DE3437561C2 - - Google Patents

Info

Publication number
DE3437561C2
DE3437561C2 DE3437561A DE3437561A DE3437561C2 DE 3437561 C2 DE3437561 C2 DE 3437561C2 DE 3437561 A DE3437561 A DE 3437561A DE 3437561 A DE3437561 A DE 3437561A DE 3437561 C2 DE3437561 C2 DE 3437561C2
Authority
DE
Germany
Prior art keywords
image recording
color
image
transmission
horizontal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3437561A
Other languages
German (de)
English (en)
Other versions
DE3437561A1 (de
Inventor
Takao Tokio/Tokyo Jp Kinoshita
Shinji Yokohama Kanagawa Jp Sakai
Yoshitake Chigasaki Kanagawa Jp Nagashima
Seiji Hashimoto
Akira Yokohama Kanagawa Jp Suga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58191404A external-priority patent/JPS6083485A/ja
Priority claimed from JP58197752A external-priority patent/JPS6089177A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3437561A1 publication Critical patent/DE3437561A1/de
Application granted granted Critical
Publication of DE3437561C2 publication Critical patent/DE3437561C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/156CCD or CID colour image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/158Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/84Camera processing pipelines; Components thereof for processing colour signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
DE3437561A 1983-10-13 1984-10-12 Bildaufnahmevorrichtung Granted DE3437561A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58191404A JPS6083485A (ja) 1983-10-13 1983-10-13 撮像装置
JP58197752A JPS6089177A (ja) 1983-10-21 1983-10-21 撮像素子

Publications (2)

Publication Number Publication Date
DE3437561A1 DE3437561A1 (de) 1985-04-25
DE3437561C2 true DE3437561C2 (en, 2012) 1991-05-02

Family

ID=26506676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3437561A Granted DE3437561A1 (de) 1983-10-13 1984-10-12 Bildaufnahmevorrichtung

Country Status (2)

Country Link
US (1) US4910588A (en, 2012)
DE (1) DE3437561A1 (en, 2012)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751254B2 (ja) * 1988-11-10 1998-05-18 ソニー株式会社 固体撮像装置の信号処理回路
JP4337177B2 (ja) * 1999-07-09 2009-09-30 ソニー株式会社 固体撮像素子およびその駆動方法
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP5791982B2 (ja) 2011-07-06 2015-10-07 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
EP2732402A2 (en) 2011-07-13 2014-05-21 Sionyx, Inc. Biometric imaging devices and associated methods
US9349761B2 (en) * 2011-12-07 2016-05-24 Olympus Corporation Solid-state image pickup device and color signal reading method including a plurality of electrically-coupled substrates
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
RU2686053C1 (ru) * 2018-08-09 2019-04-24 Вячеслав Михайлович Смелков Способ формирования видеосигнала "кольцевого" кадра в телевизионной камере для панорамного компьютерного наблюдения в условиях сложной освещённости и/или сложной яркости объектов
RU2683944C1 (ru) * 2018-08-13 2019-04-03 Вячеслав Михайлович Смелков Способ управления чувствительностью телевизионной камеры на матрице ПЗС в условиях сложной освещённости и/или сложной яркости объектов
RU2685219C1 (ru) * 2018-08-27 2019-04-17 Вячеслав Михайлович Смелков Способ управления чувствительностью телевизионной камеры на матрице ПЗС в условиях сложной освещённости и/или сложной яркости объектов

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30800A (en) * 1860-12-04 Striking mechanism for gongs
JPS57702B2 (en, 2012) * 1971-10-15 1982-01-07
JPS51132719A (en) 1975-05-13 1976-11-18 Sony Corp Solid-image pickup device
US4001878A (en) * 1975-11-19 1977-01-04 Rca Corporation Charge transfer color imagers
JPS5839386B2 (ja) * 1978-02-22 1983-08-30 株式会社東芝 電荷転送形イメ−ジセンサ
FR2420889A1 (fr) * 1978-03-24 1979-10-19 Thomson Csf Dispositif pour la lecture d'une cible de prise de vues en rayonnement electromagnetique et ensemble constitue d'une cible de prise de vues et d'un tel dispositif de lecture
DE2939518A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
DE2939403A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
EP0026904A3 (en) * 1979-10-04 1981-12-30 Kabushiki Kaisha Toshiba Solid-state image pick-up device
JPS606147B2 (ja) * 1979-12-07 1985-02-15 株式会社東芝 固体撮像装置
JPS577980A (en) * 1980-06-17 1982-01-16 Matsushita Electronics Corp Solid-state image picking up device
JPS5919493A (ja) * 1982-07-23 1984-01-31 Canon Inc 撮像装置
US4593311A (en) * 1983-11-30 1986-06-03 Rca Corporation Electrical registration of CCD imagers

Also Published As

Publication number Publication date
US4910588A (en) 1990-03-20
DE3437561A1 (de) 1985-04-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition