DE3483966D1 - Optischer schaltspeicher mit mehreren schaltstufen, unter verwendung eines organischen materials fuer den ladungstransport. - Google Patents

Optischer schaltspeicher mit mehreren schaltstufen, unter verwendung eines organischen materials fuer den ladungstransport.

Info

Publication number
DE3483966D1
DE3483966D1 DE8484113030T DE3483966T DE3483966D1 DE 3483966 D1 DE3483966 D1 DE 3483966D1 DE 8484113030 T DE8484113030 T DE 8484113030T DE 3483966 T DE3483966 T DE 3483966T DE 3483966 D1 DE3483966 D1 DE 3483966D1
Authority
DE
Germany
Prior art keywords
organic material
optical switch
cargo transport
multiple switching
switch memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484113030T
Other languages
English (en)
Inventor
Richard Stanley Potember
Theodore Otto Poehler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Johns Hopkins University
Original Assignee
Johns Hopkins University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johns Hopkins University filed Critical Johns Hopkins University
Application granted granted Critical
Publication of DE3483966D1 publication Critical patent/DE3483966D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/72—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • G03C1/73—Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705 containing organic compounds
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/001—Electric or magnetic imagery, e.g., xerography, electrography, magnetography, etc. Process, composition, or product
    • Y10S430/10—Donor-acceptor complex photoconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE8484113030T 1984-04-25 1984-10-30 Optischer schaltspeicher mit mehreren schaltstufen, unter verwendung eines organischen materials fuer den ladungstransport. Expired - Fee Related DE3483966D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/603,717 US4663270A (en) 1984-04-25 1984-04-25 Multistate optical switching and memory using an amphoteric organic charge transfer material

Publications (1)

Publication Number Publication Date
DE3483966D1 true DE3483966D1 (de) 1991-02-21

Family

ID=24416631

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484113030T Expired - Fee Related DE3483966D1 (de) 1984-04-25 1984-10-30 Optischer schaltspeicher mit mehreren schaltstufen, unter verwendung eines organischen materials fuer den ladungstransport.

Country Status (5)

Country Link
US (1) US4663270A (de)
EP (1) EP0159397B1 (de)
JP (1) JPH07101512B2 (de)
CA (1) CA1216942A (de)
DE (1) DE3483966D1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4825408A (en) * 1984-04-25 1989-04-25 The Johns Hopkins University Multistate optical switching and memory apparatus using an amphoteric organic charge transfer material
US4684598A (en) * 1984-11-23 1987-08-04 The Johns Hopkins University Enhanced optically sensitive medium using organic charge transfer materials to provide reproducible thermal/optical erasure
DE3507379A1 (de) * 1985-03-02 1986-11-06 Basf Ag, 6700 Ludwigshafen Optisches aufzeichnungsmedium
US4871236A (en) * 1985-09-18 1989-10-03 Kabushiki Kaisha Toshiba Organic thin film display element
EP0238759B1 (de) * 1986-03-25 1992-03-11 Kabushiki Kaisha Toshiba Verfahren zum Aufzeichnen von optischer Information
JP2555048B2 (ja) * 1987-02-04 1996-11-20 株式会社日立製作所 光記録方法
EP0426717B1 (de) * 1988-07-29 1996-04-24 Riedel-De Haen Aktiengesellschaft Optische datenspeicher
US5161149A (en) * 1991-07-22 1992-11-03 The Johns Hopkins University Electron density storage device and method using STM
EP0650593B1 (de) * 1992-07-17 2003-02-26 The Penn State Research Foundation System zum feststellen von atom- oder molekularspektren und/oder damit verbundenen schwellenerscheinungen
NO301144B1 (no) * 1995-05-23 1997-09-15 Opticom As Optisk datalagring
JP2003504839A (ja) * 1999-07-01 2003-02-04 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高密度の不揮発性記憶デバイス
US6324091B1 (en) 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage
US6381169B1 (en) * 1999-07-01 2002-04-30 The Regents Of The University Of California High density non-volatile memory device
WO2002077633A1 (en) * 2001-03-23 2002-10-03 The Regents Of The University Of California Open circuit potential amperometry and voltammetry
US6795778B2 (en) * 2001-05-24 2004-09-21 Lincoln Global, Inc. System and method for facilitating welding system diagnostics
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6728129B2 (en) * 2002-02-19 2004-04-27 The Regents Of The University Of California Multistate triple-decker dyads in three distinct architectures for information storage applications
US6746971B1 (en) 2002-12-05 2004-06-08 Advanced Micro Devices, Inc. Method of forming copper sulfide for memory cell
US6770905B1 (en) 2002-12-05 2004-08-03 Advanced Micro Devices, Inc. Implantation for the formation of CuX layer in an organic memory device
US6773954B1 (en) 2002-12-05 2004-08-10 Advanced Micro Devices, Inc. Methods of forming passive layers in organic memory cells
US7482621B2 (en) * 2003-02-03 2009-01-27 The Regents Of The University Of California Rewritable nano-surface organic electrical bistable devices
US6656763B1 (en) 2003-03-10 2003-12-02 Advanced Micro Devices, Inc. Spin on polymers for organic memory devices
US6825060B1 (en) 2003-04-02 2004-11-30 Advanced Micro Devices, Inc. Photosensitive polymeric memory elements
US6977389B2 (en) * 2003-06-02 2005-12-20 Advanced Micro Devices, Inc. Planar polymer memory device
US6787458B1 (en) 2003-07-07 2004-09-07 Advanced Micro Devices, Inc. Polymer memory device formed in via opening
US6803267B1 (en) 2003-07-07 2004-10-12 Advanced Micro Devices, Inc. Silicon containing material for patterning polymeric memory element
US7259039B2 (en) * 2003-07-09 2007-08-21 Spansion Llc Memory device and methods of using and making the device
US7274035B2 (en) * 2003-09-03 2007-09-25 The Regents Of The University Of California Memory devices based on electric field programmable films
US6955939B1 (en) 2003-11-03 2005-10-18 Advanced Micro Devices, Inc. Memory element formation with photosensitive polymer dielectric
WO2005086627A2 (en) * 2003-12-03 2005-09-22 The Regents Of The University Of California Three-terminal electrical bistable devices
US7608855B2 (en) * 2004-04-02 2009-10-27 Spansion Llc Polymer dielectrics for memory element array interconnect
WO2006001923A2 (en) * 2004-05-17 2006-01-05 The Regents Of The University Of California Bistable nanoparticle- polymer composite for use in memory devices
US7554111B2 (en) * 2004-05-20 2009-06-30 The Regents Of The University Of California Nanoparticle-polymer bistable devices
US8044387B1 (en) 2004-07-07 2011-10-25 Spansion Llc Semiconductor device built on plastic substrate
AU2005302518A1 (en) * 2004-10-28 2006-05-11 The Regents Of The University Of California Organic-complex thin film for nonvolatile memory applications
US7344913B1 (en) 2005-04-06 2008-03-18 Spansion Llc Spin on memory cell active layer doped with metal ions
US20060238696A1 (en) * 2005-04-20 2006-10-26 Chien-Hui Wen Method of aligning negative dielectric anisotropic liquid crystals
US20070009821A1 (en) * 2005-07-08 2007-01-11 Charlotte Cutler Devices containing multi-bit data
US11311958B1 (en) * 2019-05-13 2022-04-26 Airgas, Inc. Digital welding and cutting efficiency analysis, process evaluation and response feedback system for process optimization

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1310812A (en) * 1969-05-28 1973-03-21 Ici Ltd Radiation sensitive materials containing nitrogeneous cationic compounds
DE2314193A1 (de) * 1972-06-01 1973-12-20 Ibm Speicheranordnung mit einem film organischen materials
US4507672A (en) * 1980-03-14 1985-03-26 The Johns Hopkins University Method of fabricating a current controlled bistable electrical organic thin film switching device
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
US4394428A (en) * 1981-09-24 1983-07-19 Eastman Kodak Company Photoconductive composition and elements comprising two different compounds having a dioxaborin nucleas on a derivative thereof
US4535042A (en) * 1983-02-24 1985-08-13 Hiroyuki Kitayama Electrophotographic photosensitive member with electron donor and acceptor layers
JPH108421A (ja) * 1996-06-20 1998-01-13 Tokai Rubber Ind Ltd 支承構造およびその施工方法

Also Published As

Publication number Publication date
EP0159397A2 (de) 1985-10-30
JPH07101512B2 (ja) 1995-11-01
US4663270A (en) 1987-05-05
EP0159397B1 (de) 1991-01-16
EP0159397A3 (en) 1987-12-16
CA1216942A (en) 1987-01-20
JPS60229249A (ja) 1985-11-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee