DE346122C - - Google Patents

Info

Publication number
DE346122C
DE346122C DENDAT346122D DE346122DA DE346122C DE 346122 C DE346122 C DE 346122C DE NDAT346122 D DENDAT346122 D DE NDAT346122D DE 346122D A DE346122D A DE 346122DA DE 346122 C DE346122 C DE 346122C
Authority
DE
Germany
Prior art keywords
nitrogen
heated
nitrides
over
hydrogen sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT346122D
Other languages
German (de)
English (en)
Publication of DE346122C publication Critical patent/DE346122C/de
Active legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0612Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with alkaline-earth metals, beryllium or magnesium
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
DENDAT346122D Active DE346122C (Direct)

Publications (1)

Publication Number Publication Date
DE346122C true DE346122C (Direct)

Family

ID=574083

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT346122D Active DE346122C (Direct)

Country Status (1)

Country Link
DE (1) DE346122C (Direct)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006360A1 (en) * 1985-04-29 1986-11-06 Battelle Development Corporation Process for preparing high purity aluminum nitride
DE19846242A1 (de) * 1998-10-08 2000-04-13 Friedrich Schiller Uni Jena Bu Verfahren zur Herstellung von Ammoniak
DE19963283B4 (de) * 1998-12-30 2006-04-06 Showa Denko K.K. Verfahren zur Herstellung eines GaN-Verbindungshalbleiters

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006360A1 (en) * 1985-04-29 1986-11-06 Battelle Development Corporation Process for preparing high purity aluminum nitride
DE19846242A1 (de) * 1998-10-08 2000-04-13 Friedrich Schiller Uni Jena Bu Verfahren zur Herstellung von Ammoniak
DE19963283B4 (de) * 1998-12-30 2006-04-06 Showa Denko K.K. Verfahren zur Herstellung eines GaN-Verbindungshalbleiters

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