ES2063032T3 - Revestimientos antirreflexivos para utilizacion en fotolitografia. - Google Patents
Revestimientos antirreflexivos para utilizacion en fotolitografia.Info
- Publication number
- ES2063032T3 ES2063032T3 ES88303400T ES88303400T ES2063032T3 ES 2063032 T3 ES2063032 T3 ES 2063032T3 ES 88303400 T ES88303400 T ES 88303400T ES 88303400 T ES88303400 T ES 88303400T ES 2063032 T3 ES2063032 T3 ES 2063032T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- aluminum
- photoresist
- titanium
- conjunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
LA REFLEXION DE LA RADIACION OPTICA INCIDENTE (18) PROCEDENTE DE UNA CAPA DE METAL ALTAMENTE REFLECTOR (12), TAL COMO ALUMINIO O TITANIO, EN UNA CAPA DE MATERIAL FOTOENDURECIBLE (14) SE DISMINUYE INTERPONIENDO UNA CAPA DE NITRURO DE TITANIO (16) ENTRE LAS CAPAS DE METAL Y MATERIAL FOTOENDURECIBLE. EL ESPESOR DE LA CAPA DE TIN DEPENDE DELA LONGITUD DE ONDA DE LA RADIACION OPTICA UTILIZADA PARA EXPONER EL MATERIAL FOTOENDURECIBLE Y DE LAS PROPIEDADES OPTICAS DE LA CAPA DE METAL SUBYACENTE. SE PUEDE CONSEGUIR REFLECTANCIA DE MENOS QUE 2 % APROXIMADAMENTE UTILIZANDO LA CAPA DE TIN JUNTO CON AL Y MENOS QUE APROXIMADAMENTE 5 % JUNTO CON TI, DE ACUERDO CON LA INVENCION. SI QUEDA EN EL SITIO DESPUES DE DISEÑAR UNA CAPA DE AL SUBYACENTE, LA CAPA DE TIN TAMBIEN SIRVE PARA SUPRIMIR LA FORMACION DE MONTICULOS EN LA CAPA DE AL.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4240287A | 1987-04-24 | 1987-04-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2063032T3 true ES2063032T3 (es) | 1995-01-01 |
Family
ID=21921742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES88303400T Expired - Lifetime ES2063032T3 (es) | 1987-04-24 | 1988-04-15 | Revestimientos antirreflexivos para utilizacion en fotolitografia. |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0289174B1 (es) |
JP (1) | JP2517357B2 (es) |
AT (1) | ATE114061T1 (es) |
DE (1) | DE3852057T2 (es) |
ES (1) | ES2063032T3 (es) |
GR (1) | GR3014920T3 (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219788A (en) * | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US6040613A (en) * | 1996-01-19 | 2000-03-21 | Micron Technology, Inc. | Antireflective coating and wiring line stack |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596540A (ja) * | 1982-07-05 | 1984-01-13 | Toshiba Corp | 半導体装置の製造方法 |
GB2145539B (en) * | 1983-08-22 | 1986-08-28 | Gen Electric | Optical preparation of molybdenum surfaces |
JPH061764B2 (ja) * | 1985-02-14 | 1994-01-05 | 日本電信電話株式会社 | パタ−ン形成法 |
-
1988
- 1988-04-15 DE DE3852057T patent/DE3852057T2/de not_active Expired - Lifetime
- 1988-04-15 ES ES88303400T patent/ES2063032T3/es not_active Expired - Lifetime
- 1988-04-15 AT AT88303400T patent/ATE114061T1/de not_active IP Right Cessation
- 1988-04-15 EP EP88303400A patent/EP0289174B1/en not_active Expired - Lifetime
- 1988-04-20 JP JP63098038A patent/JP2517357B2/ja not_active Expired - Lifetime
-
1995
- 1995-02-01 GR GR950400184T patent/GR3014920T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
EP0289174A3 (en) | 1990-11-22 |
GR3014920T3 (en) | 1995-05-31 |
EP0289174B1 (en) | 1994-11-09 |
JPS63316053A (ja) | 1988-12-23 |
JP2517357B2 (ja) | 1996-07-24 |
EP0289174A2 (en) | 1988-11-02 |
ATE114061T1 (de) | 1994-11-15 |
DE3852057T2 (de) | 1995-05-11 |
DE3852057D1 (de) | 1994-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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