DE3437561C2 - - Google Patents
Info
- Publication number
- DE3437561C2 DE3437561C2 DE3437561A DE3437561A DE3437561C2 DE 3437561 C2 DE3437561 C2 DE 3437561C2 DE 3437561 A DE3437561 A DE 3437561A DE 3437561 A DE3437561 A DE 3437561A DE 3437561 C2 DE3437561 C2 DE 3437561C2
- Authority
- DE
- Germany
- Prior art keywords
- image recording
- color
- image
- transmission
- horizontal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58191404A JPS6083485A (ja) | 1983-10-13 | 1983-10-13 | 撮像装置 |
JP58197752A JPS6089177A (ja) | 1983-10-21 | 1983-10-21 | 撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3437561A1 DE3437561A1 (de) | 1985-04-25 |
DE3437561C2 true DE3437561C2 (en, 2012) | 1991-05-02 |
Family
ID=26506676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3437561A Granted DE3437561A1 (de) | 1983-10-13 | 1984-10-12 | Bildaufnahmevorrichtung |
Country Status (2)
Country | Link |
---|---|
US (1) | US4910588A (en, 2012) |
DE (1) | DE3437561A1 (en, 2012) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2751254B2 (ja) * | 1988-11-10 | 1998-05-18 | ソニー株式会社 | 固体撮像装置の信号処理回路 |
JP4337177B2 (ja) * | 1999-07-09 | 2009-09-30 | ソニー株式会社 | 固体撮像素子およびその駆動方法 |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP5791982B2 (ja) | 2011-07-06 | 2015-10-07 | オリンパス株式会社 | 固体撮像装置、撮像装置、および信号読み出し方法 |
EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
US9349761B2 (en) * | 2011-12-07 | 2016-05-24 | Olympus Corporation | Solid-state image pickup device and color signal reading method including a plurality of electrically-coupled substrates |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
WO2014127376A2 (en) | 2013-02-15 | 2014-08-21 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
RU2686053C1 (ru) * | 2018-08-09 | 2019-04-24 | Вячеслав Михайлович Смелков | Способ формирования видеосигнала "кольцевого" кадра в телевизионной камере для панорамного компьютерного наблюдения в условиях сложной освещённости и/или сложной яркости объектов |
RU2683944C1 (ru) * | 2018-08-13 | 2019-04-03 | Вячеслав Михайлович Смелков | Способ управления чувствительностью телевизионной камеры на матрице ПЗС в условиях сложной освещённости и/или сложной яркости объектов |
RU2685219C1 (ru) * | 2018-08-27 | 2019-04-17 | Вячеслав Михайлович Смелков | Способ управления чувствительностью телевизионной камеры на матрице ПЗС в условиях сложной освещённости и/или сложной яркости объектов |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US30800A (en) * | 1860-12-04 | Striking mechanism for gongs | ||
JPS57702B2 (en, 2012) * | 1971-10-15 | 1982-01-07 | ||
JPS51132719A (en) | 1975-05-13 | 1976-11-18 | Sony Corp | Solid-image pickup device |
US4001878A (en) * | 1975-11-19 | 1977-01-04 | Rca Corporation | Charge transfer color imagers |
JPS5839386B2 (ja) * | 1978-02-22 | 1983-08-30 | 株式会社東芝 | 電荷転送形イメ−ジセンサ |
FR2420889A1 (fr) * | 1978-03-24 | 1979-10-19 | Thomson Csf | Dispositif pour la lecture d'une cible de prise de vues en rayonnement electromagnetique et ensemble constitue d'une cible de prise de vues et d'un tel dispositif de lecture |
DE2939518A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung zur zeilenweisen bildabtastung |
DE2939403A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung zur zeilenweisen bildabtastung |
EP0026904A3 (en) * | 1979-10-04 | 1981-12-30 | Kabushiki Kaisha Toshiba | Solid-state image pick-up device |
JPS606147B2 (ja) * | 1979-12-07 | 1985-02-15 | 株式会社東芝 | 固体撮像装置 |
JPS577980A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electronics Corp | Solid-state image picking up device |
JPS5919493A (ja) * | 1982-07-23 | 1984-01-31 | Canon Inc | 撮像装置 |
US4593311A (en) * | 1983-11-30 | 1986-06-03 | Rca Corporation | Electrical registration of CCD imagers |
-
1984
- 1984-10-12 DE DE3437561A patent/DE3437561A1/de active Granted
-
1989
- 1989-07-19 US US07/382,026 patent/US4910588A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4910588A (en) | 1990-03-20 |
DE3437561A1 (de) | 1985-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition |