DE3415620C2 - - Google Patents

Info

Publication number
DE3415620C2
DE3415620C2 DE3415620A DE3415620A DE3415620C2 DE 3415620 C2 DE3415620 C2 DE 3415620C2 DE 3415620 A DE3415620 A DE 3415620A DE 3415620 A DE3415620 A DE 3415620A DE 3415620 C2 DE3415620 C2 DE 3415620C2
Authority
DE
Germany
Prior art keywords
layer
atoms
starting material
silicon
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3415620A
Other languages
German (de)
English (en)
Other versions
DE3415620A1 (de
Inventor
Kyosuke Tokio/Tokyo Jp Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3415620A1 publication Critical patent/DE3415620A1/de
Application granted granted Critical
Publication of DE3415620C2 publication Critical patent/DE3415620C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE19843415620 1983-04-28 1984-04-26 Verfahren zur herstellung eines bilderzeugungselements Granted DE3415620A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58075270A JPS59200248A (ja) 1983-04-28 1983-04-28 像形成部材の製造法

Publications (2)

Publication Number Publication Date
DE3415620A1 DE3415620A1 (de) 1984-10-31
DE3415620C2 true DE3415620C2 (https=) 1989-06-08

Family

ID=13571364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843415620 Granted DE3415620A1 (de) 1983-04-28 1984-04-26 Verfahren zur herstellung eines bilderzeugungselements

Country Status (4)

Country Link
US (1) US4568626A (https=)
JP (1) JPS59200248A (https=)
DE (1) DE3415620A1 (https=)
FR (1) FR2545233B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3942325A1 (de) * 1989-12-21 1991-06-27 Rosemount Gmbh & Co Belag fuer die oberflaeche einer analysenkuevette und verfahren zur herstellung des belags

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232909A (ja) * 1983-05-16 1984-12-27 Oki Electric Ind Co Ltd 非晶質シリコン薄膜の製造方法
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
DE3609503A1 (de) * 1985-03-22 1986-10-02 Canon K.K., Tokio/Tokyo Heizwiderstandselement und heizwiderstand unter verwendung desselben
DE3609456A1 (de) * 1985-03-23 1986-10-02 Canon K.K., Tokio/Tokyo Waermeerzeugender widerstand und waermeerzeugendes widerstandselement unter benutzung desselben
DE3609691A1 (de) * 1985-03-23 1986-10-02 Canon K.K., Tokio/Tokyo Thermischer schreibkopf
US4845513A (en) * 1985-03-23 1989-07-04 Canon Kabushiki Kaisha Thermal recording head
GB2175252B (en) * 1985-03-25 1990-09-19 Canon Kk Thermal recording head
GB2176443B (en) * 1985-06-10 1990-11-14 Canon Kk Liquid jet recording head and recording system incorporating the same
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JPH084072B2 (ja) * 1986-01-14 1996-01-17 キヤノン株式会社 堆積膜形成法
US4801474A (en) * 1986-01-14 1989-01-31 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4868014A (en) * 1986-01-14 1989-09-19 Canon Kabushiki Kaisha Method for forming thin film multi-layer structure member
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4877650A (en) * 1986-03-31 1989-10-31 Canon Kabushiki Kaisha Method for forming deposited film
JPS62228471A (ja) * 1986-03-31 1987-10-07 Canon Inc 堆積膜形成法
JPH0726382A (ja) * 1993-05-10 1995-01-27 Canon Inc 半導体膜の形成方法及び該半導体膜を有する半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
US4468443A (en) * 1981-03-12 1984-08-28 Canon Kabushiki Kaisha Process for producing photoconductive member from gaseous silicon compounds
JPS57177156A (en) * 1981-04-24 1982-10-30 Canon Inc Photoconductive material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3942325A1 (de) * 1989-12-21 1991-06-27 Rosemount Gmbh & Co Belag fuer die oberflaeche einer analysenkuevette und verfahren zur herstellung des belags

Also Published As

Publication number Publication date
DE3415620A1 (de) 1984-10-31
FR2545233B1 (fr) 1987-03-20
JPS59200248A (ja) 1984-11-13
FR2545233A1 (fr) 1984-11-02
US4568626A (en) 1986-02-04

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition