DE3382697D1 - Verfahren zur herstellung einer abhebemaske mit sauerstoffsperrschicht. - Google Patents

Verfahren zur herstellung einer abhebemaske mit sauerstoffsperrschicht.

Info

Publication number
DE3382697D1
DE3382697D1 DE8383111411T DE3382697T DE3382697D1 DE 3382697 D1 DE3382697 D1 DE 3382697D1 DE 8383111411 T DE8383111411 T DE 8383111411T DE 3382697 T DE3382697 T DE 3382697T DE 3382697 D1 DE3382697 D1 DE 3382697D1
Authority
DE
Germany
Prior art keywords
lift
mask
producing
clearing layer
oxygen clearing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383111411T
Other languages
English (en)
Inventor
Harbans Singh Sachdev
Krishna Gandhi Sachdev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3382697D1 publication Critical patent/DE3382697D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8383111411T 1982-12-23 1983-11-15 Verfahren zur herstellung einer abhebemaske mit sauerstoffsperrschicht. Expired - Lifetime DE3382697D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/452,549 US4493855A (en) 1982-12-23 1982-12-23 Use of plasma polymerized organosilicon films in fabrication of lift-off masks

Publications (1)

Publication Number Publication Date
DE3382697D1 true DE3382697D1 (de) 1993-07-22

Family

ID=23796913

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383111411T Expired - Lifetime DE3382697D1 (de) 1982-12-23 1983-11-15 Verfahren zur herstellung einer abhebemaske mit sauerstoffsperrschicht.

Country Status (4)

Country Link
US (1) US4493855A (de)
EP (1) EP0114229B1 (de)
JP (1) JPH0622219B2 (de)
DE (1) DE3382697D1 (de)

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US5208067A (en) * 1986-04-14 1993-05-04 International Business Machines Corporation Surface modification of organic materials to improve adhesion
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US4822708A (en) * 1986-08-01 1989-04-18 Minolta Camera Kabushiki Kaisha Carrier for use in developing device of electrostatic latent image and production thereof
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US5201947A (en) * 1989-09-29 1993-04-13 Ethyl Corporation Preceramic compositions and ceramic products
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
US5298587A (en) * 1992-12-21 1994-03-29 The Dow Chemical Company Protective film for articles and method
US5747119A (en) * 1993-02-05 1998-05-05 Kabushiki Kaisha Toshiba Vapor deposition method and apparatus
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
JPH0817174B2 (ja) * 1993-11-10 1996-02-21 キヤノン販売株式会社 絶縁膜の改質方法
US5550405A (en) * 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
JP2956571B2 (ja) * 1996-03-07 1999-10-04 日本電気株式会社 半導体装置
US5908319A (en) * 1996-04-24 1999-06-01 Ulvac Technologies, Inc. Cleaning and stripping of photoresist from surfaces of semiconductor wafers
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US5807787A (en) * 1996-12-02 1998-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing surface leakage current on semiconductor intergrated circuits during polyimide passivation
JP3300643B2 (ja) * 1997-09-09 2002-07-08 株式会社東芝 半導体装置の製造方法
US6430810B1 (en) * 1997-10-28 2002-08-13 Uniax Corporation Mechanical scribing methods of forming a patterned metal layer in an electronic device
US6248661B1 (en) * 1999-03-05 2001-06-19 Taiwan Semiconductor Manufacturing Company Method for monitoring bubble formation and abnormal via defects in a spin-on-glass planarization, etchback process
US6524689B1 (en) 1999-10-28 2003-02-25 Quantum Corporation Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
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US7291446B2 (en) * 2004-03-17 2007-11-06 Tokyo Electron Limited Method and system for treating a hard mask to improve etch characteristics
DE102007006640A1 (de) * 2007-02-06 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Aufbringen einer Struktur auf ein Halbleiterbauelement

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US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4018945A (en) * 1975-06-19 1977-04-19 Rca Corporation Method of making a metallized video disc having an insulating layer thereon
US4013463A (en) * 1975-08-15 1977-03-22 Leder Lewis B Photoreceptor fabrication utilizing AC ion plating
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JPS5857205B2 (ja) * 1976-02-02 1983-12-19 住友化学工業株式会社 半透膜の製造方法
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JPS53137269A (en) * 1977-03-21 1978-11-30 Nasa Oxygen afterrtreating of plastic surface having coating layer formed by plasma polymerization of sili0con containing monomor
US4137330A (en) * 1977-04-18 1979-01-30 The Firestone Tire & Rubber Company Metal salt catalyzed polymerization of (NPCl2) oligomers
US4091166A (en) * 1977-06-17 1978-05-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Boron trifluoride coatings for thermoplastic materials and method of applying same in glow discharge
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US4279723A (en) * 1978-08-18 1981-07-21 The Regents Of The University Of California Polymerization of inorganic element-containing monomers using plasma
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EP0050973B1 (de) * 1980-10-28 1986-01-22 Kabushiki Kaisha Toshiba Verfahren zur Maskierung von Halbleiteranordnungen unter Verwendung einer Polymerschicht
JPS57172741A (en) * 1981-04-17 1982-10-23 Nippon Telegr & Teleph Corp <Ntt> Method for forming insulating film for semiconductor device

Also Published As

Publication number Publication date
EP0114229A2 (de) 1984-08-01
EP0114229B1 (de) 1993-06-16
JPH0622219B2 (ja) 1994-03-23
JPS59121937A (ja) 1984-07-14
US4493855A (en) 1985-01-15
EP0114229A3 (en) 1986-08-06

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Legal Events

Date Code Title Description
8332 No legal effect for de