR 2564659B1 FR 8507361 A FR8507361 A FR 8507361A FR 8507361 A FR8507361 A FR 8507361A FR 2564659 B1 FR2564659 B1 FR 2564659B1
Authority
FR
France
Prior art keywords
power transistor
bipolar power
bipolar
transistor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8507361A
Other languages
English (en)
French (fr)
Other versions
FR2564659A1 (fr
Inventor
Flavio Villa
Bruno Murari
Carlo Cini
Franco Bertotti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2564659A1 publication Critical patent/FR2564659A1/fr
Application granted granted Critical
Publication of FR2564659B1 publication Critical patent/FR2564659B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR8507361A 1984-05-21 1985-05-15 Transistor bipolaire de puissance Expired - Fee Related FR2564659B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8421028A IT1213171B (it) 1984-05-21 1984-05-21 Transistore bipolare di potenza.

Publications (2)

Publication Number Publication Date
FR2564659A1 FR2564659A1 (fr) 1985-11-22
FR2564659B1 true FR2564659B1 (fr) 1993-02-12

Family

ID=11175620

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8507361A Expired - Fee Related FR2564659B1 (fr) 1984-05-21 1985-05-15 Transistor bipolaire de puissance

Country Status (7)

Country Link
US (1) US4672235A (enExample)
JP (1) JPS6134973A (enExample)
DE (1) DE3518077A1 (enExample)
FR (1) FR2564659B1 (enExample)
GB (1) GB2160357B (enExample)
IT (1) IT1213171B (enExample)
SE (1) SE501314C2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1197307B (it) * 1986-09-30 1988-11-30 Sgs Microelettronica Spa Transistore di potenza con comportamento migliorato e autoprotetto nei confronti della rottura secondaria diretta
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
IT1226563B (it) * 1988-07-29 1991-01-24 Sgs Thomson Microelectronics Circuito a transistor di potenza integrato comprendente mezzi per la riduzione delle sollecitazioni termiche
US5546040A (en) * 1993-01-22 1996-08-13 Motorola, Inc. Power efficient transistor and method therefor
US5373201A (en) * 1993-02-02 1994-12-13 Motorola, Inc. Power transistor
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US9195248B2 (en) * 2013-12-19 2015-11-24 Infineon Technologies Ag Fast transient response voltage regulator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
JPS4915849U (enExample) * 1972-05-11 1974-02-09
CH548931A (de) * 1972-06-16 1974-05-15 Sommer Rudolf Fahrbare vorrichtung zur foerderung klebrigen oder dickfluessigen foerdergutes in eine foerderleitung.
US3886466A (en) * 1973-05-24 1975-05-27 Rca Corp Bias circuitry for stacked transistor power amplifier stages
NL7405237A (nl) * 1974-04-18 1975-10-21 Philips Nv Parallelschakelen van halfgeleidersystemen.
NL191525C (nl) * 1977-02-02 1995-08-21 Shinkokai Zaidan Hojin Handot Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.
US4224537A (en) * 1978-11-16 1980-09-23 Motorola, Inc. Modified semiconductor temperature sensor
US4423357A (en) * 1982-06-21 1983-12-27 International Business Machines Corporation Switchable precision current source

Also Published As

Publication number Publication date
JPH0543179B2 (enExample) 1993-06-30
US4672235A (en) 1987-06-09
GB8512836D0 (en) 1985-06-26
IT1213171B (it) 1989-12-14
SE501314C2 (sv) 1995-01-16
JPS6134973A (ja) 1986-02-19
IT8421028A0 (it) 1984-05-21
FR2564659A1 (fr) 1985-11-22
SE8502469L (sv) 1985-11-22
SE8502469D0 (sv) 1985-05-20
GB2160357A (en) 1985-12-18
GB2160357B (en) 1987-12-31
DE3518077A1 (de) 1985-11-21

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Legal Events

Date Code Title Description
CD Change of name or company name
D6 Patent endorsed licences of rights
ST Notification of lapse