DE3373894D1 - Sic sintered body having metallized layer and production method therefor - Google Patents

Sic sintered body having metallized layer and production method therefor

Info

Publication number
DE3373894D1
DE3373894D1 DE8383303456T DE3373894T DE3373894D1 DE 3373894 D1 DE3373894 D1 DE 3373894D1 DE 8383303456 T DE8383303456 T DE 8383303456T DE 3373894 T DE3373894 T DE 3373894T DE 3373894 D1 DE3373894 D1 DE 3373894D1
Authority
DE
Germany
Prior art keywords
production method
sintered body
method therefor
metallized layer
sic sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383303456T
Other languages
German (de)
English (en)
Inventor
Hideo Suzuki
Satoshi Kokura
Osamu Asai
Kunio Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3373894D1 publication Critical patent/DE3373894D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/098—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/408—Noble metals, e.g. palladium, platina or silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Products (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
DE8383303456T 1982-06-16 1983-06-15 Sic sintered body having metallized layer and production method therefor Expired DE3373894D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57102202A JPS58223678A (ja) 1982-06-16 1982-06-16 金属化層を有するＳｉＣ焼結体とその製法

Publications (1)

Publication Number Publication Date
DE3373894D1 true DE3373894D1 (en) 1987-11-05

Family

ID=14321076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383303456T Expired DE3373894D1 (en) 1982-06-16 1983-06-15 Sic sintered body having metallized layer and production method therefor

Country Status (5)

Country Link
US (1) US4663649A (OSRAM)
EP (1) EP0097058B1 (OSRAM)
JP (1) JPS58223678A (OSRAM)
KR (1) KR840005060A (OSRAM)
DE (1) DE3373894D1 (OSRAM)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59995A (ja) * 1982-06-16 1984-01-06 富士通株式会社 銅導体多層構造体の製造方法
US4784974A (en) * 1982-08-05 1988-11-15 Olin Corporation Method of making a hermetically sealed semiconductor casing
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
EP0183016B1 (en) * 1984-10-03 1989-09-20 Sumitomo Electric Industries Limited Material for a semiconductor device and process for its manufacture
JPS61248302A (ja) * 1985-04-25 1986-11-05 株式会社日立製作所 炭化ケイ素焼結体用メタライズペ−スト
DE3784213T2 (de) * 1986-10-29 1993-06-03 Toshiba Kawasaki Kk Elektronischer apparat mit einem keramischen substrat.
US4731700A (en) * 1987-02-12 1988-03-15 Delco Electronics Corporation Semiconductor connection and crossover apparatus
US4769345A (en) * 1987-03-12 1988-09-06 Olin Corporation Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor
US5240171A (en) * 1987-05-21 1993-08-31 Lanxide Technology Company, Lp Method for surface bonding of ceramic bodies
JP2548602B2 (ja) * 1988-04-12 1996-10-30 株式会社日立製作所 半導体実装モジュール
US5041695A (en) * 1989-06-01 1991-08-20 Westinghouse Electric Corp. Co-fired ceramic package for a power circuit
US5169805A (en) * 1990-01-29 1992-12-08 International Business Machines Corporation Method of resiliently mounting an integrated circuit chip to enable conformal heat dissipation
US5057909A (en) * 1990-01-29 1991-10-15 International Business Machines Corporation Electronic device and heat sink assembly
US5365108A (en) * 1992-11-19 1994-11-15 Sundstrand Corporation Metal matrix composite semiconductor power switch assembly
TW363262B (en) * 1995-10-31 1999-07-01 Nhk Spring Co Ltd Metallic electronic component packaging arrangement
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
DE10040591C1 (de) * 2000-08-15 2001-11-08 Heraeus Gmbh W C Verfahren zur Herstellung einer Beschichtung auf einem feuerfesten Bauteil und deren Verwendung
US7211884B1 (en) 2002-01-28 2007-05-01 Pacesetter, Inc. Implantable medical device construction using a flexible substrate
US6919504B2 (en) * 2002-12-19 2005-07-19 3M Innovative Properties Company Flexible heat sink
US6705393B1 (en) * 2003-02-25 2004-03-16 Abc Taiwan Electronics Corp. Ceramic heat sink with micro-pores structure
US6849941B1 (en) * 2004-01-07 2005-02-01 Thermagon, Inc. Heat sink and heat spreader assembly
TWI449137B (zh) * 2006-03-23 2014-08-11 製陶技術創新製陶工程股份公司 構件或電路用的攜帶體
CN101687716B (zh) * 2007-04-24 2013-11-13 陶瓷技术有限责任公司 制造敷金属构件的方法、相关构件以及在敷金属过程中用于放置构件的支架
JP2009158725A (ja) * 2007-12-27 2009-07-16 Panasonic Corp 半導体装置およびダイボンド材
CN102017107B (zh) 2008-06-23 2013-05-08 松下电器产业株式会社 接合结构以及电子器件
US10406774B2 (en) * 2016-10-17 2019-09-10 U.S. Department Of Energy Diffusion bonding of silicon carbide using iridium and hermetic silicon carbide-iridium bonds
JP7148276B2 (ja) * 2018-05-30 2022-10-05 京セラ株式会社 発光素子搭載用パッケージおよび発光装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA615175A (en) * 1961-02-21 J. Kroko Leonard Fused junctions in silicon carbide
NL104185C (OSRAM) * 1957-08-16
NL230857A (OSRAM) * 1958-08-26
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
JPS53130714A (en) * 1977-04-20 1978-11-15 Kogyo Gijutsuin Method of bonding nitride base ceramics and silver
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
EP0028802B1 (en) * 1979-11-05 1983-08-17 Hitachi, Ltd. Electrically insulating substrate and a method of making such a substrate
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板

Also Published As

Publication number Publication date
EP0097058A3 (en) 1984-10-03
EP0097058A2 (en) 1983-12-28
EP0097058B1 (en) 1987-09-30
US4663649A (en) 1987-05-05
KR840005060A (ko) 1984-11-03
JPS58223678A (ja) 1983-12-26
JPS6230159B2 (OSRAM) 1987-06-30

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Legal Events

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8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee