DE3373956D1 - Electroluminescent diode having a surface emission - Google Patents

Electroluminescent diode having a surface emission

Info

Publication number
DE3373956D1
DE3373956D1 DE8383402409T DE3373956T DE3373956D1 DE 3373956 D1 DE3373956 D1 DE 3373956D1 DE 8383402409 T DE8383402409 T DE 8383402409T DE 3373956 T DE3373956 T DE 3373956T DE 3373956 D1 DE3373956 D1 DE 3373956D1
Authority
DE
Germany
Prior art keywords
surface emission
electroluminescent diode
electroluminescent
diode
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383402409T
Other languages
English (en)
Inventor
Raymond Henry
Jean-Claude Carballes
Guy Mesquida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3373956D1 publication Critical patent/DE3373956D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE8383402409T 1982-12-21 1983-12-13 Electroluminescent diode having a surface emission Expired DE3373956D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8221402A FR2538171B1 (fr) 1982-12-21 1982-12-21 Diode electroluminescente a emission de surface

Publications (1)

Publication Number Publication Date
DE3373956D1 true DE3373956D1 (en) 1987-11-05

Family

ID=9280328

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383402409T Expired DE3373956D1 (en) 1982-12-21 1983-12-13 Electroluminescent diode having a surface emission

Country Status (5)

Country Link
US (1) US4570172A (de)
EP (1) EP0114548B1 (de)
JP (1) JPS59121887A (de)
DE (1) DE3373956D1 (de)
FR (1) FR2538171B1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166186A (ja) * 1985-01-18 1986-07-26 Oki Electric Ind Co Ltd 半導体光素子
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
US5115286A (en) * 1988-08-26 1992-05-19 Hewlett-Packard Company Electro-optical device with inverted transparent substrate and method for making same
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH0760904B2 (ja) * 1990-03-19 1995-06-28 イーストマン・コダックジャパン株式会社 発光素子
DE69132764T2 (de) * 1990-11-02 2002-07-11 Daido Tokushuko K.K., Nagoya Halbleitervorrichtung mit reflektierender Schicht
JPH04186679A (ja) * 1990-11-16 1992-07-03 Daido Steel Co Ltd 発光ダイオード
JPH04258182A (ja) * 1991-02-12 1992-09-14 Mitsubishi Electric Corp 半導体発光装置
SE468410B (sv) * 1991-05-08 1993-01-11 Asea Brown Boveri Ytlysande lysdiod
KR940008562B1 (ko) * 1991-07-20 1994-09-24 삼성전자 주식회사 화합물 반도체 장치 및 그 제조방법
US5481122A (en) * 1994-07-25 1996-01-02 Industrial Technology Research Institute Surface light emitting diode with electrically conductive window layer
CN1534803B (zh) * 1996-06-26 2010-05-26 奥斯兰姆奥普托半导体股份有限两合公司 具有发光变换元件的发光半导体器件
FR2758888B1 (fr) * 1997-01-27 1999-04-23 Thomson Csf Procede de modelisation fine du fouillis de sol recu par un radar
US6064076A (en) * 1998-05-20 2000-05-16 Visual Photonics Epitaxy Co., Ltd. Light-emitting diode having a transparent substrate
TW406442B (en) * 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
DE19902750A1 (de) * 1999-01-25 2000-08-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung
US6258699B1 (en) 1999-05-10 2001-07-10 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
US6287882B1 (en) 1999-10-04 2001-09-11 Visual Photonics Epitaxy Co., Ltd. Light emitting diode with a metal-coated reflective permanent substrate and the method for manufacturing the same
JP4044261B2 (ja) * 2000-03-10 2008-02-06 株式会社東芝 半導体発光素子及びその製造方法
US6545298B2 (en) * 2000-10-26 2003-04-08 The Fox Group, Inc. Compound semiconductor rectifier device structure
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US20040227141A1 (en) * 2003-01-30 2004-11-18 Epistar Corporation Light emitting device having a high resistivity cushion layer
JP4916459B2 (ja) * 2003-06-05 2012-04-11 パナソニック株式会社 半導体発光素子の製造方法
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
US7384808B2 (en) * 2005-07-12 2008-06-10 Visual Photonics Epitaxy Co., Ltd. Fabrication method of high-brightness light emitting diode having reflective layer
US7348603B2 (en) * 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US7391059B2 (en) * 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US7388233B2 (en) * 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
TWI420693B (zh) * 2008-07-17 2013-12-21 Advanced Optoelectronic Tech 發光二極體及其製程

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3946417A (en) * 1972-06-22 1976-03-23 Ibm Corporation Minimizing cross-talk in L.E.D. arrays
GB1385634A (en) * 1973-08-21 1975-02-26 Standard Telephones Cables Ltd Gaa1as lasers
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
JPS5856963B2 (ja) * 1977-05-06 1983-12-17 三菱化成ポリテック株式会社 電子発光化合物半導体の製造方法
JPS6038036B2 (ja) * 1979-04-23 1985-08-29 松下電器産業株式会社 電場発光素子
US4280107A (en) * 1979-08-08 1981-07-21 Xerox Corporation Apertured and unapertured reflector structures for electroluminescent devices
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device
JPS57109387A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Light emitting element
GB2092370B (en) * 1981-02-03 1985-02-20 Stanley Electric Co Ltd An epitaxial wafer of compound semiconductor with light absorbing layer
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser

Also Published As

Publication number Publication date
JPS59121887A (ja) 1984-07-14
FR2538171B1 (fr) 1986-02-28
FR2538171A1 (fr) 1984-06-22
EP0114548A2 (de) 1984-08-01
US4570172A (en) 1986-02-11
EP0114548B1 (de) 1987-09-30
EP0114548A3 (en) 1984-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee