DE3377182D1 - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
DE3377182D1
DE3377182D1 DE8383302006T DE3377182T DE3377182D1 DE 3377182 D1 DE3377182 D1 DE 3377182D1 DE 8383302006 T DE8383302006 T DE 8383302006T DE 3377182 T DE3377182 T DE 3377182T DE 3377182 D1 DE3377182 D1 DE 3377182D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383302006T
Other languages
English (en)
Inventor
Toshiro Hayakawa
Nobuyuki Miyauchi
Seiki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3377182D1 publication Critical patent/DE3377182D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8383302006T 1982-07-20 1983-04-08 Semiconductor laser Expired DE3377182D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127302A JPS5917292A (ja) 1982-07-20 1982-07-20 半導体レ−ザ素子

Publications (1)

Publication Number Publication Date
DE3377182D1 true DE3377182D1 (en) 1988-07-28

Family

ID=14956588

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383302006T Expired DE3377182D1 (en) 1982-07-20 1983-04-08 Semiconductor laser

Country Status (4)

Country Link
US (1) US4592060A (de)
EP (1) EP0099616B1 (de)
JP (1) JPS5917292A (de)
DE (1) DE3377182D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031288A (ja) * 1983-07-29 1985-02-18 Sharp Corp 半導体レ−ザ素子
JPS6171690A (ja) * 1984-09-17 1986-04-12 Sharp Corp 半導体レ−ザ素子
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置
JPS6343389A (ja) * 1986-08-09 1988-02-24 Sharp Corp 外部共振器型半導体レーザ装置
JPH01291481A (ja) * 1988-05-18 1989-11-24 Sharp Corp 半導体レーザ装置
JP3461632B2 (ja) * 1995-08-28 2003-10-27 三菱電機株式会社 半導体レーザ装置
JP2001168445A (ja) * 1999-09-30 2001-06-22 Denso Corp 半導体レーザ装置
JP4565350B2 (ja) * 2007-03-22 2010-10-20 ソニー株式会社 半導体レーザ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637687A (en) * 1979-09-04 1981-04-11 Matsushita Electric Ind Co Ltd Semiconductor laser device

Also Published As

Publication number Publication date
EP0099616A2 (de) 1984-02-01
EP0099616A3 (en) 1985-05-15
US4592060A (en) 1986-05-27
JPS5917292A (ja) 1984-01-28
EP0099616B1 (de) 1988-06-22
JPS6359278B2 (de) 1988-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

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