EP0000702B1 - Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation - Google Patents

Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation Download PDF

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Publication number
EP0000702B1
EP0000702B1 EP78100337A EP78100337A EP0000702B1 EP 0000702 B1 EP0000702 B1 EP 0000702B1 EP 78100337 A EP78100337 A EP 78100337A EP 78100337 A EP78100337 A EP 78100337A EP 0000702 B1 EP0000702 B1 EP 0000702B1
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EP
European Patent Office
Prior art keywords
resist
mask
hardening agent
layer
flow
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Expired
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EP78100337A
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German (de)
English (en)
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EP0000702A1 (fr
Inventor
George Tein-Chu Chiu
Edward Carmine Fredericks
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the invention relates to a method for producing a flow-resistant mask from radiation-sensitive resist material.
  • resist masks in the manufacture of integrated circuits using radiation-sensitive layers containing various organic polymers is known.
  • Layers of a radiation sensitive material are applied to a support, exposed to light or other activating radiation such as electron beams or X-rays in an imagewise pattern and developed into a visible image by removing the more soluble portions of the layer in a developer solution.
  • the resist pattern is cured in a conventional manner at an elevated temperature.
  • the thermoplastic polymer materials in the resist flow at temperatures above their glass transition temperature.
  • the object of the invention is a method for producing a flow-resistant mask from radiation-sensitive resist material by curing, in which no special device is required for the curing process and in which the resist composition does not have to be modified before exposure.
  • the object of the invention is achieved by a method of the type mentioned at the outset, which is characterized in that a curing agent of the o-quinonediazide type is applied to the mask, the coated mask is heated and then the excess curing agent is removed.
  • the curing agents for use in the process according to the invention are water-soluble salts of o-quinonediazide sulfonic and carboxylic acids.
  • Compounds of this type include o-quinonediazides from the benzene, naphthalene and phenanthrene series. Examples of the compounds have the formulas given below: in which R S0 3 X or COOX and X is for example Na +, K + , Ca 2+ , Ba2 +, Li + or NH 4 + .
  • the coating solutions of the hardeners are obtained in such concentrations represents that about 0.5 to 10 wt .-% of the curing agent, based on the total weight of the solution is present. Concentrations below 0.5% by weight may cause insufficient hardening to prevent the resist from flowing when heated. Also, no particular advantages are obtained using amounts greater than 10% by weight, and the presence of such amounts can cause crater or bubble formation in the resist mask pattern caused by gas evolution during heating.
  • the concentrations should be kept in a range of about 0.5 to 1.5% by weight in order to avoid crater formation in these continuous areas.
  • the solvent system or the hardening agent is water-based, so that attack of the resist layer by the coating solution is avoided. It has been found that the resist layer is better wetted by the coating solution and, consequently, a more uniform coating of the curing agent is obtained when a mixture of water with alcohols with 2 to 4 carbon atoms, for example with ethanol, propanol or butanol, is used.
  • the proportions of water and alcohol are chosen in such a way that sufficient solubility of the hardening agent is obtained and at the same time an attack by the solvent on the resist system is avoided.
  • surfactants can be added in amounts of about 0.01 to 1% by weight to improve wetting. Examples of useful surfactants are sodium lauryl sulfate, fluorocarbon based surfactants, sodium palmitate and polymethacrylic acid solutions.
  • the curing agent is applied to the resist mask by conventional methods, for example by dipping, spraying or spinning, to obtain a continuous layer over the resist mask and the base.
  • a layer ceiling of approximately 40 nm is required as a minimum in order to obtain a continuous coating on the surface and the side walls of the resist image.
  • a layer thickness of approximately 50 to 100 nm is preferred.
  • the desired layer thickness can be obtained in the spinning technique by varying the spinning speed. The spinning time is chosen so that a large part of the solvent is removed by evaporation.
  • the resist compositions which can be cured by the process according to the invention can be either positive or negative resist materials.
  • Negative resist materials are those that, when irradiated, crosslink and become less soluble.
  • Examples of negative resist materials are sensitized polyvinyl cinnamate polymer compositions described, for example, in U.S. Patent 2,732,301 and sensitized, partially cyclized poly-cis-isoprene polymer compositions described, for example, in U.S. Patent 2,852,379.
  • Examples of positive resist materials which degrade under the action of radiation and thereby become more soluble are sensitized novolak resin compositions which are described, for example, in US Pat. Nos. 3,046,118, 3,046,121, 3,201,239 and 3,666,743.
  • the resist layers are applied to a base and exposed imagewise.
  • the more soluble areas of the layer which are the exposed areas in the case of a positive resist and the unexposed areas in the case of a negative resist, are then removed with a developer solution.
  • the resulting resist mask pattern can then be treated in the process according to the invention by covering it with a layer of an o-quinonediazide curing agent. After coating, the resist mask is heated to a temperature which is sufficient to bring about a reaction of the o-quinonediazide with the resist layer to form a crosslinked outer layer, in particular on the side walls of the resist image, so that the lateral flow of the image is prevented. when the image is heated to temperatures above the glass transition temperatures of the polymer portion of the resist layer.
  • the residue of the curing agent which remains on the base at the edges of the resist mask can be easily removed by rinsing with water.
  • the resulting resist mask shows hardly any lateral flow of the images.
  • the hardened resist image retains its dimensions during subsequent treatments of the exposed areas of the substrate, for example when etching with hot acids or with a reactive gas plasma, during ion implantation or a metal vapor deposition process in which the resist layer is heated to higher temperatures.
  • a mask pattern of a positive photoresist was formed on the surface of a cleaned, metal-coated silicon semiconductor wafer: the resist composition consisted of a phenol formaldehyde novolak resin and the 2-diazo-1-oxo-naphthalene-5-sulfonic acid ester of dihydroxybenzophenone.
  • the Resist was applied to the metal surface by spinning at 4000 revolutions per minute, cured to a dry layer thickness of approximately 2.2 ⁇ m for 20 minutes at approximately 85 ° C. and then imagewise exposed to actinic radiation and developed with an aqueous alkaline developer solution to expose the Remove areas.
  • a 1% by weight solution of the sodium salt of 2-diazo-1-oxide-naphthalene-5-sulfonic acid in a mixture of water and isopropanol in a volume ratio was applied to the resist mask and the wafer by spinning at 3000 revolutions per minute within one minute 50:50 applied.
  • the coating thickness was about 50 nm.
  • the coated wafer was then cured in an oven under nitrogen for 20 minutes at a temperature of 210 ° C ⁇ 5 ° C, and then the residue of the curing agent was removed by flushing with deionized water for 5 minutes .
  • the curing agent prevented the resist images from flowing sideways, and the dimensional changes of the images were small ( ⁇ 0.508 11m).
  • the exposed areas of the metal layer were then etched by placing the wafer in a reactive gas plasma.
  • the removal of the resist mask was uniform and the resist had a smooth surface after the metal etching process.
  • This method enables the use of a thinner resist mask without attacking the parts of the metal layer lying under the mask during the plasma etching process.
  • resist layers on comparison wafers which were only post-cured in the usual way or contained a peroxide additive in the composition, showed a rough surface with holes after the plasma etching.
  • a mask pattern of a positive photoresist with a thickness of about 1.5 11 m was formed on a silicon wafer, the surface of which was coated with a thermal oxide, as indicated in Example 1.
  • the resist mask was coated using a solution of the sodium salt of 1-diazo-2-oxide-naphthalene-4-sulfonic acid in deionized water. Approximately 4 to 6 ml of the solution, which was filtered through a 0.5 J.Lm filter, was spun onto the resist images at a spinning speed of 3500 revolutions per minute within 1 minute. The wafer was then cured in an oven under a nitrogen atmosphere for 20 minutes at a temperature of 210 ° C ⁇ 5 ° C.
  • Photomicrographs of the resist image showed that flowing of the resist image was essentially avoided.
  • resist images on control wafers which had not been subjected to the curing process according to the invention, showed a strong flow after curing at 210 ° C.
  • Resist images which had been treated with peroxides such as Lupersol 101 (2,5-dimethyl-2,5-di (tert-butyl-peroxy) hexane or polymethacrylic acid solutions in deionized water and post-cured for 20 minutes at 210 ° C) also showed strong tiling and were deformed.
  • silicon semiconductor wafers the surface of which was covered with a thermal oxide, were coated with a resist layer by spinning at 6000 revolutions per minute, which consisted of a partially cyclized poly-cis-isoprene polymer and 2. 6-bis (p-azido-benzylidene) -4-methylcyclohexane existed as a sensitizer.
  • the layer was precured at 90 ° C for 20 minutes and then imagewise exposed to ultraviolet light for 1 minute.
  • the exposed wafers were developed in a solvent at room temperature for 4 minutes to remove the unexposed areas and blown dry with nitrogen.
  • the wafer was then split in half and one half was washed with an aqueous solution containing 4.3% by weight of the sodium salt of 2-diazo-1-oxide-naphthalene-5-sulfonic acid and 0.1% by weight. -% polymethacrylic acid coated.
  • the other half was used for the control measurement.
  • Both halves of the wafer were cured in a nitrogen atmosphere in an oven at 180 ° C for 30 minutes.
  • the treated resist image showed a significantly improved dimensional stability of the image after curing.
  • the resist image on the untreated half was severely melted. Similar results were obtained with another wafer, one half of which was treated and the other half of which was not treated, and both halves had been cured under nitrogen at 210 ° C for 30 minutes.

Claims (7)

1. Procédé pour fabriquer un masque composé d'un matériau photo-résistant sensible à l'irradiation sur un support qui ne coule pas, caractérisé en ce que l'on dépose sur le masque un agent de durcissement du genre diazide d'ortho-quinone, et que l'on chauffe le masque ainsi recouvert, et que l'on enlève ensuite l'agent de durcissement en excés.
2. Procédé selon la revendication 1, caractérisé en ce que les agents de durcissement sont des sels, solubles dans l'eau, de diazides d'ortho-quinone de l'acide sulfonique ou de l'acide carbonique.
3. Procédé selon les revendications 1 et 2, caractérisé en ce que l'on applique comme agents de durcissement des composés du genre diazide d'ortho-quinone ayant les formules générales:
Figure imgb0007
Figure imgb0008
R étant du S03X ou du COOX, et X étant pris dans le groupe comprenant Na+, K+, Ca2+, Ba2+, Li+ ou NH4 +.
4. Procédé selon l'une quelconque des revendications 1 à 3, caractérisé en ce que l'agent de durcissement est déposée sur le masque sous la forme d'une solution aqueuse ou aqueuse alcoolique dont il représente de 0,5 à 10% en poids.
5. Procédé selon l'une quelconque ou plusieurs des revendications 1 à 4, caractérisé en ce que l'épaisseur de la couche de l'agent de durcissement déposée sur le masque est comprise entre 50 et 100 nm.
6. Procédé selon l'une quelconque ou plusieurs des revendications 1 à 5, caractérisé en ce que le masque est chauffé à une température allant de 110 à 210°C.
7. Procédé selon l'une quelconque ou plusieurs des revendications 1 à 6, caractérisé en ce que l'agent de durcissement est déposé sur un masque constitué par un matériau photorésistant de type positif ou négatif sensible aux irradiation.
EP78100337A 1977-08-08 1978-07-10 Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation Expired EP0000702B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US822468 1977-08-08
US05/822,468 US4125650A (en) 1977-08-08 1977-08-08 Resist image hardening process

Publications (2)

Publication Number Publication Date
EP0000702A1 EP0000702A1 (fr) 1979-02-21
EP0000702B1 true EP0000702B1 (fr) 1981-10-07

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Family Applications (1)

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EP78100337A Expired EP0000702B1 (fr) 1977-08-08 1978-07-10 Procédé de préparation d'un masque de photorésist résistant à l'écoulement en matériau sensible à une radiation

Country Status (4)

Country Link
US (1) US4125650A (fr)
EP (1) EP0000702B1 (fr)
JP (1) JPS5429574A (fr)
DE (1) DE2861132D1 (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
US4259369A (en) * 1979-12-13 1981-03-31 International Business Machines Corporation Image hardening process
DE3022362A1 (de) * 1980-06-14 1981-12-24 Hoechst Ag, 6000 Frankfurt Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung
US4343876A (en) * 1980-11-21 1982-08-10 E. I. Du Pont De Nemours And Company Dot-enlargement process for photopolymer litho masks
JPS5844715A (ja) * 1981-09-11 1983-03-15 Fujitsu Ltd 微細パタ−ン形成方法
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
GB2121197A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
DE3325022A1 (de) * 1983-07-11 1985-01-24 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden
US4568631A (en) * 1984-04-30 1986-02-04 International Business Machines Corporation Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone
KR930010248B1 (ko) * 1984-09-14 1993-10-15 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
US4596763A (en) * 1984-10-01 1986-06-24 American Hoechst Corporation Positive photoresist processing with mid U-V range exposure
GB2170015A (en) * 1985-01-11 1986-07-23 Philips Electronic Associated Method of manufacturing a semiconductor device
US4981909A (en) * 1985-03-19 1991-01-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (fr) * 1985-03-19 1991-04-02 International Business Machines Corporation Methode de production de films multicouche pour la fabrication des circuits et systemes a semiconducteur
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4672021A (en) * 1985-06-03 1987-06-09 Fairmount Chemical Company Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder
US4777111A (en) * 1985-06-03 1988-10-11 Fairmount Chemical Company, Inc. Photographic element with diazo contrast enhancement layer and method of producing image in underlying photoresist layer of element
US4762768A (en) * 1986-01-29 1988-08-09 Macdermid, Incorporated Thermally stabilized photoresist images
AU6629286A (en) * 1985-11-27 1987-07-01 Macdermid, Inc. Thermally stabilized photoresist images
US4701390A (en) * 1985-11-27 1987-10-20 Macdermid, Incorporated Thermally stabilized photoresist images
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4806455A (en) * 1987-04-03 1989-02-21 Macdermid, Incorporated Thermal stabilization of photoresist images
DE3800176A1 (de) * 1988-01-07 1989-07-20 Bosch Gmbh Robert Steuereinrichtung fuer eine brennkraftmaschine und verfahren zum einstellen von parametern der einrichtung
US6503693B1 (en) * 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
DE10101734C2 (de) * 2001-01-16 2003-04-24 Osram Opto Semiconductors Gmbh Verfahren zum Ausbilden einer Ätzmaske auf einem Substrat
US6605413B1 (en) * 2001-03-29 2003-08-12 Advanced Micro Devices, Inc. Chemical treatment to strengthen photoresists to prevent pattern collapse
US7314691B2 (en) * 2004-04-08 2008-01-01 Samsung Electronics Co., Ltd. Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device
US9659824B2 (en) 2015-04-28 2017-05-23 International Business Machines Corporation Graphoepitaxy directed self-assembly process for semiconductor fin formation
US9563122B2 (en) 2015-04-28 2017-02-07 International Business Machines Corporation Method to harden photoresist for directed self-assembly processes
US10781504B2 (en) * 2016-08-08 2020-09-22 Mt2, Llc Method for the treatment of metallic particles and objects contaminated with metallic particles

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278305A (en) * 1963-07-12 1966-10-11 Gevaert Photo Prod Nv Photochemical cross-linking of polymers
GB1136544A (en) * 1966-02-28 1968-12-11 Agfa Gevaert Nv Photochemical cross-linking of polymers
US3459708A (en) * 1967-01-18 1969-08-05 Chevron Res Phenol-aldehyde wood bonding adhesives incorporating organic hydroperoxides and having improved curing rates
US3660097A (en) * 1969-11-28 1972-05-02 Polychrome Corp Diazo-polyurethane light-sensitive compositions
US3711287A (en) * 1971-05-19 1973-01-16 Eastman Kodak Co Photoresist compositions
SU451978A1 (ru) * 1973-02-19 1974-11-30 Предприятие П/Я А-7850 Позитивный фоторезист
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask
JPS53115301A (en) * 1977-03-17 1978-10-07 Toppan Printing Co Ltd Method of treating hard film of water soluble photoresist pattern

Also Published As

Publication number Publication date
DE2861132D1 (en) 1981-12-17
JPS5429574A (en) 1979-03-05
JPS5649452B2 (fr) 1981-11-21
EP0000702A1 (fr) 1979-02-21
US4125650A (en) 1978-11-14

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