DE3506657A1 - Photoleitfaehige vorrichtung - Google Patents

Photoleitfaehige vorrichtung

Info

Publication number
DE3506657A1
DE3506657A1 DE19853506657 DE3506657A DE3506657A1 DE 3506657 A1 DE3506657 A1 DE 3506657A1 DE 19853506657 DE19853506657 DE 19853506657 DE 3506657 A DE3506657 A DE 3506657A DE 3506657 A1 DE3506657 A1 DE 3506657A1
Authority
DE
Germany
Prior art keywords
photoconductive
layer
surface protective
photoconductive device
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853506657
Other languages
German (de)
English (en)
Other versions
DE3506657C2 (enExample
Inventor
Shoichi Yamatokoriyama Nara Nagata
Masatsugu Nara Nakamura
Kunio Ohashi
Tadashi Nara Tonegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59039147A external-priority patent/JPS60181749A/ja
Priority claimed from JP4093984A external-priority patent/JPS60184257A/ja
Priority claimed from JP4093884A external-priority patent/JPS60184256A/ja
Priority claimed from JP59042662A external-priority patent/JPS60185957A/ja
Priority claimed from JP59042663A external-priority patent/JPS60185958A/ja
Priority claimed from JP59042664A external-priority patent/JPS60185959A/ja
Priority claimed from JP59049675A external-priority patent/JPS60192954A/ja
Priority claimed from JP59049676A external-priority patent/JPS60192955A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3506657A1 publication Critical patent/DE3506657A1/de
Publication of DE3506657C2 publication Critical patent/DE3506657C2/de
Application granted granted Critical
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19853506657 1984-02-28 1985-02-26 Photoleitfaehige vorrichtung Granted DE3506657A1 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP59039147A JPS60181749A (ja) 1984-02-28 1984-02-28 光導電材
JP4093884A JPS60184256A (ja) 1984-03-02 1984-03-02 光導電材
JP4093984A JPS60184257A (ja) 1984-03-02 1984-03-02 光導電材
JP59042663A JPS60185958A (ja) 1984-03-05 1984-03-05 光導電材
JP59042664A JPS60185959A (ja) 1984-03-05 1984-03-05 光導電材
JP59042662A JPS60185957A (ja) 1984-03-05 1984-03-05 光導電材
JP59049675A JPS60192954A (ja) 1984-03-14 1984-03-14 光導電材
JP59049676A JPS60192955A (ja) 1984-03-14 1984-03-14 光導電材

Publications (2)

Publication Number Publication Date
DE3506657A1 true DE3506657A1 (de) 1985-09-05
DE3506657C2 DE3506657C2 (enExample) 1987-09-24

Family

ID=27572242

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3546544A Expired - Lifetime DE3546544C2 (enExample) 1984-02-28 1985-02-26
DE19853506657 Granted DE3506657A1 (de) 1984-02-28 1985-02-26 Photoleitfaehige vorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3546544A Expired - Lifetime DE3546544C2 (enExample) 1984-02-28 1985-02-26

Country Status (2)

Country Link
US (2) US4632894A (enExample)
DE (2) DE3546544C2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638200A1 (de) * 1985-11-11 1987-05-14 Sharp Kk Verfahren zur herstellung photoleitfaehiger bauelemente
EP0236093A1 (en) * 1986-03-03 1987-09-09 Canon Kabushiki Kaisha Light receiving member for use in electrophotography
EP0237173A1 (en) * 1986-02-07 1987-09-16 Canon Kabushiki Kaisha Light receiving member
DE3726724A1 (de) * 1986-08-11 1988-02-25 Toshiba Kk Elektrophotographisches aufzeichungsmaterial
EP0354853A3 (en) * 1988-08-12 1990-10-24 Fujitsu Limited Amorphous silicon photodiode and method of producing the same

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731314A (en) * 1985-05-07 1988-03-15 Semiconductor Energy Laboratory, Co., Ltd. Printing member for electrostatic printing having a high crystallization region of an intrinsic semiconductor layer formed by irradiation with light and method of manufacturing thereof
US4804605A (en) * 1986-08-11 1989-02-14 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
US4803141A (en) * 1986-08-11 1989-02-07 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
US4810605A (en) * 1986-10-31 1989-03-07 Kabushiki Kaisha Toshiba Electrophotographic superlattice photoreceptor
US4971878A (en) * 1988-04-04 1990-11-20 Sharp Kabushiki Kaisha Amorphous silicon photosensitive member for use in electrophotography
FR2631346B1 (fr) * 1988-05-11 1994-05-20 Air Liquide Revetement protecteur multicouche pour substrat, procede de protection de substrat par depot par plasma d'un tel revetement, revetements obtenus et leurs applications
DE4027236B4 (de) * 1989-08-31 2005-03-31 Sanyo Electric Co., Ltd., Moriguchi Verfahren zur Herstellung von Filmen aus amorphem Silicium und einen solchen Film verwendende Photohalbleiter-Vorrichtung
FR2661688B1 (fr) * 1990-05-02 1992-07-17 Air Liquide Revetement multicouche pour substrat polycarbonate et procede d'elaboration d'un tel revetement.
US5234748A (en) * 1991-06-19 1993-08-10 Ford Motor Company Anti-reflective transparent coating with gradient zone
JP2809543B2 (ja) * 1992-03-10 1998-10-08 シャープ株式会社 光導電型液晶ライトバルブ
JPH06266138A (ja) * 1993-03-15 1994-09-22 Canon Inc 電子写真装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143764A1 (de) 1981-01-08 1982-08-12 Canon K.K., Tokyo Photoleitfaehiges element
DE3211081A1 (de) * 1981-03-25 1982-11-18 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element
DE3412184A1 (de) 1983-04-01 1984-10-11 Takao Sakai Osaka Kawamura Elektrophotographisch empfindliches bauelement

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
US4409308A (en) * 1980-10-03 1983-10-11 Canon Kabuskiki Kaisha Photoconductive member with two amorphous silicon layers
US4461820A (en) * 1981-02-06 1984-07-24 Canon Kabushiki Kaisha Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate
US4426434A (en) * 1981-06-23 1984-01-17 Nippon Telegraph & Telephone Public Corp. Electrophotographic photoreceptor and preparation thereof
US4460669A (en) * 1981-11-26 1984-07-17 Canon Kabushiki Kaisha Photoconductive member with α-Si and C, U or D and dopant
US4486521A (en) * 1982-03-16 1984-12-04 Canon Kabushiki Kaisha Photoconductive member with doped and oxygen containing amorphous silicon layers
US4490454A (en) * 1982-03-17 1984-12-25 Canon Kabushiki Kaisha Photoconductive member comprising multiple amorphous layers
US4563460A (en) * 1984-01-13 1986-01-07 William H. Rorer, Inc. Quinoline and quinazoline derivatives for treating gastrointestinal motility dysfunctions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143764A1 (de) 1981-01-08 1982-08-12 Canon K.K., Tokyo Photoleitfaehiges element
DE3211081A1 (de) * 1981-03-25 1982-11-18 Kawamura, Takao, Sakai, Osaka Lichtempfindliches element
DE3412184A1 (de) 1983-04-01 1984-10-11 Takao Sakai Osaka Kawamura Elektrophotographisch empfindliches bauelement

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638200A1 (de) * 1985-11-11 1987-05-14 Sharp Kk Verfahren zur herstellung photoleitfaehiger bauelemente
EP0237173A1 (en) * 1986-02-07 1987-09-16 Canon Kabushiki Kaisha Light receiving member
EP0236093A1 (en) * 1986-03-03 1987-09-09 Canon Kabushiki Kaisha Light receiving member for use in electrophotography
DE3726724A1 (de) * 1986-08-11 1988-02-25 Toshiba Kk Elektrophotographisches aufzeichungsmaterial
EP0354853A3 (en) * 1988-08-12 1990-10-24 Fujitsu Limited Amorphous silicon photodiode and method of producing the same

Also Published As

Publication number Publication date
DE3546544C2 (enExample) 1990-02-15
US4632894A (en) 1986-12-30
US4683186A (en) 1987-07-28
DE3506657C2 (enExample) 1987-09-24

Similar Documents

Publication Publication Date Title
DE2954551C2 (enExample)
DE3316649C2 (enExample)
DE3247526C2 (de) Lichtempfindliches Aufzeichnungsmaterial
DE3116798A1 (de) Photoleitendes element
DE3506657A1 (de) Photoleitfaehige vorrichtung
DE3143764A1 (de) Photoleitfaehiges element
DE3040031A1 (de) Bilderzeugungselement fuer elektrophotographische zwecke
DE3304198C2 (enExample)
DE3151146A1 (de) Photoleitfaehiges element
DE3212184C2 (enExample)
DE3211081C2 (enExample)
DE3204004C2 (enExample)
DE3687943T2 (de) Elektrophotographisches mehrschichtiges lichtempfindliches element mit einer oberschicht aus amorphem siliziumcarbid und verfahren zu dessen herstellung.
DE3309627C2 (enExample)
DE3631345A1 (de) Lichtempfindliches element
DE3610076A1 (de) Elektrofotografisches lichtempfindliches element
DE3524967A1 (de) Lichtempfindliches element
DE3308165A1 (de) Fotoleitfaehiges aufzeichnungselement
DE3416982A1 (de) Photoleitfaehiges aufzeichnungselement
DE3346043A1 (de) Fotoleitfaehiges aufzeichnungselement
DE3719333A1 (de) Elektrophotografischer photorezeptor
DE3546314A1 (de) Photorezeptor
DE3404787A1 (de) Lichtempfindliches element
DE3600419A1 (de) Elektrofotografisches lichtempfindliches element
DE3427637A1 (de) Photorezeptor und verfahren zu seiner herstellung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3546544

Format of ref document f/p: P

Ref country code: DE

Ref document number: 3546546

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 3546546

Ref country code: DE

Ref document number: 3546544

AH Division in

Ref country code: DE

Ref document number: 3546546

Format of ref document f/p: P

Ref country code: DE

Ref document number: 3546544

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
AH Division in

Ref country code: DE

Ref document number: 3546544

Format of ref document f/p: P