ATE114061T1 - Antireflex-belag für photolithographie. - Google Patents

Antireflex-belag für photolithographie.

Info

Publication number
ATE114061T1
ATE114061T1 AT88303400T AT88303400T ATE114061T1 AT E114061 T1 ATE114061 T1 AT E114061T1 AT 88303400 T AT88303400 T AT 88303400T AT 88303400 T AT88303400 T AT 88303400T AT E114061 T1 ATE114061 T1 AT E114061T1
Authority
AT
Austria
Prior art keywords
layer
aluminum
photoresist
titanium
conjunction
Prior art date
Application number
AT88303400T
Other languages
English (en)
Inventor
William H Arnold Iii
Mohammad Farnaam
Jack Sliwa
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21921742&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE114061(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE114061T1 publication Critical patent/ATE114061T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
AT88303400T 1987-04-24 1988-04-15 Antireflex-belag für photolithographie. ATE114061T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4240287A 1987-04-24 1987-04-24

Publications (1)

Publication Number Publication Date
ATE114061T1 true ATE114061T1 (de) 1994-11-15

Family

ID=21921742

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88303400T ATE114061T1 (de) 1987-04-24 1988-04-15 Antireflex-belag für photolithographie.

Country Status (6)

Country Link
EP (1) EP0289174B1 (de)
JP (1) JP2517357B2 (de)
AT (1) ATE114061T1 (de)
DE (1) DE3852057T2 (de)
ES (1) ES2063032T3 (de)
GR (1) GR3014920T3 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US6040613A (en) * 1996-01-19 2000-03-21 Micron Technology, Inc. Antireflective coating and wiring line stack

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596540A (ja) * 1982-07-05 1984-01-13 Toshiba Corp 半導体装置の製造方法
GB2145539B (en) * 1983-08-22 1986-08-28 Gen Electric Optical preparation of molybdenum surfaces
JPH061764B2 (ja) * 1985-02-14 1994-01-05 日本電信電話株式会社 パタ−ン形成法

Also Published As

Publication number Publication date
EP0289174A3 (en) 1990-11-22
JPS63316053A (ja) 1988-12-23
EP0289174A2 (de) 1988-11-02
DE3852057T2 (de) 1995-05-11
EP0289174B1 (de) 1994-11-09
JP2517357B2 (ja) 1996-07-24
GR3014920T3 (en) 1995-05-31
DE3852057D1 (de) 1994-12-15
ES2063032T3 (es) 1995-01-01

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee