Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
  • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
  • H10P14/3421—Arsenides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3438—Doping during depositing
  • H10P14/3441—Conductivity type
  • H10P14/3444—P-type

Definitions

• the invention relates to a method for producing a p-type epitaxial layer from a III / V semiconductor in accordance with the preamble of claim 1 and to an apparatus for carrying out the method.
• a method according to the preamble of claim 1 is from the article "Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source” by Eisuke Tokumitsu, Yoshimitsu Kudou, Makoto Konagai and Kayoshi Takahashi in Journal applied Physics 55 (8), April 15 Known in 1984.
• trimethyl gallium is used as the gallium source and hydrogen arsenic (AsH_) as the arsenic source.
• AuH_ hydrogen arsenic
• the molecular beams are evaporated by evaporating elements of III. and IV. Group generated from Knudsen cells and added as a dopant beryllium.
• the process according to the preamble of claim 1 has the advantage that the highly toxic beryllium is not used as a dopant, but on the other hand has the disadvantage that that it is not possible to realize the entire desired range of doping concentrations from about 10 14 cm-3.
• the invention is therefore based on the object of developing the method according to the preamble of patent claim 1 in such a way that doping concentrations between 10 14 cm-3 and 1020 cm-3 are specifically possible.
• organometallic compounds having the general structural formula Me (CnHx) -3 are used, where My metal of III.
• C atoms per metal atom of the third main group have as the previously used trimethyl gallium (Ga (CH ⁇ ) -.
• the metal from the V. main group can in principle be applied as desired using a molecular beam, for example arsenic can be evaporated in a Knud ⁇ en line and directed as a molecular beam onto the layer or the substrate.
• a molecular beam for example arsenic can be evaporated in a Knud ⁇ en line and directed as a molecular beam onto the layer or the substrate.
• a molecular beam of hydrides of the V. main group for example arsenic hydrogen (AsH-,) is used in addition to the molecular beam.
• the hydride be thermally decomposed by heating before it hits the substrate or the layer already applied in order to achieve sufficient growth in the order of ⁇ m / h to achieve.
• a device is therefore specified in which the molecular beams are introduced into the ultra-high vacuum recipient via capillary tubes. While the capillary tube through which the organometallic compound is passed remains at room temperature, the capillary tube through which the metal hydride, for example AsH 3 , is passed is heated to temperatures between 500 K and 850 K.
• the capillary tube through which the metal hydride, for example AsH 3 is passed is heated to temperatures between 500 K and 850 K.
• This device has the further advantage that existing UHV systems, which are set up, for example, to vaporize elements in Knudsen cells, can be easily modified so that the method according to the invention can be carried out with you. Way of carrying out the invention
• a substrate on which the layer is to be applied is arranged in an ultra-high vacuum recipient, and the recipient is evacuated and at
• the residual gas consists essentially of hydrogen and methane.
• the substrate is heated to temperatures which are customary in the epitaxial application of III / V semiconductor layers by means of molecular beams (for example 600 ° C.).
• An organometallic compound for example trithyl gallium and a metal hydride, for example arsenic hydrogen, are introduced via UHV metering valves.
• the molecular beams each consisting of the organometallic compound or the metal hydride are generated by means of quartz tubes connected to the UHV metering valves with a length of approximately 30 cm and an inner diameter of 1.5 mm. With a certain geometry of the capillary tubes, the partial pressure of the respective connection is directly proportional to the beam intensity.
• the entire length of the quartz tube through which AsH 3 is passed is provided with tantalum heating coils, by means of which the quartz tube can be heated to a temperature between approximately 500 K and 850 K, so that the arsenic hydrogen thermally decomposes before he on the substrate or the epitaxial layer strikes.
• Triethyl gallium partial pressure in the order of magnitude of a few 10 -4 Pa gives a growth of the epitaxial layer of 0.1-2 mh.
• the growth rate depends linearly on triethyl gallium feed.
• the dosage concentration is between 10 15 and 2 * 1017cm-3, and depends strictly on the equilibrium pressure of the triethyl
• Epitaxial layers mirror quality with small oval defects in the order of less than 1000 cm -3
• the mobility of the free carriers at room temperature is on the order of the values for doped LPE and MBE
• the Photoluminescenz spectrum of this low doped samples showed sharp exciton transitions with a Halb ⁇ value width of the (A C, X) transition of less than 0.5 meV.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Crystallography & Structural Chemistry (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Inorganic Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Applications Claiming Priority (2)

Publications (1)

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Family Applications (1)

Country Status (3)

• 1985
  • 1985-03-18 DE DE19853509739 patent/DE3509739A1/de active Granted
• 1986
  • 1986-03-18 WO PCT/DE1986/000116 patent/WO1986005524A1/de not_active Ceased
  • 1986-03-18 EP EP86901808A patent/EP0215859A1/de not_active Withdrawn

Non-Patent Citations (2)

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