DE3329302A1 - Thyristor mit abgeglichener triggerfuehrung - Google Patents

Thyristor mit abgeglichener triggerfuehrung

Info

Publication number
DE3329302A1
DE3329302A1 DE19833329302 DE3329302A DE3329302A1 DE 3329302 A1 DE3329302 A1 DE 3329302A1 DE 19833329302 DE19833329302 DE 19833329302 DE 3329302 A DE3329302 A DE 3329302A DE 3329302 A1 DE3329302 A1 DE 3329302A1
Authority
DE
Germany
Prior art keywords
trigger
electrode
thyristor
metallic
insulation tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833329302
Other languages
German (de)
English (en)
Other versions
DE3329302C2 (cg-RX-API-DMAC10.html
Inventor
Kazuhiko Itami Hyogo Niwayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3329302A1 publication Critical patent/DE3329302A1/de
Application granted granted Critical
Publication of DE3329302C2 publication Critical patent/DE3329302C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H10W76/138—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Die Bonding (AREA)
DE19833329302 1982-08-12 1983-08-12 Thyristor mit abgeglichener triggerfuehrung Granted DE3329302A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141456A JPS5931062A (ja) 1982-08-12 1982-08-12 サイリスタ

Publications (2)

Publication Number Publication Date
DE3329302A1 true DE3329302A1 (de) 1984-02-23
DE3329302C2 DE3329302C2 (cg-RX-API-DMAC10.html) 1989-01-26

Family

ID=15292320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833329302 Granted DE3329302A1 (de) 1982-08-12 1983-08-12 Thyristor mit abgeglichener triggerfuehrung

Country Status (3)

Country Link
US (1) US4797727A (cg-RX-API-DMAC10.html)
JP (1) JPS5931062A (cg-RX-API-DMAC10.html)
DE (1) DE3329302A1 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180178A (en) * 1989-12-28 1993-01-19 Roberto Caceres Recreational cart
DE19627426A1 (de) * 1996-07-08 1998-01-15 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter sowie Verfahren zum Zusammenbauen eines solchen lichtzündbaren Leistungshalbleiters
DE102017211016B3 (de) * 2017-06-29 2018-10-11 Bruker Biospin Ag NMR-Probenkopf mit mehrteiligem Insert-Unterteil

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2115954A1 (de) * 1971-04-01 1972-10-12 Gen Electric Halbleiterschalter
DE2719400A1 (de) * 1977-04-30 1978-11-09 Licentia Gmbh Scheibenfoermige halbleiterzelle
DE2808531A1 (de) * 1977-05-26 1978-11-30 Electric Power Res Inst Lichtgetriggertes hochleistungs-halbleiterbauelement
GB1579619A (en) * 1977-05-26 1980-11-19 Electric Power Res Inst Package for light-triggered thryistor
EP0021352A1 (en) * 1979-06-19 1981-01-07 Kabushiki Kaisha Toshiba Light-driven semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788770A (en) * 1980-11-21 1982-06-02 Hitachi Ltd Photo semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2115954A1 (de) * 1971-04-01 1972-10-12 Gen Electric Halbleiterschalter
DE2719400A1 (de) * 1977-04-30 1978-11-09 Licentia Gmbh Scheibenfoermige halbleiterzelle
DE2808531A1 (de) * 1977-05-26 1978-11-30 Electric Power Res Inst Lichtgetriggertes hochleistungs-halbleiterbauelement
GB1579619A (en) * 1977-05-26 1980-11-19 Electric Power Res Inst Package for light-triggered thryistor
EP0021352A1 (en) * 1979-06-19 1981-01-07 Kabushiki Kaisha Toshiba Light-driven semiconductor device

Also Published As

Publication number Publication date
JPS5931062A (ja) 1984-02-18
DE3329302C2 (cg-RX-API-DMAC10.html) 1989-01-26
US4797727A (en) 1989-01-10

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Legal Events

Date Code Title Description
OR8 Request for search as to paragraph 43 lit. 1 sentence 1 patent law
8105 Search report available
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee