DE3417607A1 - Verfahren zur herstellung feiner muster - Google Patents
Verfahren zur herstellung feiner musterInfo
- Publication number
- DE3417607A1 DE3417607A1 DE19843417607 DE3417607A DE3417607A1 DE 3417607 A1 DE3417607 A1 DE 3417607A1 DE 19843417607 DE19843417607 DE 19843417607 DE 3417607 A DE3417607 A DE 3417607A DE 3417607 A1 DE3417607 A1 DE 3417607A1
- Authority
- DE
- Germany
- Prior art keywords
- azidobenzal
- compound
- alkaline
- etching
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C247/00—Compounds containing azido groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58083176A JPS59208549A (ja) | 1983-05-12 | 1983-05-12 | 微細パタ−ンの製造法 |
| JP58152959A JPS6045239A (ja) | 1983-08-22 | 1983-08-22 | 微細パタ−ンの製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3417607A1 true DE3417607A1 (de) | 1984-11-15 |
| DE3417607C2 DE3417607C2 (enExample) | 1988-09-01 |
Family
ID=26424233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843417607 Granted DE3417607A1 (de) | 1983-05-12 | 1984-05-11 | Verfahren zur herstellung feiner muster |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4722883A (enExample) |
| DE (1) | DE3417607A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814382A1 (en) * | 1996-06-19 | 1997-12-29 | Printing Developments Inc | Improved photoresists and method for making printing plates |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264327A (en) * | 1988-05-26 | 1993-11-23 | Canon Kabushiki Kaisha | Method for preparing information recording medium |
| US5783367A (en) * | 1989-09-20 | 1998-07-21 | Fujitsu Limited | Process for production of semiconductor device and resist developing apparatus used therein |
| US6037085A (en) * | 1996-06-19 | 2000-03-14 | Printing Development Inc. | Photoresists and method for making printing plates |
| US5855811A (en) * | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| US6558570B2 (en) | 1998-07-01 | 2003-05-06 | Micron Technology, Inc. | Polishing slurry and method for chemical-mechanical polishing |
| US7011923B2 (en) * | 2004-04-07 | 2006-03-14 | International Business Machines Corporation | Negative photoresist and method of using thereof |
| JP5835123B2 (ja) * | 2012-06-21 | 2015-12-24 | Jsr株式会社 | パターン形成用自己組織化組成物及びパターン形成方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1597614B2 (de) * | 1967-07-07 | 1977-06-23 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliche kopiermasse |
| EP0030107A1 (en) * | 1979-11-30 | 1981-06-10 | Fujitsu Limited | Process for forming resist pattern |
| JPS5872139A (ja) * | 1981-10-26 | 1983-04-30 | Tokyo Ohka Kogyo Co Ltd | 感光性材料 |
| DE3415033A1 (de) * | 1983-04-20 | 1984-10-11 | Hitachi Chemical Co., Ltd. | 4'-azidobenzal-2-methoxyacetophenon, verfahren zu seiner herstellung und es enthaltende, photoempfindliche masse |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB763288A (en) * | 1954-06-16 | 1956-12-12 | Kodak Ltd | Improvements in photo mechanical processes and materials therefor |
| GB1375461A (enExample) * | 1972-05-05 | 1974-11-27 | ||
| US3887373A (en) * | 1973-04-11 | 1975-06-03 | Motorola Inc | Non-polluting photoresist developing process |
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
-
1984
- 1984-05-11 DE DE19843417607 patent/DE3417607A1/de active Granted
-
1986
- 1986-08-07 US US06/894,122 patent/US4722883A/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1597614B2 (de) * | 1967-07-07 | 1977-06-23 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliche kopiermasse |
| EP0030107A1 (en) * | 1979-11-30 | 1981-06-10 | Fujitsu Limited | Process for forming resist pattern |
| JPS5872139A (ja) * | 1981-10-26 | 1983-04-30 | Tokyo Ohka Kogyo Co Ltd | 感光性材料 |
| DE3415033A1 (de) * | 1983-04-20 | 1984-10-11 | Hitachi Chemical Co., Ltd. | 4'-azidobenzal-2-methoxyacetophenon, verfahren zu seiner herstellung und es enthaltende, photoempfindliche masse |
Non-Patent Citations (1)
| Title |
|---|
| IEEE Transactions on Electron Devices, Vol. ED-11, S. 1306-1311 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814382A1 (en) * | 1996-06-19 | 1997-12-29 | Printing Developments Inc | Improved photoresists and method for making printing plates |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3417607C2 (enExample) | 1988-09-01 |
| US4722883A (en) | 1988-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3636697C2 (enExample) | ||
| DE3750275T2 (de) | Lackzusammensetzung und -anwendung. | |
| EP0417556B1 (de) | Positiv-arbeitendes strahlungsempfindliches Gemisch und daraus hergestelltes Aufzeichnungsmaterial | |
| DE3415033A1 (de) | 4'-azidobenzal-2-methoxyacetophenon, verfahren zu seiner herstellung und es enthaltende, photoempfindliche masse | |
| EP0444493B1 (de) | Negativ arbeitendes strahlungsempfindliches Gemisch und daraus hergestelltes Aufzeichnungsmaterial | |
| DE2747284A1 (de) | Verfahren zum abloesen von lackschichten von substraten | |
| DE3817306C2 (de) | Polysilanverbindung und deren Verwendung als Bestandteil einer lichtempfindlichen Masse | |
| DE3720017C2 (enExample) | ||
| DE2733267C2 (de) | Photolack | |
| EP0525627B1 (de) | Oligomere Verbindungen mit säurelabilen Schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches Gemisch | |
| EP0349803B1 (de) | Strahlungshärtbares Gemisch und daraus hergestelltes strahlungsempfindliches Aufzeichnungsmaterial für hochenergetische Strahlung | |
| DE3714577C2 (enExample) | ||
| EP0301332A2 (de) | Positiv-Fotoresist-Zusammensetzungen | |
| DE3810247C2 (enExample) | ||
| DE2616992A1 (de) | Lichtempfindliches material zur herstellung von druckformen und aetzresistagen | |
| DE3626582C2 (enExample) | ||
| DE3417607C2 (enExample) | ||
| DE4207264B4 (de) | Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial | |
| DE4125258A1 (de) | Verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch | |
| EP0436174B1 (de) | Strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen | |
| EP0315748A2 (de) | Positiv arbeitendes strahlungsempfindliches Gemisch und daraus hergestelltes strahlungsempfindliches Aufzeichungsmaterial | |
| EP0355015B1 (de) | Verfahren zur Entwicklung positiv arbeitender Photoresists | |
| DE69904223T2 (de) | Wasserlösliche positiv arbeitende photoresistzusammensetzung | |
| EP0501308B1 (de) | Strahlungsempfindliche Polymere mit Naphthochinon-2-diazid-4-sulfonyl-Gruppen und deren Verwendung in einem positiv arbeitenden Aufzeichnungsmaterial | |
| DE4112970A1 (de) | Saeurespaltbare strahlungsempfindliche verbindungen, diese enthaltendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |