DE3415712C2 - - Google Patents

Info

Publication number
DE3415712C2
DE3415712C2 DE3415712A DE3415712A DE3415712C2 DE 3415712 C2 DE3415712 C2 DE 3415712C2 DE 3415712 A DE3415712 A DE 3415712A DE 3415712 A DE3415712 A DE 3415712A DE 3415712 C2 DE3415712 C2 DE 3415712C2
Authority
DE
Germany
Prior art keywords
evaporator
type
carrier substrate
mixing chamber
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3415712A
Other languages
German (de)
English (en)
Other versions
DE3415712A1 (de
Inventor
Joachim K.E. Dipl.-Phys. 7063 Welzheim De Kimmerle
Fritz Dipl.-Phys. 7128 Lauffen De Pfisterer
Hans-Werner Dipl.-Ing. 7000 Stuttgart De Schock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bloss Werner Heinz Prof Dr-Ing 7065 Winterbach De
Original Assignee
Bloss Werner Heinz Prof Dr-Ing 7065 Winterbach De
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bloss Werner Heinz Prof Dr-Ing 7065 Winterbach De filed Critical Bloss Werner Heinz Prof Dr-Ing 7065 Winterbach De
Priority to DE19843415712 priority Critical patent/DE3415712A1/de
Publication of DE3415712A1 publication Critical patent/DE3415712A1/de
Application granted granted Critical
Publication of DE3415712C2 publication Critical patent/DE3415712C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02B—INTERNAL-COMBUSTION PISTON ENGINES; COMBUSTION ENGINES IN GENERAL
    • F02B1/00—Engines characterised by fuel-air mixture compression
    • F02B1/02—Engines characterised by fuel-air mixture compression with positive ignition
    • F02B1/04—Engines characterised by fuel-air mixture compression with positive ignition with fuel-air mixture admission into cylinder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
DE19843415712 1984-04-27 1984-04-27 Duennschicht-fotoelement Granted DE3415712A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19843415712 DE3415712A1 (de) 1984-04-27 1984-04-27 Duennschicht-fotoelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19843415712 DE3415712A1 (de) 1984-04-27 1984-04-27 Duennschicht-fotoelement

Publications (2)

Publication Number Publication Date
DE3415712A1 DE3415712A1 (de) 1985-11-07
DE3415712C2 true DE3415712C2 (enFirst) 1989-01-19

Family

ID=6234506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843415712 Granted DE3415712A1 (de) 1984-04-27 1984-04-27 Duennschicht-fotoelement

Country Status (1)

Country Link
DE (1) DE3415712A1 (enFirst)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240030367A1 (en) * 2013-02-01 2024-01-25 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
JPS58106876A (ja) 1981-12-19 1983-06-25 Tokyo Denki Daigaku 光電変換素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240030367A1 (en) * 2013-02-01 2024-01-25 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
US12563857B2 (en) * 2013-02-01 2026-02-24 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing

Also Published As

Publication number Publication date
DE3415712A1 (de) 1985-11-07

Similar Documents

Publication Publication Date Title
DE19912961B4 (de) Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle
DE69232932T2 (de) Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen
DE3901042C2 (enFirst)
DE2940994C2 (enFirst)
DE2917564A1 (de) Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende
DE3210742C2 (enFirst)
DE4134261C2 (de) Verfahren zum Bilden eines Satzes von Einkristallhalbleitern auf einem bandförmigen Substrat und Verwendung des Verfahrens zur Herstellung einer Solarzelle
DE2903336C2 (de) Leuchtdioden-Anzeigeeinrichtung
DE2818261C2 (de) Verfahren zur Herstellung von Galliumarsenid-Solarzellen
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE112008003144T5 (de) Schichtstruktur von CIS Solarzelle, integrierte Struktur von CIS Dünnschichtsolarzelle sowie deren Herstellungsverfahren
DE3732418A1 (de) Halbleiter-bauelement mit einem halbleiterbereich, in dem ein bandabstand kontinuierlich abgestuft ist
DE102012103243A1 (de) Verfahren zur zeitlichen Veränderung der Laserintensität während des Ritzens einer Photovoltaikvorrichtung
DE3123234C2 (de) Verfahren zur Herstellung eines pn-Übergangs in einem Halbleitermaterial der Gruppe II-VI
DE69410137T2 (de) Verfahren zur Herstellung einer chalkopyrit-Halbleiterschicht
DE102011056911A1 (de) Integrierte Abscheidung von Dünnfilmschichten bei der Herstellung von Photovoltaikmodulen auf Basis von Cadmiumtellurid
DE2062041C3 (de) Verfahren zur Herstellung von Halbleiterübergängen durch Flüssigphasenepitaxie von festen Lösungen aus n/IV- und IV/Vl-Halbleiterverbindungen
DE3209548A1 (de) Solarzellenanordnung in duennschichtbauweise aus halbleitermaterial sowie verfahren zu ihrer herstellung
DE102012104616B4 (de) Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis
DE102014225862B4 (de) Verfahren zur Bildung einer Dünnschicht mit Gradient mittels Spraypyrolyse
DE1564356A1 (de) Verfahren zum Herstellen von photoelektrischen Zellen unter Verwendung von polykristallinen pulverfoermigen Stoffen
DE3586847T2 (de) Herstellungsverfahren eines zusammengesetzten halbleiters.
DE2949359A1 (de) Photoelement
DE955624C (de) Verfahren zur Herstellung von Halbleitereinrichtungen
DE2110961C3 (de) Verfahren zum epitaktischen Aufwachsen eines ternären III-V-Mischkristalls

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee