DE3428564A1 - Antireflexionsueberzug fuer molybdaen - Google Patents

Antireflexionsueberzug fuer molybdaen

Info

Publication number
DE3428564A1
DE3428564A1 DE19843428564 DE3428564A DE3428564A1 DE 3428564 A1 DE3428564 A1 DE 3428564A1 DE 19843428564 DE19843428564 DE 19843428564 DE 3428564 A DE3428564 A DE 3428564A DE 3428564 A1 DE3428564 A1 DE 3428564A1
Authority
DE
Germany
Prior art keywords
layer
molybdenum
molybdenum nitride
nitride
reflections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843428564
Other languages
German (de)
English (en)
Other versions
DE3428564C2 (https=
Inventor
Dale Marius Schenectady N.Y. Brown
Manjin Jerome Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3428564A1 publication Critical patent/DE3428564A1/de
Application granted granted Critical
Publication of DE3428564C2 publication Critical patent/DE3428564C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19843428564 1983-08-22 1984-08-02 Antireflexionsueberzug fuer molybdaen Granted DE3428564A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52509083A 1983-08-22 1983-08-22

Publications (2)

Publication Number Publication Date
DE3428564A1 true DE3428564A1 (de) 1985-03-14
DE3428564C2 DE3428564C2 (https=) 1987-08-13

Family

ID=24091876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843428564 Granted DE3428564A1 (de) 1983-08-22 1984-08-02 Antireflexionsueberzug fuer molybdaen

Country Status (3)

Country Link
JP (1) JPS6076736A (https=)
DE (1) DE3428564A1 (https=)
GB (1) GB2145539B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534600A1 (de) * 1985-09-27 1987-04-02 Siemens Ag Integrierte schaltung mit elektrischen leiterbahnen und verfahren zu ihrer herstellung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2063032T3 (es) * 1987-04-24 1995-01-01 Advanced Micro Devices Inc Revestimientos antirreflexivos para utilizacion en fotolitografia.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000746A1 (de) * 1979-01-10 1980-08-14 Hitachi Ltd Verfahren zur herstellung von mikroskopischen bildern
DE3039622A1 (de) * 1979-10-25 1981-05-07 General Electric Co., Schenectady, N.Y. Leitende verbundstrukturen in integrierten schaltungen und verfahren zu ihrer herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000746A1 (de) * 1979-01-10 1980-08-14 Hitachi Ltd Verfahren zur herstellung von mikroskopischen bildern
DE3039622A1 (de) * 1979-10-25 1981-05-07 General Electric Co., Schenectady, N.Y. Leitende verbundstrukturen in integrierten schaltungen und verfahren zu ihrer herstellung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: Appl. Phys. Lett., Bd. 41, Heft 5, 1. September 1982, S. 446-448 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534600A1 (de) * 1985-09-27 1987-04-02 Siemens Ag Integrierte schaltung mit elektrischen leiterbahnen und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
GB2145539A (en) 1985-03-27
GB8416974D0 (en) 1984-08-08
JPH0367260B2 (https=) 1991-10-22
DE3428564C2 (https=) 1987-08-13
JPS6076736A (ja) 1985-05-01
GB2145539B (en) 1986-08-28

Similar Documents

Publication Publication Date Title
DE60104765T2 (de) Photomaskenrohling und Photomaske
DE60307017T2 (de) Rohling für Halbton-Phasenschiebermaske, sowie Verfahren zu seiner Herstellung
DE60104766T2 (de) Halbton-Phasenschiebermaske sowie Maskenrohling
DE69326651T2 (de) Verfahren zur Herstellung von Mustern
EP0000702B1 (de) Verfahren zur Herstellung einer fliessbeständigen Resistmaske aus strahlungsempfindlichem Resistmaterial
DE69523165T2 (de) Phasenschiebermasken-rohling und verfahren zu seiner herstellung
DE4138999C2 (de) Belichtungsverfahren für die Herstellung einer Halbleitervorrichtung
DE19525745A1 (de) Verfahren zur Bildung eines Abdeckungsmusters
DE19944039B4 (de) Verfahren zum Herstellen eines Rohlings für eine Phasenverschiebungs-Photomaske und Verfahren zum Herstellen einer Phasenverschiebungs-Photomaske
DE2550056A1 (de) Iii-v-photokathode und verfahren zu ihrer herstellung
DE2419030A1 (de) Integrierte optische vorrichtung mit lichtwellenleiter und photodetektor, sowie verfahren zu ihrer herstellung
DE3428565A1 (de) Antireflexionsueberzug fuer optische lithographie
EP0146834A2 (de) Entwickler für Positiv-Fotoresists
DE4102422A1 (de) Verfahren zur herstellung einer in mehreren ebenen angeordneten leiterstruktur einer halbleitervorrichtung
DE69723829T2 (de) Rohlinge für gedämpfte eingebettete halbton-phasenschiebermasken
DE60221204T2 (de) Methode zur Herstellung eines Rohlings für eine Phasenschiebermaske und einer Phasenschiebermaske
DE1622333A1 (de) Herstellungsverfahren fuer eine Maske zum Herstellen einer Maskierung
DE102022110190A1 (de) Leere maske und fotomaske mit dieser maske
DE69328140T2 (de) Blankophotomaske und Phasenverschiebungsmaske
DE69229987T2 (de) Röntgenstrahlmaskenstruktur und -belichtungsverfahren sowie damit hergestelltes Halbleiterbauelement und Herstellungsverfahren für die Röntgenstrahlmaskenstruktur
DE3727678A1 (de) Roentgenmaske und verfahren zur herstellung einer roentgenmaske
DE10062660B4 (de) Verfahren zur Herstellung einer Siliciumoxynitrid-ARC-Schicht über einer Halbleiterstruktur
EP0218039B1 (de) Verfahren zur Übertragung feinster Fotolackstrukturen
DE3105934A1 (de) Metallskala und verfahren zu ihrer herstellung
WO2026012852A1 (de) Verfahren zur herstellung einer wellenleiterstruktur und wellenleiterstruktur

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947 LAUDENBACH

8339 Ceased/non-payment of the annual fee