DE3377177D1 - Electron beam exposure system - Google Patents
Electron beam exposure systemInfo
- Publication number
- DE3377177D1 DE3377177D1 DE8383305721T DE3377177T DE3377177D1 DE 3377177 D1 DE3377177 D1 DE 3377177D1 DE 8383305721 T DE8383305721 T DE 8383305721T DE 3377177 T DE3377177 T DE 3377177T DE 3377177 D1 DE3377177 D1 DE 3377177D1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- beam exposure
- exposure system
- electron
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57167919A JPS5957431A (ja) | 1982-09-27 | 1982-09-27 | 電子ビ−ム露光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3377177D1 true DE3377177D1 (en) | 1988-07-28 |
Family
ID=15858481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383305721T Expired DE3377177D1 (en) | 1982-09-27 | 1983-09-26 | Electron beam exposure system |
Country Status (4)
Country | Link |
---|---|
US (1) | US4586141A (de) |
EP (1) | EP0104922B1 (de) |
JP (1) | JPS5957431A (de) |
DE (1) | DE3377177D1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692579A (en) * | 1984-05-18 | 1987-09-08 | Hitachi, Ltd. | Electron beam lithography apparatus |
DE3428802A1 (de) * | 1984-08-04 | 1986-02-13 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zur steuerung des fokussierungszustandes eines abgelenkten elektronenstrahls |
JPS6229135A (ja) * | 1985-07-29 | 1987-02-07 | Advantest Corp | 荷電粒子ビ−ム露光方法及びこの方法を用いた荷電粒子ビ−ム露光装置 |
JPH0646550B2 (ja) * | 1985-08-19 | 1994-06-15 | 株式会社東芝 | 電子ビ−ム定位置照射制御方法および電子ビ−ム定位置照射制御装置 |
JPS6246518A (ja) * | 1985-08-23 | 1987-02-28 | Toshiba Corp | 荷電ビ−ム描画方法 |
JPH0691005B2 (ja) * | 1985-12-24 | 1994-11-14 | 株式会社東芝 | 荷電ビ−ム描画方法 |
JPS63199421A (ja) * | 1987-02-16 | 1988-08-17 | Toshiba Corp | 荷電ビ−ム描画方法 |
JPH0622195B2 (ja) * | 1987-02-26 | 1994-03-23 | 東芝機械株式会社 | 荷電ビ−ム描画装置 |
JPH0616405B2 (ja) * | 1987-09-02 | 1994-03-02 | 株式会社日立製作所 | 電子顕微鏡 |
ATE108283T1 (de) * | 1988-11-10 | 1994-07-15 | Balzers Hochvakuum | Verfahren zur steuerung der verdampfungsratenverteilung eines elektronenstrahls. |
JPH03166713A (ja) * | 1989-11-27 | 1991-07-18 | Mitsubishi Electric Corp | 電子ビーム露光方法 |
JP3043031B2 (ja) * | 1990-06-01 | 2000-05-22 | 富士通株式会社 | 露光データ作成方法,パターン露光装置及びパターン露光方法 |
US5103101A (en) * | 1991-03-04 | 1992-04-07 | Etec Systems, Inc. | Multiphase printing for E-beam lithography |
US5159201A (en) * | 1991-07-26 | 1992-10-27 | International Business Machines Corporation | Shape decompositon system and method |
US5251140A (en) * | 1991-07-26 | 1993-10-05 | International Business Machines Corporation | E-beam control data compaction system and method |
JP2501726B2 (ja) * | 1991-10-08 | 1996-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | コンピュ―タ・イメ―ジ生成装置及びデ―タ減縮方法 |
JP3212360B2 (ja) * | 1992-06-16 | 2001-09-25 | 株式会社日立製作所 | マスクの製造方法、および半導体集積回路装置の製造方法 |
EP0729642B1 (de) * | 1993-12-08 | 1997-07-02 | Leica Lithography Systems Ltd. | Verfahren zur bildung eines musters mittels elektronenstrahls |
US5506793A (en) * | 1994-01-14 | 1996-04-09 | Gerber Systems Corporation | Method and apparatus for distortion compensation in an automatic optical inspection system |
JP3512954B2 (ja) * | 1996-03-06 | 2004-03-31 | 富士通株式会社 | パターン近接効果補正方法、プログラム、及び装置 |
US6645677B1 (en) | 2000-09-18 | 2003-11-11 | Micronic Laser Systems Ab | Dual layer reticle blank and manufacturing process |
JP2004193208A (ja) * | 2002-12-09 | 2004-07-08 | Canon Inc | 情報処理装置 |
JP2007043078A (ja) * | 2005-07-04 | 2007-02-15 | Nuflare Technology Inc | 描画装置及び描画方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US31630A (en) * | 1861-03-05 | Press | ||
US3949228A (en) * | 1973-09-19 | 1976-04-06 | Ibm Corporation | Method for controlling an electron beam |
US4393312A (en) * | 1976-02-05 | 1983-07-12 | Bell Telephone Laboratories, Incorporated | Variable-spot scanning in an electron beam exposure system |
GB1605087A (en) * | 1977-05-31 | 1981-12-16 | Rikagaku Kenkyusho | Method for shaping a beam of electrically charged particles |
US4218621A (en) * | 1977-06-15 | 1980-08-19 | Vlsi Technology Research Association | Electron beam exposure apparatus |
JPS5412675A (en) * | 1977-06-30 | 1979-01-30 | Jeol Ltd | Electon beam exposure method |
US4132898A (en) * | 1977-11-01 | 1979-01-02 | Fujitsu Limited | Overlapping boundary electron exposure system method and apparatus |
US4199689A (en) * | 1977-12-21 | 1980-04-22 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam exposing method and electron beam apparatus |
DD134582A1 (de) * | 1978-01-19 | 1979-03-07 | Eberhard Hahn | Verfahren und einrichtung zur justierung einer elektronenstrahlbearbeitungsanlage |
US4243866A (en) * | 1979-01-11 | 1981-01-06 | International Business Machines Corporation | Method and apparatus for forming a variable size electron beam |
JPS5783030A (en) * | 1980-11-11 | 1982-05-24 | Fujitsu Ltd | Exposure of electron beam |
EP0053225B1 (de) * | 1980-11-28 | 1985-03-13 | International Business Machines Corporation | Elektronenstrahlsystem und Verwendungsverfahren |
US4469950A (en) * | 1982-03-04 | 1984-09-04 | Varian Associates, Inc. | Charged particle beam exposure system utilizing variable line scan |
-
1982
- 1982-09-27 JP JP57167919A patent/JPS5957431A/ja active Granted
-
1983
- 1983-09-26 DE DE8383305721T patent/DE3377177D1/de not_active Expired
- 1983-09-26 EP EP83305721A patent/EP0104922B1/de not_active Expired
- 1983-09-27 US US06/536,322 patent/US4586141A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5957431A (ja) | 1984-04-03 |
EP0104922A2 (de) | 1984-04-04 |
EP0104922B1 (de) | 1988-06-22 |
US4586141A (en) | 1986-04-29 |
EP0104922A3 (en) | 1985-11-06 |
JPH0336299B2 (de) | 1991-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |