DE3509739A1 - Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter - Google Patents

Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter

Info

Publication number
DE3509739A1
DE3509739A1 DE19853509739 DE3509739A DE3509739A1 DE 3509739 A1 DE3509739 A1 DE 3509739A1 DE 19853509739 DE19853509739 DE 19853509739 DE 3509739 A DE3509739 A DE 3509739A DE 3509739 A1 DE3509739 A1 DE 3509739A1
Authority
DE
Germany
Prior art keywords
main group
iii
metal
epitaxial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853509739
Other languages
German (de)
English (en)
Other versions
DE3509739C2 (enExample
Inventor
T. Prof. Dr.rer.nat. Balk
Harald Dipl.-Phys. Heinecke
Meino Dipl.-Ing. Heyen
Hans Prof. Dr.rer.nat. Lüth
Norbert Prof. Dr.rer.nat. 5100 Aachen Pfütz
Markus Dipl.-Phys. 4150 Krefeld Weyers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE19853509739 priority Critical patent/DE3509739A1/de
Priority to PCT/DE1986/000116 priority patent/WO1986005524A1/de
Priority to EP86901808A priority patent/EP0215859A1/de
Publication of DE3509739A1 publication Critical patent/DE3509739A1/de
Application granted granted Critical
Publication of DE3509739C2 publication Critical patent/DE3509739C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE19853509739 1985-03-18 1985-03-18 Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter Granted DE3509739A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19853509739 DE3509739A1 (de) 1985-03-18 1985-03-18 Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter
PCT/DE1986/000116 WO1986005524A1 (fr) 1985-03-18 1986-03-18 Procede de production d'une couche epitaxiale de conductivite p a partir d'un semi-conducteur iii/v
EP86901808A EP0215859A1 (de) 1985-03-18 1986-03-18 Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853509739 DE3509739A1 (de) 1985-03-18 1985-03-18 Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter

Publications (2)

Publication Number Publication Date
DE3509739A1 true DE3509739A1 (de) 1986-09-18
DE3509739C2 DE3509739C2 (enExample) 1988-09-29

Family

ID=6265584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853509739 Granted DE3509739A1 (de) 1985-03-18 1985-03-18 Verfahren zur herstellung einer p-leitenden epitaxieschicht aus einem iii/v-halbleiter

Country Status (3)

Country Link
EP (1) EP0215859A1 (enExample)
DE (1) DE3509739A1 (enExample)
WO (1) WO1986005524A1 (enExample)

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
J.Appl.Phys. 55(8) 15.Apr. 1984, S. 3163-3165 *
J.of Crystal Growth, 55 (1981), S.30-34 *
Solid State Devices 1982, ESSDERC-SSSDT Meeting at Munich 13-16 Sept. 1952, S. 54-55 *
VLSI Fabrication Principles, Sorab K. Ghandhi, J.W.a.S., 1983, S. 257 *

Also Published As

Publication number Publication date
EP0215859A1 (de) 1987-04-01
DE3509739C2 (enExample) 1988-09-29
WO1986005524A1 (fr) 1986-09-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8181 Inventor (new situation)

Free format text: BALK, PIETER, PROF. DR.RER.NAT. HEINECKE, HARALD, DIPL.-PHYS. HEYEN, MEINO, DIPL.-ING. LUETH, HANS,PROF. DR.RER.NAT. PUETZ, NORBERT, PROF. DR.RER.NAT., 5100 AACHEN, DE WEYERS, MARKUS, DIPL.-PHYS., 4150 KREFELD, DE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee