DE3337303C2 - Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche Gemische - Google Patents
Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche GemischeInfo
- Publication number
- DE3337303C2 DE3337303C2 DE19833337303 DE3337303A DE3337303C2 DE 3337303 C2 DE3337303 C2 DE 3337303C2 DE 19833337303 DE19833337303 DE 19833337303 DE 3337303 A DE3337303 A DE 3337303A DE 3337303 C2 DE3337303 C2 DE 3337303C2
- Authority
- DE
- Germany
- Prior art keywords
- udf54
- udf53
- polyorganosiloxane
- polydimethylsiloxane
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 28
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 24
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000007787 solid Substances 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 claims description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 229920000620 organic polymer Polymers 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932682A JPS5968735A (ja) | 1982-10-13 | 1982-10-13 | 感光性組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3337303A1 DE3337303A1 (de) | 1984-04-19 |
| DE3337303C2 true DE3337303C2 (de) | 1987-03-26 |
Family
ID=16063877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833337303 Expired DE3337303C2 (de) | 1982-10-13 | 1983-10-13 | Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche Gemische |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5968735A (fr) |
| DE (1) | DE3337303C2 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3726858A1 (de) * | 1986-08-13 | 1988-02-25 | Sony Corp | Organosiliciumpolymere enthaltendes photoresistmaterial |
| US6210861B1 (en) | 1992-08-29 | 2001-04-03 | Klaus Uwe Schonfelder | Tonable radiation sensitive recording material with balanced adhesive properties and process for using the same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3669211D1 (de) * | 1985-05-31 | 1990-04-05 | Ibm | Schutzlack fuer lithographie und anwendungsverfahren. |
| JPS61289345A (ja) * | 1985-05-31 | 1986-12-19 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | リソグラフイ用レジスト |
| JPS63291053A (ja) * | 1987-05-25 | 1988-11-28 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
| EP0464614B1 (fr) * | 1990-06-25 | 1999-09-29 | Matsushita Electronics Corporation | Composition sensible à la lumière ou aux radiations |
| US5268256A (en) * | 1990-08-02 | 1993-12-07 | Ppg Industries, Inc. | Photoimageable electrodepositable photoresist composition for producing non-tacky films |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5525418B2 (fr) * | 1972-12-20 | 1980-07-05 | ||
| JPS50137202A (fr) * | 1974-04-22 | 1975-10-31 | ||
| JPS516561A (fr) * | 1974-07-04 | 1976-01-20 | Yamamoto Kagaku Gosei Kk | |
| US4200463A (en) * | 1975-12-19 | 1980-04-29 | Motorola, Inc. | Semiconductor device manufacture using photoresist protective coating |
| DE3022473A1 (de) * | 1980-06-14 | 1981-12-24 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung |
-
1982
- 1982-10-13 JP JP17932682A patent/JPS5968735A/ja active Granted
-
1983
- 1983-10-13 DE DE19833337303 patent/DE3337303C2/de not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3726858A1 (de) * | 1986-08-13 | 1988-02-25 | Sony Corp | Organosiliciumpolymere enthaltendes photoresistmaterial |
| US6210861B1 (en) | 1992-08-29 | 2001-04-03 | Klaus Uwe Schonfelder | Tonable radiation sensitive recording material with balanced adhesive properties and process for using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5968735A (ja) | 1984-04-18 |
| DE3337303A1 (de) | 1984-04-19 |
| JPH0544665B2 (fr) | 1993-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69131658T2 (de) | Licht- oder strahlungsempfindliche Zusammensetzung | |
| EP0000702B1 (fr) | Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation | |
| EP0164620B1 (fr) | Solution de revêtement photosensible positive | |
| DE69930832T2 (de) | Benutzung einer zusammensetzung für eine antireflexunterschicht | |
| DE2655455C2 (de) | Verfahren zum Herstellen einer Maske und Lackstruktur zur Verwendung bei dem Verfahren | |
| DE102005002410B4 (de) | Antireflektives Beschichtungspolymer, dessen Präparationsverfahren und obere antireflektierende Beschichtungszusammensetzung mit demselben | |
| DE69320468T2 (de) | Photoresists mit einem niedrigem grad metallionen | |
| EP0082463A2 (fr) | Procédé pour la production d'images en relief | |
| DE2312499A1 (de) | Diazochinon-siloxane und verwendung derselben fuer photolacke und lichtempfindliche gegenstaende | |
| EP0146834A2 (fr) | Révélateur pour photoréserve positive | |
| DE2948324C2 (de) | Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern | |
| DE2728886A1 (de) | Aetzzusammensetzungen und verfahren zu deren verwendung | |
| DE69612656T2 (de) | Verfahren zur entwicklung eines positiv arbeitenden fotoresists und entwicklungszusammensetzungen dafür | |
| DE3201815C2 (fr) | ||
| DE3337303C2 (de) | Verfahren zur photolithographischen Erzeugung von feinen Resistmustern und hierfür verwendbare lichtempfindliche Gemische | |
| DE2743763A1 (de) | Positivlackmaterial und verfahren zur herstellung einer lackmaske | |
| EP0220645B1 (fr) | Composition photosensible positive et matériau formant photoréserve préparé à partir de cette composition | |
| DE4341302A1 (de) | Verfahren zum Herstellen einer Halbleitervorrichtung und einer darin verwendeten Resistverbindung | |
| DE69711433T2 (de) | Verfahren zur verringerung metallionen-verunreinigungen in ein polares lösunsmittel enthaltenden photoresistzusammensetzungen durch ionenaustausch | |
| DE3112196A1 (de) | "photosensitive zusammensetzung zur trockenentwicklung" | |
| EP0188205B1 (fr) | Compositions formant photoréserve à sensibilité augmentée à base d'esters polyamides | |
| EP0143380B1 (fr) | Composition photoréserve | |
| DE69012623T2 (de) | Verfahren zur Herstellung einer feinen Struktur. | |
| DE69704558T2 (de) | Metallionenreduzierung von aminoaromatischen chromophonen und ihre verwendung zur herstellung von antireflexunterschichten mit geringem gehalt an metallionen für photoresiste | |
| DE3685766T2 (de) | Photolackbildherstellungsverfahren. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |