JPS5931062A - サイリスタ - Google Patents
サイリスタInfo
- Publication number
- JPS5931062A JPS5931062A JP57141456A JP14145682A JPS5931062A JP S5931062 A JPS5931062 A JP S5931062A JP 57141456 A JP57141456 A JP 57141456A JP 14145682 A JP14145682 A JP 14145682A JP S5931062 A JPS5931062 A JP S5931062A
- Authority
- JP
- Japan
- Prior art keywords
- trigger
- insulating cylinder
- thyristor
- main surface
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H10W76/138—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
- Die Bonding (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141456A JPS5931062A (ja) | 1982-08-12 | 1982-08-12 | サイリスタ |
| US06/521,510 US4797727A (en) | 1982-08-12 | 1983-08-08 | Thyristor with aligned trigger guide |
| DE19833329302 DE3329302A1 (de) | 1982-08-12 | 1983-08-12 | Thyristor mit abgeglichener triggerfuehrung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141456A JPS5931062A (ja) | 1982-08-12 | 1982-08-12 | サイリスタ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5931062A true JPS5931062A (ja) | 1984-02-18 |
Family
ID=15292320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57141456A Pending JPS5931062A (ja) | 1982-08-12 | 1982-08-12 | サイリスタ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4797727A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5931062A (cg-RX-API-DMAC10.html) |
| DE (1) | DE3329302A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180178A (en) * | 1989-12-28 | 1993-01-19 | Roberto Caceres | Recreational cart |
| DE19627426A1 (de) * | 1996-07-08 | 1998-01-15 | Asea Brown Boveri | Lichtzündbarer Leistungshalbleiter sowie Verfahren zum Zusammenbauen eines solchen lichtzündbaren Leistungshalbleiters |
| DE102017211016B3 (de) * | 2017-06-29 | 2018-10-11 | Bruker Biospin Ag | NMR-Probenkopf mit mehrteiligem Insert-Unterteil |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2115954C2 (de) * | 1971-04-01 | 1985-01-24 | General Electric Co., Schenectady, N.Y. | Thyristortriode |
| DE2719400C2 (de) * | 1977-04-30 | 1982-09-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Scheibenförmige Halbleiterzelle |
| US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
| US4207587A (en) * | 1977-05-26 | 1980-06-10 | Electric Power Research Institute, Inc. | Package for light-triggered thyristor |
| US4368481A (en) * | 1979-06-19 | 1983-01-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Light-driven semiconductor device |
| JPS5788770A (en) * | 1980-11-21 | 1982-06-02 | Hitachi Ltd | Photo semiconductor device |
-
1982
- 1982-08-12 JP JP57141456A patent/JPS5931062A/ja active Pending
-
1983
- 1983-08-08 US US06/521,510 patent/US4797727A/en not_active Expired - Fee Related
- 1983-08-12 DE DE19833329302 patent/DE3329302A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3329302C2 (cg-RX-API-DMAC10.html) | 1989-01-26 |
| US4797727A (en) | 1989-01-10 |
| DE3329302A1 (de) | 1984-02-23 |
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