DE3337484C2 - - Google Patents
Info
- Publication number
- DE3337484C2 DE3337484C2 DE3337484A DE3337484A DE3337484C2 DE 3337484 C2 DE3337484 C2 DE 3337484C2 DE 3337484 A DE3337484 A DE 3337484A DE 3337484 A DE3337484 A DE 3337484A DE 3337484 C2 DE3337484 C2 DE 3337484C2
- Authority
- DE
- Germany
- Prior art keywords
- field
- image recording
- memory
- columns
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 102
- 238000012546 transfer Methods 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57181809A JPS5969965A (ja) | 1982-10-15 | 1982-10-15 | フレ−ム・トランスフア−型撮像素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3337484A1 DE3337484A1 (de) | 1984-04-19 |
| DE3337484C2 true DE3337484C2 (en, 2012) | 1989-11-16 |
Family
ID=16107214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833337484 Granted DE3337484A1 (de) | 1982-10-15 | 1983-10-14 | Bildaufnahmeanordnung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4635122A (en, 2012) |
| JP (1) | JPS5969965A (en, 2012) |
| DE (1) | DE3337484A1 (en, 2012) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070406A (en) * | 1983-12-24 | 1991-12-03 | Canon Kabushiki Kaisha | Image sensing apparatus having a low-resolution monitor, means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes |
| US4928137A (en) * | 1983-12-24 | 1990-05-22 | Canon Kabushiki Kaisha | Image sensing apparatus having a low-resolution monitor means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes |
| US4740828A (en) * | 1983-12-24 | 1988-04-26 | Canon Kabushiki Kaisha | Image sensing apparatus having a low-resolution monitor, means for reducing the amount of information in an image signal, and switching means for reducing power consumption in various operating modes |
| JP2566217B2 (ja) * | 1984-09-17 | 1996-12-25 | オリンパス光学工業株式会社 | 電子シヤッタ−装置 |
| JPS61133782A (ja) * | 1984-12-03 | 1986-06-21 | Nippon Hoso Kyokai <Nhk> | 固体撮像装置 |
| JP2517544B2 (ja) * | 1985-07-08 | 1996-07-24 | キヤノン株式会社 | 撮像装置 |
| FR2593986B1 (fr) * | 1986-01-24 | 1988-04-08 | Thomson Csf | Systeme de lecture rapide d'un capteur optique matriciel a transfert de charges organise en transfert de trame monocoup pour la detection video d'images breves |
| JPH0644823B2 (ja) * | 1986-08-22 | 1994-06-08 | 日本ビクター株式会社 | 固体撮像装置 |
| US4972254A (en) * | 1987-02-24 | 1990-11-20 | Kabushiki Kaisha Toshiba | Solid state image sensors for reproducing high definition images |
| JP2614263B2 (ja) * | 1987-04-10 | 1997-05-28 | 株式会社東芝 | 固体撮像素子カメラ |
| US4878121A (en) * | 1987-07-09 | 1989-10-31 | Texas Instruments Incorporated | Image sensor array for still camera imaging with multiplexer for separating interlaced fields |
| JPH01253372A (ja) * | 1988-04-01 | 1989-10-09 | Victor Co Of Japan Ltd | テレビジョンカメラ |
| US5043821A (en) * | 1988-08-31 | 1991-08-27 | Canon Kabushiki Kaisha | Image pickup device having a frame-size memory |
| US4879601A (en) * | 1988-11-14 | 1989-11-07 | Polaroid Corporation | System and method of providing images from solid state sensor |
| EP0372514B1 (en) * | 1988-12-06 | 1997-03-05 | Canon Kabushiki Kaisha | Image pick-up system |
| JP2736121B2 (ja) * | 1989-07-12 | 1998-04-02 | 株式会社東芝 | 電荷転送装置及び固体撮像装置 |
| US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
| JP2760656B2 (ja) * | 1990-11-30 | 1998-06-04 | 株式会社東芝 | 固体撮像装置 |
| EP0523781B1 (en) * | 1991-07-15 | 1998-06-10 | Koninklijke Philips Electronics N.V. | Charge-coupled imaging device |
| JPH09246519A (ja) * | 1996-03-14 | 1997-09-19 | Sony Corp | 固体撮像装置およびその駆動方法 |
| EP0969674A3 (en) * | 1998-07-03 | 2004-01-02 | Canon Kabushiki Kaisha | Image sensing device processing image signals in blocks |
| JP2000164848A (ja) * | 1998-11-27 | 2000-06-16 | Sony Corp | 固体撮像装置及びその駆動方法 |
| US6392260B1 (en) | 1999-04-29 | 2002-05-21 | Dalsa, Inc. | Architecture for a tapped CCD array |
| US20070134303A1 (en) * | 2005-12-14 | 2007-06-14 | Ali Yahiaoui | Protective and therapeutic article |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7904654A (nl) * | 1979-06-14 | 1980-12-16 | Philips Nv | Televisie opneempaneel. |
| JPS6041510B2 (ja) * | 1980-03-11 | 1985-09-17 | 日本電気株式会社 | 固体撮像板 |
| JPS57104377A (en) * | 1980-12-19 | 1982-06-29 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS57136873A (en) * | 1981-02-18 | 1982-08-24 | Matsushita Electric Ind Co Ltd | Charge-transfer type solid-state image pickup device |
| US4496982A (en) * | 1982-05-27 | 1985-01-29 | Rca Corporation | Compensation against field shading in video from field-transfer CCD imagers |
| GB2122833B (en) * | 1982-06-24 | 1985-06-26 | Ferranti Plc | Radiation detecting apparatus |
| US4513313A (en) * | 1982-12-07 | 1985-04-23 | Canon Kabushiki Kaisha | Solid state imaging device |
-
1982
- 1982-10-15 JP JP57181809A patent/JPS5969965A/ja active Granted
-
1983
- 1983-10-14 DE DE19833337484 patent/DE3337484A1/de active Granted
-
1986
- 1986-03-17 US US06/842,742 patent/US4635122A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4635122A (en) | 1987-01-06 |
| DE3337484A1 (de) | 1984-04-19 |
| JPS5969965A (ja) | 1984-04-20 |
| JPH0416949B2 (en, 2012) | 1992-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |