DE3379926D1 - Ion implanted memory cells for high density ram - Google Patents
Ion implanted memory cells for high density ramInfo
- Publication number
- DE3379926D1 DE3379926D1 DE8383400114T DE3379926T DE3379926D1 DE 3379926 D1 DE3379926 D1 DE 3379926D1 DE 8383400114 T DE8383400114 T DE 8383400114T DE 3379926 T DE3379926 T DE 3379926T DE 3379926 D1 DE3379926 D1 DE 3379926D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cells
- high density
- ion implanted
- density ram
- implanted memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/340,395 US4433471A (en) | 1982-01-18 | 1982-01-18 | Method for the formation of high density memory cells using ion implantation techniques |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3379926D1 true DE3379926D1 (en) | 1989-06-29 |
Family
ID=23333183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383400114T Expired DE3379926D1 (en) | 1982-01-18 | 1983-01-18 | Ion implanted memory cells for high density ram |
Country Status (5)
Country | Link |
---|---|
US (1) | US4433471A (de) |
EP (1) | EP0084500B1 (de) |
JP (1) | JPS58127368A (de) |
CA (1) | CA1205574A (de) |
DE (1) | DE3379926D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507848A (en) * | 1982-11-22 | 1985-04-02 | Fairchild Camera & Instrument Corporation | Control of substrate injection in lateral bipolar transistors |
JPS59162693A (ja) * | 1983-03-07 | 1984-09-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶セル |
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
US4573256A (en) * | 1983-08-26 | 1986-03-04 | International Business Machines Corporation | Method for making a high performance transistor integrated circuit |
US4669179A (en) * | 1985-11-01 | 1987-06-02 | Advanced Micro Devices, Inc. | Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions |
JPS6212999A (ja) * | 1986-07-04 | 1987-01-21 | Hitachi Ltd | 半導体メモリセル |
US4839302A (en) * | 1986-10-13 | 1989-06-13 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating bipolar semiconductor device |
US5036016A (en) * | 1989-02-21 | 1991-07-30 | Bipolar Integrated Technology, Inc. | VLSI bipolar transistor process |
US4866001A (en) * | 1988-07-01 | 1989-09-12 | Bipolar Integrated Technology, Inc. | Very large scale bipolar integrated circuit process |
JP3099349B2 (ja) * | 1989-06-29 | 2000-10-16 | 日本電気株式会社 | バイポーラ型半導体メモリの製造方法 |
US5585288A (en) * | 1990-07-16 | 1996-12-17 | Raytheon Company | Digital MMIC/analog MMIC structures and process |
US5635411A (en) * | 1991-11-12 | 1997-06-03 | Rohm Co., Ltd. | Method of making semiconductor apparatus |
US5328857A (en) * | 1992-09-25 | 1994-07-12 | Sgs-Thomson Microelectronics, Inc. | Method of forming a bilevel, self aligned, low base resistance semiconductor structure |
US5455449A (en) * | 1994-06-30 | 1995-10-03 | National Semiconductor Corporation | Offset lattice bipolar transistor architecture |
SE512813C2 (sv) * | 1997-05-23 | 2000-05-15 | Ericsson Telefon Ab L M | Förfarande för framställning av en integrerad krets innefattande en dislokationsfri kollektorplugg förbunden med en begravd kollektor i en halvledarkomponent, som är omgiven av en dislokationsfri trench samt integrerad krets framställd enligt förfarandet |
US6140694A (en) * | 1998-12-30 | 2000-10-31 | Philips Electronics North America Corporation | Field isolated integrated injection logic gate |
US9099385B2 (en) * | 2013-11-08 | 2015-08-04 | Sandisk 3D Llc | Vertical 1T-1R memory cells, memory arrays and methods of forming the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128986A (en) * | 1977-04-18 | 1978-11-10 | Toshiba Corp | Manufacture of semiconductor device |
JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
DE3274778D1 (en) * | 1981-05-11 | 1987-01-29 | Fairchild Camera Instr Co | Self-aligned lateral transistor and method of manufacture thereof |
-
1982
- 1982-01-18 US US06/340,395 patent/US4433471A/en not_active Expired - Lifetime
-
1983
- 1983-01-17 CA CA000419590A patent/CA1205574A/en not_active Expired
- 1983-01-18 DE DE8383400114T patent/DE3379926D1/de not_active Expired
- 1983-01-18 EP EP83400114A patent/EP0084500B1/de not_active Expired
- 1983-01-18 JP JP58005404A patent/JPS58127368A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS58127368A (ja) | 1983-07-29 |
US4433471A (en) | 1984-02-28 |
EP0084500A3 (en) | 1986-07-16 |
EP0084500B1 (de) | 1989-05-24 |
EP0084500A2 (de) | 1983-07-27 |
CA1205574A (en) | 1986-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB8314984D0 (en) | Electrochemical cells | |
DE3377832D1 (en) | Bipolar memory cell | |
DE3379926D1 (en) | Ion implanted memory cells for high density ram | |
JPS5730363A (en) | Memory cell | |
GB8328889D0 (en) | Grids for storage batteries | |
GB8320037D0 (en) | Electrochemical cells | |
JPS5715289A (en) | Memory cell | |
EP0095039A3 (en) | Membrane-electrolysis cell | |
GB2127614B (en) | Electrode grid for storage batteries | |
GB2119404B (en) | Anode active material and alkaline cells containing same and method for the production thereof | |
DE3375258D1 (en) | Hydrogen-bromine cell | |
GB8304289D0 (en) | Gelling agent for alkaline cells | |
DE3262652D1 (en) | Alkaline electric storage cells | |
GB8304230D0 (en) | Cell | |
GB2119162B (en) | Solid state electrochemical cell | |
GB2118763B (en) | Solid state electrochemical cell | |
IL62319A0 (en) | Improvedionic barrier for electrochemical cells | |
GB8417636D0 (en) | Ram memory cell | |
GB8327829D0 (en) | Electrochemical cell | |
DE3373494D1 (en) | Electrolytic cell | |
GB2122354B (en) | Electrochemical cells | |
GB8301291D0 (en) | Electrolytic cell | |
GB2121597B (en) | Sodium - sodium nitrate cell | |
GB2113910B (en) | One-transitor dynamic ram cells | |
GB2129197B (en) | Electric storage cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |