GB2113910B - One-transitor dynamic ram cells - Google Patents

One-transitor dynamic ram cells

Info

Publication number
GB2113910B
GB2113910B GB08235086A GB8235086A GB2113910B GB 2113910 B GB2113910 B GB 2113910B GB 08235086 A GB08235086 A GB 08235086A GB 8235086 A GB8235086 A GB 8235086A GB 2113910 B GB2113910 B GB 2113910B
Authority
GB
United Kingdom
Prior art keywords
transitor
dynamic ram
ram cells
cells
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08235086A
Other versions
GB2113910A (en
Inventor
Richard D Jolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB2113910A publication Critical patent/GB2113910A/en
Application granted granted Critical
Publication of GB2113910B publication Critical patent/GB2113910B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
GB08235086A 1982-01-25 1982-12-09 One-transitor dynamic ram cells Expired GB2113910B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34256982A 1982-01-25 1982-01-25

Publications (2)

Publication Number Publication Date
GB2113910A GB2113910A (en) 1983-08-10
GB2113910B true GB2113910B (en) 1985-08-07

Family

ID=23342389

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08235086A Expired GB2113910B (en) 1982-01-25 1982-12-09 One-transitor dynamic ram cells

Country Status (2)

Country Link
JP (1) JPS58139461A (en)
GB (1) GB2113910B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065559A (en) * 1983-09-21 1985-04-15 Hitachi Ltd Semiconductor memory
JPS616878A (en) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd Thin-film transistor and manufacture thereof
JPS61207055A (en) * 1985-03-11 1986-09-13 Nec Corp Semiconductor memory device
JPS61280651A (en) * 1985-05-24 1986-12-11 Fujitsu Ltd Semiconductor memory unit

Also Published As

Publication number Publication date
JPS58139461A (en) 1983-08-18
GB2113910A (en) 1983-08-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee