DE3381131D1 - Integrierte injektionslogikschaltung mit schottky-nebenschluss. - Google Patents

Integrierte injektionslogikschaltung mit schottky-nebenschluss.

Info

Publication number
DE3381131D1
DE3381131D1 DE8383400200T DE3381131T DE3381131D1 DE 3381131 D1 DE3381131 D1 DE 3381131D1 DE 8383400200 T DE8383400200 T DE 8383400200T DE 3381131 T DE3381131 T DE 3381131T DE 3381131 D1 DE3381131 D1 DE 3381131D1
Authority
DE
Germany
Prior art keywords
schottky
shutter
logic circuit
integrated injection
injection logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383400200T
Other languages
English (en)
Inventor
James M Early
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3381131D1 publication Critical patent/DE3381131D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE8383400200T 1982-02-02 1983-01-28 Integrierte injektionslogikschaltung mit schottky-nebenschluss. Expired - Lifetime DE3381131D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34525782A 1982-02-02 1982-02-02

Publications (1)

Publication Number Publication Date
DE3381131D1 true DE3381131D1 (de) 1990-02-22

Family

ID=23354242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383400200T Expired - Lifetime DE3381131D1 (de) 1982-02-02 1983-01-28 Integrierte injektionslogikschaltung mit schottky-nebenschluss.

Country Status (3)

Country Link
EP (1) EP0085624B1 (de)
JP (1) JPS58169953A (de)
DE (1) DE3381131D1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2275839A (en) * 1993-03-03 1994-09-07 Plessey Semiconductors Ltd Non-saturating logic circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52133761A (en) * 1976-05-01 1977-11-09 Fujitsu Ltd Integrated circuit
DE2648425A1 (de) * 1976-10-26 1978-04-27 Itt Ind Gmbh Deutsche Binaere logische grundschaltung

Also Published As

Publication number Publication date
EP0085624B1 (de) 1990-01-17
EP0085624A2 (de) 1983-08-10
JPS58169953A (ja) 1983-10-06
EP0085624A3 (en) 1986-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition